公开(公告)号：DE3668391D1

公开(公告)日：1990-02-22

申请号：DE3668391

申请日：1986-09-19

Applicant: IBM

Inventor： MEYERSON BERNARD STEELE ,  JOSHI RAJIV VASANT ,  ROSENBERG ROBERT ,  PATEL VISHNUBHAI VITHALBHAI

IPC: G11B5/66 ,  G11B5/64 ,  G11B5/72

Abstract: A superior wear-resistant coating is provided for metallic magnetic recording layers (14), where the improved coating is a hard carbon layer (18) that is strongly bound to the underlying metallic magnetic recording layer by an intermediate layer of silicon (16). The silicon layer can be very thin, with a minimum thickness of a few atomic layers, and provides a strong adhesion between the hard carbon protective layer and the metallic magnetic recording layer (14). A preferred technique for depositing both the intermediate silicon (16) layer and the hard carbon layer (18) is plasma deposi­tion, since both of these depositions can be performed in the same reactor without breaking vacuum.

公开(公告)号：DE69529775T2

公开(公告)日：2003-10-16

申请号：DE69529775

申请日：1995-07-05

Applicant: IBM

Inventor： JOSHI RAJIV VASANT ,  TEJWANI MANU JAMNADAS ,  SRIKRISHNAN KRIS VENKATRAMAN

IPC: H01L21/28 ,  H01L21/203 ,  H01L21/205 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532

Abstract: A structure and method for fabricating circuits which use field effect transistors (FETs), bipolar transistors, or BiCMOS (combined Bipolar/Complementary Metal Oxide Silicon structures), uses low temperature germanium gas flow to affect metals and alloys deposited in high aspect ratio structures including lines and vias. By using a germanium gas flow, germanium (Ge) will be introduced in a surface reaction which prevents voids and side seams and which also provides a passivating layer of CuGe. If a hard cap is needed for surface passivation or a wear-resistance application, the GeH4 gas followed by WF6 can be used to produce an in-situ hard cap of WxGey. Further, high aspect ratio vias/lines (aspect ratio of 3 or more) can be filled by utilizing low pressures and high temperatures (i.e., below 450 DEG C) without degrading the underlying metals.

公开(公告)号：DE69513459T2

公开(公告)日：2000-10-26

申请号：DE69513459

申请日：1995-07-05

Applicant: IBM

Inventor： JOSHI RAJIV VASANT ,  TEJWANI MANU JAMNADAS ,  SRIKRISHNAN KRIS VENKATRAMAN

IPC: H01L21/28 ,  H01L21/203 ,  H01L21/205 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532

Abstract: A structure and method for fabricating circuits which use field effect transistors (FETs), bipolar transistors, or BiCMOS (combined Bipolar/Complementary Metal Oxide Silicon structures), uses low temperature germanium gas flow to affect metals and alloys deposited in high aspect ratio structures including lines and vias. By using a germanium gas flow, germanium (Ge) will be introduced in a surface reaction which prevents voids and side seams and which also provides a passivating layer of CuGe. If a hard cap is needed for surface passivation or a wear-resistance application, the GeH4 gas followed by WF6 can be used to produce an in-situ hard cap of WxGey. Further, high aspect ratio vias/lines (aspect ratio of 3 or more) can be filled by utilizing low pressures and high temperatures (i.e., below 450 DEG C) without degrading the underlying metals.

公开(公告)号：DE69513459D1

公开(公告)日：1999-12-30

申请号：DE69513459

申请日：1995-07-05

Applicant: IBM

Inventor： JOSHI RAJIV VASANT ,  TEJWANI MANU JAMNADAS ,  SRIKRISHNAN KRIS VENKATRAMAN

IPC: H01L21/28 ,  H01L21/203 ,  H01L21/205 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532

Abstract: A structure and method for fabricating circuits which use field effect transistors (FETs), bipolar transistors, or BiCMOS (combined Bipolar/Complementary Metal Oxide Silicon structures), uses low temperature germanium gas flow to affect metals and alloys deposited in high aspect ratio structures including lines and vias. By using a germanium gas flow, germanium (Ge) will be introduced in a surface reaction which prevents voids and side seams and which also provides a passivating layer of CuGe. If a hard cap is needed for surface passivation or a wear-resistance application, the GeH4 gas followed by WF6 can be used to produce an in-situ hard cap of WxGey. Further, high aspect ratio vias/lines (aspect ratio of 3 or more) can be filled by utilizing low pressures and high temperatures (i.e., below 450 DEG C) without degrading the underlying metals.

公开(公告)号：DE3781312T2

公开(公告)日：1993-04-08

申请号：DE3781312

申请日：1987-04-03

Applicant: IBM

Inventor： JOSHI RAJIV VASANT

IPC: H01L21/3205 ,  H01L23/52 ,  H01L21/31

Abstract: A method for fabricating a structure, which includes a layer (2) containing a refractory metal and a substrate (3) to which the refractory metal-containing layer does not strongly adhere, there being a thin bonding layer (5) between the substrate (3) and the refractory metal-containing layer (2) for providing good adherence between the refractory metal-containing layer and the substrate. The bonding layer (5) is an oxide, nitride or mixed osy-nitride layer initially prepared to be Si-rich in a surface region thereof. Inclusions (7) of the refractory metal are produced in the bonding layer (5) by substituting the refractory metal for excess free silicon (6) therein. These inclusions become nucleation and bonding sites for refractory metal deposition, ensuring good adhesion.