公开(公告)号：AU9202901A

公开(公告)日：2002-04-15

申请号：AU9202901

申请日：2001-09-28

Applicant: IBM

Inventor： MOY DAN ,  RITTER MARK ,  ROGERS DENNIS ,  WELSER JEFFREY JOHN

IPC: H01L27/146 ,  H01L21/76 ,  H01L21/762 ,  H01L27/12 ,  H01L29/861 ,  H01L31/00 ,  H01L31/0236 ,  H01L31/0352 ,  H01L31/075 ,  H01L31/10 ,  H01L31/101 ,  H01L31/105 ,  H01L31/0232

Abstract: A semiconductor device (and method for forming the device) includes a silicon-on-insulator (SOI) wafer formed on a substrate surface. An isolation trench in the wafer surface surrounds alternating p-type trenches and n-type trenches and electrically isolates the device from the substrate, thereby allowing the device to be effectively utilized as a differential detector in an optoelectronic circuit.

公开(公告)号：DE68926440T2

公开(公告)日：1996-11-07

申请号：DE68926440

申请日：1989-12-12

Applicant: IBM

Inventor： JOSHI RAJIY V ,  OH CHOON-SIK ,  MOY DAN

IPC: H01L21/3205 ,  C23C16/08 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L23/52

Abstract: Selective deposition of a refractory metal on a silicon substrate utilizing high temperatures and a silane reduction process in which the flow rate ratio of silane to refractory metal halide gas is less than one. In a second embodiment, an additional layer of the refractory metal is deposited utilizing a hydrogen reduction of the metal halide gas at very high temperatures. In both embodiments, a refractory metal barrier layer may be provided by forming a self-aligned refractory metal silicide layer. Alternatively, a two layer self-aligned barrier is formed of a refractory metal silicide lower layer and a refractory metal nitride upper layer and the refractory metal is selectively deposited on the metal nitride.

公开(公告)号：CA1273439A

公开(公告)日：1990-08-28

申请号：CA565452

申请日：1988-04-29

Applicant: IBM

Inventor： BRODSKY STEPHEN B ,  MOY DAN ,  JOSHI RAJIV V

IPC: H01L23/52 ,  H01L21/3205 ,  H01L29/49 ,  H01L29/78 ,  H01L29/76

Abstract: YO986-082 A gate structure for integrated circuit devices which includes a work function layer, a low resistivity layer, and an electrically conductive barrier layer between the two other layers to prevent the other two layers from intermixing. The work function controlling layer is preferably selected from the group of tungsten, molybdenum, their silicides, or a combination thereof.