Shadow mask sidewall tunnel junction for quantum computing

    公开(公告)号:GB2577432B

    公开(公告)日:2020-09-16

    申请号:GB201918083

    申请日:2017-12-19

    Applicant: IBM

    Abstract: A technique relates to forming a sidewall tunnel junction. A first conducting layer is formed using a first shadow mask evaporation. A second conducting layer is formed on a portion of the first conducting layer, where the second conducting layer is formed using a second shadow mask evaporation. An oxide layer is formed on the first conducting layer and the second conducting layer. A third conducting layer is formed on part of the oxide layer, such that the sidewall tunnel junction is positioned between the first conducting layer and the third conducting layer.

    Shadow mask sidewall tunnel junction for quantum computing

    公开(公告)号:GB2577432A

    公开(公告)日:2020-03-25

    申请号:GB201918083

    申请日:2017-12-19

    Applicant: IBM

    Abstract: A technique relates to forming a sidewall tunnel junction. A first conducting layer is formed using a first shadow mask evaporation. A second conducting layer is formed on a portion of the first conducting layer, where the second conducting layer is formed using a second shadow mask evaporation. An oxide layer is formed on the first conducting layer and the second conducting layer. A third conducting layer is formed on part of the oxide layer, such that the sidewall tunnel junction is positioned between the first conducting layer and the third conducting layer.

    Qubit network secure identification

    公开(公告)号:GB2576274A

    公开(公告)日:2020-02-12

    申请号:GB201915909

    申请日:2017-11-28

    Applicant: IBM

    Abstract: A technique relates to a superconducting chip. Resonant units each include a Josephson junction. The resonant units have resonant frequencies whose differences are based on a variation in the Josephson junction. A transmission medium is coupled to the resonant units, and the transmission medium is configured to output a sequence of the resonant frequencies as an identification of the chip.

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