公开(公告)号：EP1673809A4

公开(公告)日：2009-08-26

申请号：EP04795254

申请日：2004-10-14

Applicant: IBM

Inventor： MOTSIFF WILLIAM T ,  MUZZY CHRISTOPHER D

IPC: H01L27/10 ,  H01L23/525

CPC classification number: H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A structure and associated method for protecting an electrical structure (25) during a fuse link deletion by focused radiation (52). The structure (1 ) comprises a fuse element (2), a protection plate (10), a first dielectric layer (14), and a second dielectric layer (4). The structure (1) is formed within a semiconductor device (5). The protection plate (10) is formed within the first dielectric layer (14) using a damascene process. The second dielectric layer (4) is formed over the protection plate (10) and the first dielectric layer (14). The fuse element (2) is formed over the second dielectric layer (4). The fuse element (2) is adapted to be cut with a laser beam (52). The dielectric constant of the second dielectric layer (4) is greater than the dielectric constant of the first dielectric layer (14). The protection plate (10) is adapted to shield the first dielectric layer (14) from energy from the laser beam (52).

公开(公告)号：EP1547144A4

公开(公告)日：2009-01-07

申请号：EP03770364

申请日：2003-09-19

Applicant: IBM ,  INFINEON TECHNOLOGIES CORP

Inventor： FRIESE GERALD R ,  COWLEY ANDY ,  FAYAZ MOHAMMED F ,  MOTSIFF WILLIAM T

IPC: H01L23/525

CPC classification number: H01L23/5258 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The act of blowing an unpassivated electrical fuse (for example, fuse 405) using a laser can result in the splattering of the fuse material and result in electrical short circuits. A blast barrier (for example blast barrier 406) formed around an area of the fuse that is blown by the laser helps to contain the splattering of the fuse material. The blast barrier may be formed from the same material as the fuses themselves and therefore, can be created in the same fabrication step.

Abstract translation: 使用激光吹入未激活的电熔丝（例如，熔丝405）的动作可能导致熔丝材料的飞溅并导致电气短路。 形成在由激光器熔断的保险丝的区域周围形成的防爆屏障（例如鼓风屏障406）有助于容纳熔丝材料的飞溅。 防爆屏障可以由与熔丝本身相同的材料形成，因此可以在相同的制造步骤中形成。

公开(公告)号：EP1687851A4

公开(公告)日：2011-02-23

申请号：EP04810291

申请日：2004-11-04

Applicant: IBM

Inventor： BADAMI DINESH A ,  LEE TOM C ,  LI BAOZHEN ,  MATUSIEWICZ GERALD ,  MOTSIFF WILLIAM T ,  MUZZY CHRISTOPHER D ,  WATSON KIMBALL M ,  WYNNE JEAN E

IPC: H01L27/10 ,  H01L23/525 ,  H01L23/58 ,  H01L29/00

CPC classification number: H01L23/5258 ,  H01L23/525 ,  H01L23/5254 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP1687850A4

公开(公告)日：2008-06-25

申请号：EP04779326

申请日：2004-07-28

Applicant: IBM

Inventor： DAUBENSPECK TIMOTHY H ,  GAMBINO JEFFREY P ,  LUCE STEPHEN E ,  MCDEVITT THOMAS J ,  MOTSIFF WILLIAM T ,  POULIOT MARK J ,  ROBBINS JENNIFER C

IPC: H01L23/28 ,  H01L20060101 ,  H01L21/301 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/78 ,  H01L23/00 ,  H01L23/58

CPC classification number: H01L23/585 ,  H01L21/31111 ,  H01L21/32134 ,  H01L21/76838 ,  H01L21/78 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A crack stop (28) for low K dielectric materials of an integrated circuit (IC) formed on an IC chip using metal interconnects which do not form a self-passivating oxide layer, such as copper or silver interconnects, in a low-K dielectric material to prevent damage to the active area of the IC chip caused by chipping and cracking formed along peripheral edges of the IC chip during a dicing operation. A moisture barrier or edge seal (12) is formed as a metal stack positioned along the outer peripheral edges of the active area of the IC chip. The crack stop is formed by at least one trench or groove positioned outside of the moisture barrier/edge seal on the outer periphery of the IC chip.

公开(公告)号：EP1668692A4

公开(公告)日：2007-05-09

申请号：EP04809842

申请日：2004-09-30

Applicant: IBM

Inventor： GEFFKEN ROBERT M ,  MOTSIFF WILLIAM T

IPC: H01L21/76 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L29/06

CPC classification number: H01L21/76831 ,  H01L21/76811 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An adjustable self aligned low capacitance integrated circuit air gap structure comprises a first interconnect (64a) adjacent a second interconnect (64b) on an interconnect level, spacers (60b, 60c) formed along adjacent sides of the first and second interconnects, and an air gap (68) formed between the first and second interconnects. The air gap extends above an upper surface (74a, 74b) of at least one of the first and second interconnects and below a lower surface (76a, 76b) of at least one of the first and second interconnects, and the distance between the spacers defines the width of the air gap. The air gap is self-aligned to the adjacent sides of the first and second interconnects.

