公开(公告)号：US6436742B2

公开(公告)日：2002-08-20

申请号：US87136301

申请日：2001-05-31

Applicant: IBM

Inventor： MIYAMOTO TAKASHI ,  TSUJIMURA TAKATOSHI

IPC: H01L21/336 ,  H01L29/786 ,  H01L21/00 ,  H01L21/84

CPC classification number: H01L29/66765 ,  H01L29/78609 ,  H01L29/78669

Abstract: The present invention provides a thin film transistor (TFT) and a fabrication method thereof which suppresses the back channel effects in which a leakage current flows between a source electrode and a drain electrode at times during a turn off state of the TFT. A thin silicon oxynitride film 90 having a thickness preferably equal to or less than 50 Å is formed between an amorphous silicon layer 40 and a channel passivation film 50 (a silicon nitride film) above a back channel region 100 between a source electrode and a drain electrode of an inverted staggered type TFT to cause Si-O bonds to exist in an upper interface of the amorphous silicon layer. The Si-O bonds increase the Density of States in the back channel region and has an effect for suppressing the leakage current through the back channel region 100 at times during the turn off of the TFT.

Abstract translation: 本发明提供一种薄膜晶体管（TFT）及其制造方法，其抑制在TFT的关断状态期间的时间期间漏电流在源极和漏电极之间流动的反向沟道效应。 在非晶硅层40和源电极与漏极之间的背沟道区域100上方的沟道钝化膜50（氮化硅膜）之间形成厚度优选等于或小于50埃的薄氮氧化硅膜90。 反向交错型TFT的电极，使得Si-O键存在于非晶硅层的上界面。 Si-O键增加背沟道区域中的状态密度，并且具有在TFT关断期间的时间抑制通过背沟道区域100的漏电流的效果。

公开(公告)号：CA2351568C

公开(公告)日：2004-04-27

申请号：CA2351568

申请日：1999-12-01

Applicant: IBM

Inventor： TSUJIMURA TAKATOSHI ,  MIYAMOTO TAKASHI

IPC: G02F1/1343 ,  H01L21/3213 ,  H01L31/18 ,  H05K1/02 ,  H05K3/06 ,  H01B13/00 ,  G03F7/038 ,  G03F7/40 ,  H01L21/28 ,  H01L21/306

Abstract: To provide a process for patterning an ITO film, which is capable of preventing, for patterning an Indium-Tin-Oxide (ITO) film by using a chemically amplified resist, resist peeling or reduced adhesion even if the ITO film is exposed to a white light after resist development. An amorphous ITO film is first formed on a substrate, and a negative chemically amplified resist is directly provided on the film, exposed and. developed. In a resultant structure having a resist pattern on the amorphous ITO film, even if exposed to a white light, no resist peeling or no reduced adhesion occurs, and thus satisfactory visual inspection can be performed without adversely affecting subsequent steps. For the structure determined as a good product by visual inspection, the amorphous ITO film is etched through the resist pattern used as a mask, the resist pattern is removed, and then by heating the amorphous ITO film at the ITO crystallization temperature or higher, the crystallized ITO pattern having chemical resistance and good electrical conductivity can he obtained.

公开(公告)号：CA2351568A1

公开(公告)日：2000-06-15

申请号：CA2351568

申请日：1999-12-01

Applicant: IBM

Inventor： TSUJIMURA TAKATOSHI ,  MIYAMOTO TAKASHI

IPC: G02F1/1343 ,  H01L21/3213 ,  H01L31/18 ,  H05K1/02 ,  H05K3/06 ,  H01B13/00 ,  G03F7/038 ,  G03F7/40 ,  H01L21/28 ,  H01L21/306

Abstract: A method for patterning an indium-tin-oxide (ITO) film by using a chemically amplified resist, causing no resist separation nor adhesion degradation even if the ITO film is exposed to white light after the resist development. An amorphous ITO film is formed on a wafer. A negative chemically amplified resist is applied directly to the ITO film, and the resist film is exposed a nd developed. The structure having a resist pattern on the amorphous ITO film i s free from resist separation and adhesion degradation even if the resist pattern is exposed to white light, and therefore the later manufacturing ste ps are not adversely affected, enabling proper visual inspection. After the structure is judged to be acceptable at the visual inspection, the amorphous ITO film is etched using the resist pattern as a mask, and then the resist pattern is removed. The ITO film is heated over the crystallization temperature of the ITO to form a crystallized ITO pattern having a chemical- resistance and a good electrical conductivity.

公开(公告)号：IN2956CHN2009A

公开(公告)日：2015-08-07

申请号：IN2956CHN2009

申请日：2009-05-27

Applicant: IBM

Inventor： OKAMOTO KOHSUKE ,  MIYAMOTO TAKASHI

IPC: H04L9/08

Abstract: When a client apparatus receives a request for an electronic certificate from a server apparatus, the server apparatus reads a client containing personal information and a server public key of the server apparatus from a storage unit and encrypts the client certificate using the server public key. The client apparatus also a temporary electronic certificate by setting, in a basic field of an electronic certificate, a predetetmined item indicating that the electronic certificate is a temporary electronic certificate and by the client certificate having been encrypted in an extension field of the electronic certificate. Thenthe client apparatus sends the temporary electronic certificate to the server apparatus.

