公开(公告)号：DE3571892D1

公开(公告)日：1989-08-31

申请号：DE3571892

申请日：1985-04-17

Applicant: IBM

Inventor： KINNEY WAYNE IRVING ,  LASKY JEROME BRETT ,  NESBIT LARRY ALAN

IPC: H01L21/76 ,  H01L21/265 ,  H01L21/306 ,  H01L21/762

Abstract: A method is provided for forming semiconductor structures having dielectrically isolated silicon regions on one side of a silicon body. This is accomplished by forming in the silicon body a set of buried regions (30) and a set of surface regions (50) having characteristics which make them anodically etch slower than the remaining portion of the silicon body (10). These two sets of regions define portions (32, 52, 62) in the silicon body which are anodically etched to form porous silicon regions which are oxidized to form an isolation structure that isolates the silicon surface regions (50) from each other and the remaining portion (62) of the silicon body. Typically in a P-type silicon body the buried and surface regions (30, 50) are N-type regions formed through ion implantation. Using these N-type regions to control the exposure of the P-type material to the anodic etching solution and the formation of the porous silicon regions, a structure is obtained wherein surface monocrystalline silicon regions are isolated from the rest of the silicon body by a uniform layer of silicon dioxide (62) having a predetermined thickness.

公开(公告)号：DE3277482D1

公开(公告)日：1987-11-19

申请号：DE3277482

申请日：1982-07-13

Applicant: IBM

Inventor： GEIPEL HENRY JOHN ,  NESBIT LARRY ALAN

IPC: H01L29/78 ,  H01L21/027 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/768 ,  H01L23/52 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49 ,  H01L21/285 ,  H01L21/90

Abstract: A method of fabricating a silicide structure includes depositing a metal, e.g., molybdenum or tungsten, directly onto a thin insulating layer (12) of silicon dioxide and/or silicon nitride formed on a semiconductor substrate (10), co-depositing the metal and silicon onto the metal layer (20) and then depositing silicon (24) onto the co-deposited metal-silicon layer (22). This structure is annealed at a temperature sufficient to form a metal silicide between the thin insulating layer (12) and the layer of silicon (24). The silicon layer (24) serves as a source of silicon for the metal layer (20) which is consumed during the annealing step to form, along with the co-deposited metal-silicon layer (22), a relatively thick metal silicide layer directly on the thin silicon dioxide layer (12). A sufficiently thick silicon layer (24) is initially provided on the codeposited metal-silicon layer (22) so that a portion of the initial silicon layer remains after the annealing step has been completed. This excess silicon may be oxidized to form a passivating layer on top of the thick metal silicide layer.