公开(公告)号：JP2005210121A

公开(公告)日：2005-08-04

申请号：JP2005010872

申请日：2005-01-18

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： JEFFREY P GANBINO ,  MOTSIFF WILLIAM T ,  ERIC G WALTON

IPC: H01F41/04 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/60 ,  H01L21/822 ,  H01L23/31 ,  H01L23/52 ,  H01L23/522 ,  H01L23/532 ,  H01L27/04

CPC classification number: H01L28/10 ,  H01F41/041 ,  H01L21/76852 ,  H01L21/76885 ,  H01L23/3192 ,  H01L23/5227 ,  H01L23/53238 ,  H01L24/02 ,  H01L2224/0401 ,  H01L2224/13022 ,  H01L2224/13147 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/0105 ,  H01L2924/01055 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  Y10T29/4902 ,  Y10T29/49155 ,  Y10T29/49165 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To integrate high performance copper inductors with global interconnects, and with either Al bond pads or Cu bond pads. SOLUTION: The integration of high performance copper inductors are conducted wherein a tall, Cu laminate spiral inductor is formed at the last metal level, and at the last metal + 1 level, with the metal levels interconnected by a bar via having the same spiral shape as the spiral metal inductors at the last metal level and the last metal + 1 level. The invention provides methods for integrating the formation of thick inductors with the formation of bond pads, terminals and interconnect wiring with the last metal + 1 wiring. The subject invention uses the dielectric deposition, spacer formation, and/or selective deposition of a passivating metal such as CoWP, to passivate a Cu inductor that is formed after the last metal layer. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：将高性能铜电感器与全局互连以及Al接合焊盘或Cu接合焊盘集成在一起。

解决方案：实现了高性能铜电感器的集成，其中在最后的金属级别形成高的Cu层压螺旋电感器，并且在最后的金属+ 1级别处，金属水平通过棒互连， 与螺旋金属电感器相同的螺旋形状在最后的金属水平和最后的金属+ 1水平。 本发明提供了将厚电感器的形成与最后的金属+ 1布线形成接合焊盘，端子和互连布线的方法。 本发明使用诸如CoWP的钝化金属的电介质沉积，间隔物形成和/或选择性沉积来钝化在最后一个金属层之后形成的Cu电感器。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004228569A

公开(公告)日：2004-08-12

申请号：JP2004003456

申请日：2004-01-08

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Maschines Corporation

Inventor： COONEY III EDWARD C ,  ROBERT M JEFFKEN ,  MCGAHAY VINCENT J ,  MOTSIFF WILLIAM T ,  MURRAY MARK P ,  PIPER AMANDA L ,  STAMPER ANTHONY K ,  THOMAS DAVID C ,  TYBERG CHRISTY S ,  WEBSTER ELIZABETH T

IPC: H01L21/3205 ,  H01L21/768 ,  H01L21/82 ,  H01L23/52 ,  H01L23/522 ,  H01L23/525 ,  H01L23/532

CPC classification number: H01L21/76808 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76892 ,  H01L23/525 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide re-work processing methods of both the level of a single chip connecting or an interconnecting metal and a multilevel. SOLUTION: The method of re-working a BEOL (a back end of a process line) metallization levels of damascene metallurgy comprises the processes of: forming a plurality of BEOL metallization levels 101, 102 on a substrate 110; forming line and via portions in the BEOL metallization level; exposing the line section and the via section by selectively removing at least one BEOL metallization level; and replacing a removed BEOL metallization level with at least one of new BEOL metallization levels. The BEOL metallization levels 101, 102 comprises a first dielectric layers 120, 130 and second dielectric layers 125, 135, and the first dielectric layer includes a material having a dielectric constant lower than that of the second dielectric layer. COPYRIGHT: (C)2004,JPO&NCIPI

Abstract translation: 要解决的问题：提供单芯片连接或互连金属和多层的水平的再加工处理方法。 解决方案：重新加工大马士革冶金的BEOL（工艺线的后端）金属化水平的方法包括以下过程：在衬底110上形成多个BEOL金属化水平101,102; 在BEOL金属化水平上形成线和通孔部分; 通过选择性地去除至少一个BEOL金属化水平来暴露线段和通路部分; 并用至少一个新的BEOL金属化水平替换去除的BEOL金属化水平。 BEOL金属化层101,102包括第一电介质层120,130和第二电介质层125,135，并且第一电介质层包括介电常数低于第二电介质层的介电常数的材料。 版权所有（C）2004，JPO＆NCIPI