公开(公告)号：CA2663241C

公开(公告)日：2014-12-09

申请号：CA2663241

申请日：2007-10-24

Applicant: IBM

Inventor： OKAMOTO KOHSUKE ,  MIYAMOTO TAKASHI

IPC: H04L9/08 ,  H04L9/32

Abstract: [Object] To provide a technique for authenticating a communication partner using an electronic certificate containing personal information. [Solving Means] When a client apparatus receives a request for an electronic certificate from a server apparatus, the server apparatus reads a client certificate containing personal information and a server public key of the server apparatus from a storage unit and encrypts the client certificate using the server public key. The client apparatus also creates a temporary electronic certificate by setting, in a basic field of an electronic certificate, a predetermined item indicating that the electronic certificate is a temporary electronic certificate and by setting the client certificate having been encrypted in an extension field of the electronic certificate. Then, the client apparatus sends the temporary electronic certificate to the server apparatus.

公开(公告)号：CA2663241A1

公开(公告)日：2008-05-02

申请号：CA2663241

申请日：2007-10-24

Applicant: IBM

Inventor： OKAMOTO KOHSUKE ,  MIYAMOTO TAKASHI

IPC: H04L9/08 ,  H04L9/32

Abstract: [PROBLEMS TO BE SOLVED] It is an object to provide a technique for authen ticating a communication partner by means of an electronic certificate inclu ding personal information. [MEANS FOR SOLVING THE PROBLEMS] When a client de vice receives a request of an electronic certificate from a server device, t he client device reads out a client certificate including personal informati on and a server public key from a storing unit and encrypts the client certi ficate by using the server public key. Further, the client device sets a pre determined item in a basic region of the electronic certificate showing that the electronic certificate is temporary digital evidence and makes out a te mporary electronic certificate by setting the encrypted client certificate i n an expanded region of the electronic certificate. The client device then t ransmits the temporary electronic certificate to the server device.

公开(公告)号：PL348207A1

公开(公告)日：2002-05-06

申请号：PL34820799

申请日：1999-12-01

Applicant: IBM

Inventor： TSUJIMIRA TAKATOSHI ,  MIYAMOTO TAKASHI

IPC: G02F1/1343 ,  H01L21/3213 ,  H01L31/18 ,  H05K1/02 ,  H05K3/06 ,  H01B13/00 ,  G03F7/038 ,  H01L21/28

公开(公告)号：JP2009048510A

公开(公告)日：2009-03-05

申请号：JP2007215413

申请日：2007-08-22

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： OKAMOTO KOSUKE ,  MIYAMOTO TAKASHI

IPC: G06F13/00 ,  G06F21/20 ,  H04L12/66

CPC classification number: H04L63/0227 ,  H04L63/0281 ,  H04L63/101 ,  H04L63/104

Abstract: PROBLEM TO BE SOLVED: To perform additional processing in relaying data communication without worrying about the delay of transfer of a server's response to a client's access request. SOLUTION: A relaying device for relaying data communication between a client and a server comprises a receiving part for receiving an access request from the client to the server, a determination part for determining whether fixed time and more is required up to the transfer of a server's response to the access request to the client or not, a temporary response part for transmitting a temporary response message for reporting the separate transmission of the server's response from the relaying device to the client in response to a determination result indicating the requirement of the fixed time and more, and a transfer part for transferring the response to the client in response to a state that the server's response can be transferred to the client. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：在中继数据通信中执行附加处理，而不必担心服务器对客户端访问请求的响应的传输延迟。 解决方案：用于中继客户端和服务器之间的数据通信的中继设备包括：接收部分，用于从客户端接收对服务器的访问请求;确定部分，用于确定是否需要固定时间等于传输 服务器对客户端的访问请求的响应的响应部分，用于响应于指示要求的确定结果，发送用于将中继设备向服务器单独发送服务器响应的临时响应消息的临时响应部分 固定时间和更多，以及用于响应于可以将服务器的响应传送到客户端的状态将响应传送到客户端的传送部分。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JPH11330472A

公开(公告)日：1999-11-30

申请号：JP12194398

申请日：1998-05-01

Applicant: IBM

Inventor： TSUJIMURA TAKATOSHI ,  MIYAMOTO TAKASHI

IPC: H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a film transistor which prevents defects in which a leakage current arises between source and drain electrodes in off condition of a thin-film transistor(TFT), and its manufacture. SOLUTION: This is a reverse staggered type TFT and is provided with a thin (preferably 50 Å or under) silicon oxide film 90 between the amorphous silicon (a-Si) layer 40 of a back-channel region 100 between a source electrode and a drain electrode and a channel protective film 50 (silicon nitride film), and Si-O coupling is made to exist at the top interface of the a-Si layer. The Si-O coupling has the effect of suppressing the leakage current via the back channel region 100 in off condition of the TFT, by raising the state density of the back channel region 100 of the a-Si layer 40. Moreover, this thin silicon acid nitride film 90 includes sufficient Si-N couplings, so that the etching rate is lower than that of the silicon oxide film. Therefore, the etching control is simple, and it gives a reliable reverse staggered type TFT which is stable in voltage current property.

公开(公告)号：JP2001196591A

公开(公告)日：2001-07-19

申请号：JP2000004301

申请日：2000-01-13

Applicant: IBM

Inventor： TSUJIMURA TAKATOSHI ,  TOKUHIRO OSAMU ,  MOROOKA MITSUO ,  MIYAMOTO TAKASHI

IPC: G02F1/136 ,  G02F1/1368 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To reduce leakage current at a floating island formed on a thin-film transistor. SOLUTION: A source electrode 14 and a drain electrode 15, provided above an insulating substrate 11 at a prescribed interval, an a-Si film 16 provided to them, a gate insulating film 17 stacked on the a-Si film 16, and a gate electrode 18 stacked on the gate insulating film 17, are provided. The a-Si film 16 comprises a floating inland 20, which is not present above and below the gate electrode 18, while being present between the source electrode 14 and the drain electrode 15. The boron ion is implanted in the region, to form a boron ion implantation region 19.