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    11.
    发明专利
    未知

    公开(公告)号：DE2729074A1

    公开(公告)日：1978-03-09

    申请号：DE2729074

    申请日：1977-06-28

    Applicant: IBM

    Inventor： KOOPMAN NICHOLAS GEORGE ,  TOTTA PAUL ANTHONY

    IPC: H01L23/373 ,  H01L23/433 ,  H01L23/36 ,  H05K7/20

    Abstract: The operational heat of a semiconductor chip (1) is transferred to a cooling can (5) by means of a metal cushion (7). The metal cushion is permanently connected to the can or the chip on one side whilst its opposite side is in loose contact. This creates a connection of high thermal conductivity without exposing the chip to inadmissible mechanical stresses.

    ELECTRICAL CONDUCTORS
    12.
    发明专利
    ELECTRICAL CONDUCTORS 未知

    公开(公告)号：AU1678170A

    公开(公告)日：1972-01-06

    申请号：AU1678170

    申请日：1970-06-24

    Applicant: IBM

    Inventor： BERENBAUM LEONARD ,  ROSENBERG ROBERT ,  TOTTA PAUL ANTHONY

    IPC: H05K3/24 ,  H01B1/02 ,  H01L21/00 ,  H01L21/28 ,  H01L21/283 ,  H01L21/3205 ,  H01L23/52 ,  H01L29/43 ,  H05K1/04 ,  H05K1/08 ,  H01L3/00 ,  H01L3/12 ,  H01L7/02 ,  H01L7/34 ,  H05K3/10

    Abstract: 1305236 Semi-conductor devices INTERNATIONAL BUSINESS MACHINES CORP 16 June 1970 [30 June 1969] 29114/70 Heading H1K Electromigration in and environmental damage to conductive tracks of silver in integrated circuits is reduced by surrounding the tracks with a layer consisting of one or more refractory metals, such as nickel, chromium, tantalum, titanium, molybdenum and tungsten. Typically the tracks extend to platinum silicide contacts located in apertures in a silicon dioxide passivating layer on a silicon wafer. In one preferred embodiment layers of chromium, silver and chromium are vapour deposited overall to thicknesses of 700, 7000 and 500 Š respectively and then etched or back-sputtered using photoresist masking to form conductive tracks but with the lower chromium layer maintained intact. Nickel is then deposited by electroplating, the tracks protected by photoresist, and excess nickel and underlying chromium removed by etching or back-sputtering to leave nickel only on the edges of the silver tracks. In another embodiment, Fig. 6D, the wafer, carrying a Cr-Ag-Cr sandwich track produced as above, is coated by evaporation or sputtering with chromium to a thickness of 1000 Š and the chromium between tracks removed. In yet another case a silver coated chromium track is coated with 200 Š of nickel by electroplating overall followed by back etching of unwanted nickel. Finally in a simpler method the tracks are made by coevaporation of silver and chromium (1-5% by weight) at

    13.
    发明专利
    未知

    公开(公告)号：DE69523991D1

    公开(公告)日：2002-01-03

    申请号：DE69523991

    申请日：1995-05-19

    Applicant: IBM

    Inventor： ATKINSON NYE III ,  ROEDER JEFFREY FREDERICK ,  TONG HO-MING ,  TOTTA PAUL ANTHONY

    IPC: H05K3/34 ,  H01L21/60 ,  H01L23/485 ,  H01L23/532 ,  H01L23/482 ,  H01L23/488 ,  H01L23/492 ,  H01L23/498

    Abstract: An process and a structure for an improved solder terminal is disclosed. The improved solder terminal is made of a bottom metallic adhesion layer, a CrCu intermediate layer on top of the adhesion layer, a solder bonding layer above the CrCu layer and a solder top layer. The adhesion layer is either TiW or TiN. A process for fabricating an improved terminal metal consists of depositing an adhesive metallic layer, a layer of CrCu over the adhesive layer and a layer of solder bonding material, over which a solder layer is formed in selective regions and the underlying layers are etched using solder regions as a mask.

    18.
    发明专利
    未知

    公开(公告)号：DE69523991T2

    公开(公告)日：2002-08-01

    申请号：DE69523991

    申请日：1995-05-19

    Applicant: IBM

    Inventor： ATKINSON NYE III ,  ROEDER JEFFREY FREDERICK ,  TONG HO-MING ,  TOTTA PAUL ANTHONY

    IPC: H05K3/34 ,  H01L21/60 ,  H01L23/485 ,  H01L23/532 ,  H01L23/482 ,  H01L23/488 ,  H01L23/492 ,  H01L23/498

    Abstract: An process and a structure for an improved solder terminal is disclosed. The improved solder terminal is made of a bottom metallic adhesion layer, a CrCu intermediate layer on top of the adhesion layer, a solder bonding layer above the CrCu layer and a solder top layer. The adhesion layer is either TiW or TiN. A process for fabricating an improved terminal metal consists of depositing an adhesive metallic layer, a layer of CrCu over the adhesive layer and a layer of solder bonding material, over which a solder layer is formed in selective regions and the underlying layers are etched using solder regions as a mask.

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