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公开(公告)号：CA1153674A
公开(公告)日：1983-09-13
申请号：CA399150
申请日：1982-03-23
Applicant: IBM
Inventor： CHUANG TUNG J , COBURN JOHN W , KAY ERIC
IPC: H01L21/302 , C23F1/12 , H01L21/3065 , H01L21/3213 , H01L21/306
Abstract: SA9 80 049 ETCHING PROCESS WITH VIBRATIONALLY EXCITED SF6 of the Invention A substrate which forms a volatile fluoride is etched and directionality is achieved using vibrationally excited SF6 which has been exposed to laser irradiation. The substrate is etched through a mask having openings smaller than the diffraction limit of the laser light.
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公开(公告)号：DE2860917D1
公开(公告)日：1981-11-05
申请号：DE2860917
申请日：1978-12-01
Applicant: IBM
Inventor： COBURN JOHN WYLLIE , KAY ERIC
Abstract: A method of forming a polymer film containing metal therein includes the steps of providing an electrode of a metal that can be etched by a halogen, providing a substrate for the polymer film to be deposited thereon, and passing a halocarbon monomer through a plasma system so that the metal etched from the electrode forms a volatile halide and is incorporated in the polymer film that is deposited on the substrate.
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公开(公告)号：DE1765644A1
公开(公告)日：1971-08-12
申请号：DE1765644
申请日：1968-06-25
Applicant: IBM
Inventor： KAY ERIC , SAWATZKY ERICH
Abstract: 1,156,768. Sputtered films of rare earth iron garnets. INTERNATIONAL BUSINESS MACHINES CORP. May 28, 1968 [June 26, 1967], No. 25422/68. Heading C7F. A film of a rare earth iron garnet is produced by sputtering a garnet source on to a substrate maintained below 50 C in an atmosphere having a partial pressure of oxygen of at least 10%, and then crystallizing the deposited film. The rare earth iron garnets have the formula M 3 Fe 3 O 12 where M is one of the rare earths and to ensure that the deposited garnet has the same formula the source cathode must be kept at a temperature below the vaporization temperature of the garnet. The substrate should have a thermal expansion coefficient between 80 x 10 -7 / C to 130 x 10 -7 / C and suitable substrates are single crystal quartz, magnesium oxide or the same garnet as that being deposited. The sputtered film is crystallized by heating to 700 -1100 C in an oxygen atmosphere or in a vacuum. The sputtering is carried out with a 50 watt R. F. oscillator and RF power amplifier at a frequency of 13À56 megacycles/sec. A magnetic field perpendicular to the target is superposed by a set of Helmboltz coils outside the vacuum chamber.
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Patent Agency Ranking
公开(公告)号：DE3262190D1
公开(公告)日：1985-03-21
申请号：DE3262190
申请日：1982-03-23
Applicant: IBM
Inventor： CHUANG TUNG JUNG , COBURN JOHN WYLLIE , KAY ERIC
IPC: H01L21/302 , C23F1/12 , H01L21/3065 , H01L21/3213 , H01L21/306 , C23F1/00
Abstract: A substrate which forms a volatile fluoride is etched and directionality is achieved using vibrationally excited SF6 which has been exposed to laser irradiation. The substrate is etched through a mask having openings smaller than the diffraction limit of the laser light.
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