公开(公告)号：GB2485495B

公开(公告)日：2013-10-30

申请号：GB201200880

申请日：2010-08-30

Applicant: IBM

Inventor： BJOERK MIKAEL T ,  KARG SIEGFRIED FRIEDRICH ,  KNOCH JOACHIM ,  RIEL HEIKE E ,  RIESS WALTER H ,  SOLOMON PAUL M

IPC: H01L29/739 ,  H01L29/06

Abstract: An indirectly induced tunnel emitter for a tunneling field effect transistor (TFET) structure includes an outer sheath that at least partially surrounds an elongated core element, the elongated core element formed from a first semiconductor material; an insulator layer disposed between the outer sheath and the core element; the outer sheath disposed at a location corresponding to a source region of the TFET structure; and a source contact that shorts the outer sheath to the core element; wherein the outer sheath is configured to introduce a carrier concentration in the source region of the core element sufficient for tunneling into a channel region of the TFET structure during an on state.