公开(公告)号：JP2001196589A

公开(公告)日：2001-07-19

申请号：JP2000000022

申请日：2000-01-04

Applicant: IBM

Inventor： TSUJIMURA TAKATOSHI ,  MIYAMOTO TAKASHI

IPC: H01L21/336 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a TFT structure through a two-mask process. SOLUTION: A light blocking layer and an interlayer insulating layer are successively laminated on a substrate, a source electrode and a drain electrode are formed thereon (first mask process), a semiconductor layer, a gate insulating layer, and a gate metal layer are laminated successively covering the electrodes, a gate electrode is formed in a second mask process, then the gate insulating layer and the semiconductor layer are etched, and the interlayer insulating film and the light blocking layer are etched using the source and drain electrode as a mask, to obtain a top gate TFT structure. At this point, when each of the interlayer insulating layer and the gate insulating layer is formed of insulating materials, whose main components are SiOX and SiNX respectively and a plasma etching operation is carried out by the use of a mixed gas of CF4 and hydrogen, the gate insulating layer and the semiconductor layer are overetched naturally as against the interlayer insulating layer and the light block layer, so that a TFT structure of high reliability and free of troubles, such as an optical leakage current, can be obtained.

公开(公告)号：JP2001077366A

公开(公告)日：2001-03-23

申请号：JP23392099

申请日：1999-08-20

Applicant: IBM

Inventor： TSUJIMURA TAKATOSHI ,  TOKUHIRO OSAMU ,  MIYAMOTO TAKASHI ,  MOROOKA MITSUO

IPC: H01L21/205 ,  G02F1/136 ,  G02F1/1368 ,  H01L21/336 ,  H01L29/786 ,  G02F1/1365

Abstract: PROBLEM TO BE SOLVED: To improve productivity in the deposition of the a-Si film of a thin film transistor and also enhance the thin film transistor in characteristics. SOLUTION: An amorphous silicon film 2, a gate insulating film 3, a gate insulating film 3, and a gate electrode 4 are sequentially laminated on an insulating substrate 1 for the formation of a thin film transistor. In this case, the amorphous silicon film 2 is composed of a low-defect density amorphous silicon layer 5 that is formed at a low deposition rate and a high-speed amorphous silicon layer 6 formed at a higher deposition rate than the silicon layer 5, where the amorphous silicon layer 5 is located closer to the insulating board 1 than the amorphous silicon layer 6, and the amorphous silicon layer 6 is formed coming into contact with the under surface of the gate insulating film 3.

公开(公告)号：JP2001338880A

公开(公告)日：2001-12-07

申请号：JP2000156007

申请日：2000-05-26

Applicant: IBM

Inventor： TSUJIMURA TAKATOSHI ,  TOKUHIRO OSAMU ,  MOROOKA MITSUO ,  MIYAMOTO TAKASHI

IPC: G02F1/136 ,  C23C16/44 ,  G02F1/1368 ,  G09F9/00 ,  H01L21/00 ,  H01L21/205 ,  H01L21/336 ,  H01L27/12 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method and device that can improve productivity, and can reduce costs for manufacturing an active matrix device including a top-gate-type TFT without poorly affecting the characteristics of the TFT. SOLUTION: This method includes a process that forms oxide coating 15 on the internal wall of a treatment chamber 9 for CVD in the manufacture of the top-gate-type TFT, a process that arranges a substrate 1 where source and drain electrodes 5 and 4 are formed in the treatment chamber 9, a process that carries out P doping to the source and drain electrodes 5 and 4, and a process that forms an a-Si layer 6 and a gate insulating film 7 in the treatment chamber. Also, this device manufactures the active matrix device including the top-gage-type TFT where the inner surface of the treatment chamber 9 is coated with the oxide coating 15.

公开(公告)号：JP2000332248A

公开(公告)日：2000-11-30

申请号：JP13389299

申请日：1999-05-14

Applicant: IBM

Inventor： TSUJIMURA TAKATOSHI ,  MIYAMOTO TAKASHI

IPC: H01L29/786 ,  H01L21/336 ,  H01L27/12 ,  H01L29/417 ,  H01L29/45

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a thin-film transistor that enables a satisfactory ohmic contact between a source electrode, a drain electrode, and a semiconductor layer. SOLUTION: A first semiconductor layer (n+ a-Si) 6 containing an impurity P is formed on a source electrode 4 and a drain electrode 5, which substantially do not contain oxygen and are made of an MOW alloy. The impurity P contained in the first semiconductor layer is diffused onto an SiO2 substrate 1, the source electrode 4 and the drain electrode 5, subjected to H2 plasma etching, and the first semiconductor layer 6 and regions 8 containing an impurity of the substrate are selectively etched. A second semiconductor a-Si layer 9 is formed on the source electrode 4 and the drain electrode 5, the impurity P contained in the source electrode 4 and the drain electrode 5 is made to diffuse onto the second semiconductor layer, to form ohmic contact layer 11.

公开(公告)号：JP2009053740A

公开(公告)日：2009-03-12

申请号：JP2007217106

申请日：2007-08-23

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： MIYAMOTO TAKASHI ,  OKAMOTO KOSUKE

IPC: G06F11/34 ,  G06F21/20 ,  G06F21/24

CPC classification number: G06F17/3089

Abstract: PROBLEM TO BE SOLVED: To provide a system capable of recording an operation log which is useful, visual, and intelligible for an audit or the like. SOLUTION: The system is provided with: a response reception section for receiving a response which a server has transmitted to a client, the response including content for directing data input to the client; a response transmission section for transmitting, to the client, a response including an identifier for identifying content corresponding to the request; a logging database in which the content and the identifier are associated and recorded; a request reception section for receiving the request which the client has transmitted for the response to the server, the request including input data to the content and the identifier; and a content synthesis section for synthesizing the input data extracted from the request with content retrieved from the logging database using the identifier extracted from the request and for recording the resultant in the logging database. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供能够记录用于审计等的有用，可视化和可理解的操作日志的系统。 解决方案：系统具有：响应接收部分，用于接收服务器已经发送给客户端的响应，该响应包括用于将数据输入到客户端的内容; 响应发送部分，用于向客户端发送包括用于识别与该请求对应的内容的标识符的响应; 记录数据库，其中内容和标识符被关联和记录; 请求接收部分，用于接收客户端针对服务器的响应发送的请求，该请求包括对内容的输入数据和标识符; 以及内容合成部分，用于使用从请求中提取的标识符，将从请求中提取的输入数据与从日志记录数据库检索的内容相结合，并将结果记录在记录数据库中。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2001051293A

公开(公告)日：2001-02-23

申请号：JP21460399

申请日：1999-07-29

Applicant: IBM

Inventor： TSUJIMURA TAKATOSHI ,  MIYAMOTO TAKASHI ,  TOKUHIRO OSAMU ,  MOROOKA MITSUO

IPC: G09F9/30 ,  G02F1/133 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1365 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To reduce the number of necessary processes in the manufacturing processes of thin-film transistors, and also to prevent an abnormal potential from occurring by the cause of current leaking from data lines. SOLUTION: This transistor is mounted on a prescribed substrate and is also provide with a gate electrode 30 formed in a prescribed pattern, a semiconductor layer formed corresponding to the patterning of the gate electrode 30, a pixel electrode 25 formed via this semiconductor layer, and a signal electrode formed via the semiconductor layer and also arranged with a prescribed gap from the pixel electrode 25. Then, this signal electrode is arranged at such a position that crosstalk current is prevented from flowing into the pixel electrode 25 from adjacent signal lines 32b, 32c via the semiconductor layer.