公开(公告)号：JP2000323580A

公开(公告)日：2000-11-24

申请号：JP2000124143

申请日：2000-04-25

Applicant: IBM

Inventor： DAUBENSPECK TIMOTHY H ,  MOTSIFF WILLIAM T

IPC: H01L21/3205 ,  H01L21/82 ,  H01L23/52 ,  H01L23/525

Abstract: PROBLEM TO BE SOLVED: To provide a copper fuse of high laser absorption which minimizes laser energy required for erasing the fuse section of a conductor. SOLUTION: Metal wiring include a fuse segment, consisting of at least two kinds of metallic stacks. A material 24 of the metallic stack is a main conductor consisting of copper, and also the metal (that is, the conductor whose composition is mainly tungsten or titanium-tungsten) 26 of the upper layer has a prescribed thickness and optical properties which are selected so that the coupling between the lower metal 24 and the upper metal 26 gives high absorptive property to incident energy.

公开(公告)号：WO2005034200A2

公开(公告)日：2005-04-14

申请号：PCT/US2004032404

申请日：2004-09-30

Applicant: IBM ,  GEFFKEN ROBERT M ,  MOTSIFF WILLIAM T

Inventor： GEFFKEN ROBERT M ,  MOTSIFF WILLIAM T

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L

CPC classification number: H01L21/76831 ,  H01L21/76811 ,  H01L21/7682 ,  H01L23/5222 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An adjustable self aligned low capacitance integrated circuit air gap structure comprises a first interconnect (64a) adjacent a second interconnect (64b) on an interconnect level, spacers (60b, 60c) formed along adjacent sides of the first and second interconnects, and an air gap (68) formed between the first and second interconnects. The air gap extends above an upper surface (74a, 74b) of at least one of the first and second interconnects and below a lower surface (76a, 76b) of at least one of the first and second interconnects, and the distance between the spacers defines the width of the air gap. The air gap is self-aligned to the adjacent sides of the first and second interconnects.

Abstract translation: 可调整的自对准低电容集成电路气隙结构包括邻近互连层上的第二互连（64b）的第一互连（64a），沿第一和第二互连的相邻侧形成的间隔物（60b，60c） 间隙（68）形成在第一和第二互连之间。 空气间隙延伸到第一和第二互连中的至少一个的上表面（74a，74b）上方，并且位于第一和第二互连中的至少一个互连的下表面（76a，76b）的下方以及间隔件之间的距离 定义气隙的宽度。 气隙与第一和第二互连的相邻侧自对准。

公开(公告)号：WO2005048304A3

公开(公告)日：2005-07-28

申请号：PCT/US2004036660

申请日：2004-11-04

Applicant: IBM ,  BADAMI DINESH A ,  LEE TOM C ,  LI BAOZHEN ,  MATUSIEWICZ GERALD ,  MOTSIFF WILLIAM T ,  MUZZY CHRISTOPHER D ,  WATSON KIMBALL M ,  WYNNE JEAN E

Inventor： BADAMI DINESH A ,  LEE TOM C ,  LI BAOZHEN ,  MATUSIEWICZ GERALD ,  MOTSIFF WILLIAM T ,  MUZZY CHRISTOPHER D ,  WATSON KIMBALL M ,  WYNNE JEAN E

IPC: H01L23/525 ,  H01L27/10 ,  H01L23/58 ,  H01L29/00

CPC classification number: H01L23/5258 ,  H01L23/525 ,  H01L23/5254 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method and structure for fabricating a laser fuse and a method for programming the laser fuse. The laser fuse includes a first dielectric layer having two vias filled with a first self-passivated electrically conducting material. A fuse link is on top of the first dielectric layer. The fuse link electrically connects the two vias and includes a second material having a characteristic of changing its electrical resistance after being exposed to a laser beam. Two mesas are over the fuse link and directly over the two vias. The two mesas each include a third self-passivated electrically conducting material. The laser fuse is programmed by directing a laser beam to the fuse link. The laser beam is controlled such that, in response to the impact of the laser beam upon the fuse link, the electrical resistance of the fuse link changes but the fuse link is not blown off. Such electrical resistance change is sensed and converted to digital signal.

Abstract translation: 用于制造激光熔丝的方法和结构以及用于编程激光熔丝的方法。 激光熔丝包括具有填充有第一自钝化导电材料的两个通孔的第一介电层。 熔丝连接在第一电介质层的顶部。 熔断体将两个通孔电连接并且包括具有在暴露于激光束之后改变其电阻的特性的第二材料。 两个台面位于熔丝链上方，直接穿过两个通孔。 两个台面各自包括第三自钝化导电材料。 激光熔丝通过将激光束引导到熔丝链来编程。 控制激光束，使得响应于激光束对熔丝链的影响，熔丝链的电阻改变，但熔丝链不会被吹掉。 这种电阻变化被检测并转换成数字信号。