公开(公告)号：DE60011837D1

公开(公告)日：2004-08-05

申请号：DE60011837

申请日：2000-04-04

Applicant: IBM

Inventor： DAUBENSPECK TIMOTHY H ,  MOTSIFF WILLIAM T

IPC: H01L21/82 ,  H01L23/52 ,  H01L21/3205 ,  H01L23/525

Abstract: A high laser absorption copper fuse can minimize the laser energy needed to delete the fuse portion of the conductor. Significantly, this type of fuse structure would allow for formation of copper fuses that can be deleted with appreciably less incident energy, mainly by increasing the absorption of the fuse link at the given incident laser energies. A metal wiring line contains a fuse link segment wherein the fuse link segment is composed of a stack of at least two metals. The underlayer material in the stack of metals is the primary electrical copper conductor, and the overlayer metal, also an electrical conductor, primarily tungsten or titanium-tungsten in composition, has predetermined thickness and optical properties chosen such that the combination of the overlayer metal with the underlayer metal provides for high absorption characteristics to incident infrared energy. Fabrication methods for providing overlaying material to the entire fuse link line, or to selective portions of the fuse link line are presented.

公开(公告)号：AU2003278847A8

公开(公告)日：2004-04-08

申请号：AU2003278847

申请日：2003-09-19

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： COWLEY ANDY ,  FAYAZ MOHAMMED F ,  MOTSIFF WILLIAM T ,  FRIESE GERALD R

IPC: H01L23/525

Abstract: The act of blowing an unpassivated electrical fuse (for example, fuse 405) using a laser can result in the splattering of the fuse material and result in electrical short circuits. A blast barrier (for example blast barrier 406) formed around an area of the fuse that is blown by the laser helps to contain the splattering of the fuse material. The blast barrier may be formed from the same material as the fuses themselves and therefore, can be created in the same fabrication step.

公开(公告)号：WO2005038876A3

公开(公告)日：2005-07-14

申请号：PCT/US2004034067

申请日：2004-10-14

Applicant: IBM ,  MOTSIFF WILLIAM T ,  MUZZY CHRISTOPHER D

Inventor： MOTSIFF WILLIAM T ,  MUZZY CHRISTOPHER D

IPC: H01L23/525 ,  H01L27/10

CPC classification number: H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A structure and associated method for protecting an electrical structure (25) during a fuse link deletion by focused radiation (52). The structure (1 ) comprises a fuse element (2), a protection plate (10), a first dielectric layer (14), and a second dielectric layer (4). The structure (1) is formed within a semiconductor device (5). The protection plate (10) is formed within the first dielectric layer (14) using a damascene process. The second dielectric layer (4) is formed over the protection plate (10) and the first dielectric layer (14). The fuse element (2) is formed over the second dielectric layer (4). The fuse element (2) is adapted to be cut with a laser beam (52). The dielectric constant of the second dielectric layer (4) is greater than the dielectric constant of the first dielectric layer (14). The protection plate (10) is adapted to shield the first dielectric layer (14) from energy from the laser beam (52).

Abstract translation: 一种用于在通过聚焦辐射（52）的熔丝链断开期间保护电结构（25）的结构和相关方法。 结构（1）包括熔丝元件（2），保护板（10），第一介电层（14）和第二电介质层（4）。 结构（1）形成在半导体器件（5）内。 使用镶嵌工艺在第一介电层（14）内形成保护板（10）。 第二介质层（4）形成在保护板（10）和第一介电层（14）之上。 熔丝元件（2）形成在第二介质层（4）上。 熔丝元件（2）适于用激光束（52）切割。 第二介质层（4）的介电常数大于第一介电层（14）的介电常数。 保护板（10）适于屏蔽来自激光束（52）的能量的第一介电层（14）。

公开(公告)号：WO2004027801A3

公开(公告)日：2005-02-24

申请号：PCT/US0329595

申请日：2003-09-19

Applicant: IBM ,  INFINEON TECHNOLOGIES CORP

Inventor： FRIESE GERALD R ,  COWLEY ANDY ,  FAYAZ MOHAMMED F ,  MOTSIFF WILLIAM T

IPC: H01L23/525 ,  H01L21/71

CPC classification number: H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The act of blowing an unpassivated electrical fuse (for example, fuse 405) using a laser can result in the splattering of the fuse material and result in electrical short circuits. A blast barrier (for example blast barrier 406) formed around an area of the fuse that is blown by the laser helps to contain the splattering of the fuse material. The blast barrier may be formed from the same material as the fuses themselves and therefore, can be created in the same fabrication step.

Abstract translation: 使用激光器吹动未激活的电熔丝（例如，熔丝405）的行为可能导致熔丝材料的飞溅并导致电气短路。 形成在由激光器熔断的熔丝区域周围形成的防爆屏障（例如鼓风屏障406）有助于容纳熔丝材料的飞溅。 防爆屏障可以由与熔丝本身相同的材料形成，因此可以在相同的制造步骤中形成。

公开(公告)号：WO2005013330A2

公开(公告)日：2005-02-10

申请号：PCT/US2004024228

申请日：2004-07-28

Applicant: IBM ,  DAUBENSPECK TIMOTHY H ,  GAMBINO JEFFREY P ,  LUCE STEPHEN E ,  MCDEVITT THOMAS J ,  MOTSIFF WILLIAM T ,  POULIOT MARK J ,  ROBBINS JENNIFER C

Inventor： DAUBENSPECK TIMOTHY H ,  GAMBINO JEFFREY P ,  LUCE STEPHEN E ,  MCDEVITT THOMAS J ,  MOTSIFF WILLIAM T ,  POULIOT MARK J ,  ROBBINS JENNIFER C

IPC: H01L20060101 ,  H01L21/301 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/78 ,  H01L23/00 ,  H01L23/28 ,  H01L23/58 ,  H01L

CPC classification number: H01L23/585 ,  H01L21/31111 ,  H01L21/32134 ,  H01L21/76838 ,  H01L21/78 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A crack stop (28) for low K dielectric materials of an integrated circuit (IC) formed on an IC chip using metal interconnects which do not form a self-passivating oxide layer, such as copper or silver interconnects, in a low-K dielectric material to prevent damage to the active area of the IC chip caused by chipping and cracking formed along peripheral edges of the IC chip during a dicing operation. A moisture barrier or edge seal (12) is formed as a metal stack positioned along the outer peripheral edges of the active area of the IC chip. The crack stop is formed by at least one trench or groove positioned outside of the moisture barrier/edge seal on the outer periphery of the IC chip.

Abstract translation: 使用金属互连在集成电路（IC）上形成集成电路（IC）的低K电介质材料的裂缝阻挡（28），所述金属互连在低K电介质中不形成自钝化氧化物层（例如铜或银互连） 材料以防止在切割操作期间由于沿着IC芯片的外围边缘形成的碎裂和破裂而导致对IC芯片的有源区域的损坏。 防潮层或边缘密封件（12）形成为沿着IC芯片的有效区域的外周边缘定位的金属堆叠。 通过位于IC芯片的外周上的防潮/边缘密封件外侧的至少一个沟槽或槽来形成止裂件。

公开(公告)号：DE60011837T2

公开(公告)日：2005-08-25

申请号：DE60011837

申请日：2000-04-04

Applicant: IBM

Inventor： DAUBENSPECK TIMOTHY H ,  MOTSIFF WILLIAM T

IPC: H01L21/82 ,  H01L21/3205 ,  H01L23/52 ,  H01L23/525

Abstract: A high laser absorption copper fuse can minimize the laser energy needed to delete the fuse portion of the conductor. Significantly, this type of fuse structure would allow for formation of copper fuses that can be deleted with appreciably less incident energy, mainly by increasing the absorption of the fuse link at the given incident laser energies. A metal wiring line contains a fuse link segment wherein the fuse link segment is composed of a stack of at least two metals. The underlayer material in the stack of metals is the primary electrical copper conductor, and the overlayer metal, also an electrical conductor, primarily tungsten or titanium-tungsten in composition, has predetermined thickness and optical properties chosen such that the combination of the overlayer metal with the underlayer metal provides for high absorption characteristics to incident infrared energy. Fabrication methods for providing overlaying material to the entire fuse link line, or to selective portions of the fuse link line are presented.

公开(公告)号：AU2003278847A1

公开(公告)日：2004-04-08

申请号：AU2003278847

申请日：2003-09-19

Applicant: IBM

Inventor： COWLEY ANDY ,  FAYAZ MOHAMMED F ,  MOTSIFF WILLIAM T ,  FRIESE GERALD R

IPC: H01L23/525

Abstract: The act of blowing an unpassivated electrical fuse (for example, fuse 405) using a laser can result in the splattering of the fuse material and result in electrical short circuits. A blast barrier (for example blast barrier 406) formed around an area of the fuse that is blown by the laser helps to contain the splattering of the fuse material. The blast barrier may be formed from the same material as the fuses themselves and therefore, can be created in the same fabrication step.

公开(公告)号：ES2221602T3

公开(公告)日：2005-01-01

申请号：ES00107337

申请日：2000-04-04

Applicant: IBM

Inventor： DAUBENSPECK TIMOTHY H ,  MOTSIFF WILLIAM T

IPC: H01L21/82 ,  H01L21/3205 ,  H01L23/52 ,  H01L23/525

Abstract: Un chip semiconductor que tiene una disposición fusible que comprende un conductor eléctrico que tiene una primera capa de un primer material (24) eléctricamente conductor y una segunda capa de un segundo material (26) eléctricamente conductor, teniendo dicha segunda capa un espesor, una composición y unas propiedades ópticas tales que la combinación de dicha segunda capa con dicha primera capa proporciona características de gran absorción de la energía de la radiación infrarroja incidente emitida desde un láser, minimizando así la cantidad de dicha energía requerida para suprimir, o fundir, la disposición fusible, caracterizado porque, dicha primera capa de dicho primer material (24) está provista de una parte selectiva rebajada (32) y dicha parte selectiva rebajada (32) está llena con dicha segunda capa de dicho segundo material (26).

公开(公告)号：AT270463T

公开(公告)日：2004-07-15

申请号：AT00107337

申请日：2000-04-04

Applicant: IBM

Inventor： DAUBENSPECK TIMOTHY H ,  MOTSIFF WILLIAM T

IPC: H01L21/3205 ,  H01L21/82 ,  H01L23/52 ,  H01L23/525

Abstract: A high laser absorption copper fuse can minimize the laser energy needed to delete the fuse portion of the conductor. Significantly, this type of fuse structure would allow for formation of copper fuses that can be deleted with appreciably less incident energy, mainly by increasing the absorption of the fuse link at the given incident laser energies. A metal wiring line contains a fuse link segment wherein the fuse link segment is composed of a stack of at least two metals. The underlayer material in the stack of metals is the primary electrical copper conductor, and the overlayer metal, also an electrical conductor, primarily tungsten or titanium-tungsten in composition, has predetermined thickness and optical properties chosen such that the combination of the overlayer metal with the underlayer metal provides for high absorption characteristics to incident infrared energy. Fabrication methods for providing overlaying material to the entire fuse link line, or to selective portions of the fuse link line are presented.