公开(公告)号：DE69523991D1

公开(公告)日：2002-01-03

申请号：DE69523991

申请日：1995-05-19

Applicant: IBM

Inventor： ATKINSON NYE III ,  ROEDER JEFFREY FREDERICK ,  TONG HO-MING ,  TOTTA PAUL ANTHONY

IPC: H05K3/34 ,  H01L21/60 ,  H01L23/485 ,  H01L23/532 ,  H01L23/482 ,  H01L23/488 ,  H01L23/492 ,  H01L23/498

Abstract: An process and a structure for an improved solder terminal is disclosed. The improved solder terminal is made of a bottom metallic adhesion layer, a CrCu intermediate layer on top of the adhesion layer, a solder bonding layer above the CrCu layer and a solder top layer. The adhesion layer is either TiW or TiN. A process for fabricating an improved terminal metal consists of depositing an adhesive metallic layer, a layer of CrCu over the adhesive layer and a layer of solder bonding material, over which a solder layer is formed in selective regions and the underlying layers are etched using solder regions as a mask.

公开(公告)号：IE79088B1

公开(公告)日：1998-04-08

申请号：IE960846

申请日：1996-12-02

Applicant: IBM

Inventor： ANDRICACOS PANAYOTIS CONSTANTI ,  DATTA MADAV ,  DELIGIANNI HARIKLIA ,  HORKANS WILMA JEAN ,  KANG SUNG KWON ,  KWIETNIAK KEITH THOMAS ,  MATHAD GANGADHARA SWAMI ,  PURUSHOTHAMAN SAMPATH ,  SHI LEATHEN ,  TONG HO-MING

IPC: B23K35/26 ,  B23K35/00 ,  B32B15/01 ,  C22C13/00 ,  C22C13/02 ,  H01L21/60 ,  H01L23/485 ,  H01L23/488

Abstract: An interconnection structure suitable for the connection of microelectronic circuit chips to packages is provided by this invention. In particular, the invention pertains to the area-array or flip-chip technology often called C4 (controlled collapse chip connection). The structure comprises an adhesion/barrier layer deposited on a passivated substrate (e.g., a silicon wafer), optionally an additional adhesion layer, a solderable layer of a metal selected from the group consisting of Ni, Co, Fe, NiFe, NiCo, CoFe and NiCoFe on the adhesion/barrier layer, and a lead-free solder ball comprising tin as the predominate component and one or more alloying elements selected from Bi, Ag, and Sb, and further optionally including one or more elements selected from the group consisting of Zn, In, Ni, Co and Cu.

公开(公告)号：DE69523991T2

公开(公告)日：2002-08-01

申请号：DE69523991

申请日：1995-05-19

Applicant: IBM

Inventor： ATKINSON NYE III ,  ROEDER JEFFREY FREDERICK ,  TONG HO-MING ,  TOTTA PAUL ANTHONY

IPC: H05K3/34 ,  H01L21/60 ,  H01L23/485 ,  H01L23/532 ,  H01L23/482 ,  H01L23/488 ,  H01L23/492 ,  H01L23/498

Abstract: An process and a structure for an improved solder terminal is disclosed. The improved solder terminal is made of a bottom metallic adhesion layer, a CrCu intermediate layer on top of the adhesion layer, a solder bonding layer above the CrCu layer and a solder top layer. The adhesion layer is either TiW or TiN. A process for fabricating an improved terminal metal consists of depositing an adhesive metallic layer, a layer of CrCu over the adhesive layer and a layer of solder bonding material, over which a solder layer is formed in selective regions and the underlying layers are etched using solder regions as a mask.

公开(公告)号：DE69410772D1

公开(公告)日：1998-07-09

申请号：DE69410772

申请日：1994-11-24

Applicant: IBM

Inventor： LUSTIG NAFTALI ELIAHU ,  SAENGER KATHERINE LYNN ,  TONG HO-MING

IPC: G01N21/55 ,  B24B37/013 ,  B24B49/04 ,  B24B49/12 ,  B24D7/12 ,  G01B11/06 ,  H01L21/304 ,  H01L21/66 ,  B24B37/04

公开(公告)号：IE960846A1

公开(公告)日：1997-09-24

申请号：IE960846

申请日：1996-12-02

Applicant: IBM

Inventor： ANDRICACOS PANAYOTIS CONSTANTI ,  DATTA MADAV ,  DELIGIANNI HARIKLIA ,  HORKANS WILMA JEAN ,  KANG SUNG KWON ,  KWIETNIAK KEITH THOMAS ,  MATHAD GANGADHARA SWAMI ,  PURUSHOTHAMAN SAMPATH ,  SHI LEATHEN ,  TONG HO-MING

IPC: B23K35/26 ,  B23K35/00 ,  B32B15/01 ,  C22C13/00 ,  C22C13/02 ,  H01L21/60 ,  H01L23/485 ,  H01L23/488

Abstract: An interconnection structure suitable for the connection of microelectronic circuit chips to packages is provided by this invention. In particular, the invention pertains to the area-array or flip-chip technology often called C4 (controlled collapse chip connection). The structure comprises an adhesion/barrier layer deposited on a passivated substrate (e.g., a silicon wafer), optionally an additional adhesion layer, a solderable layer of a metal selected from the group consisting of Ni, Co, Fe, NiFe, NiCo, CoFe, and NiCoFe on the adhesion/barrier layer, and lead free solder ball comprising tin as the predominate component and one or more alloying elements selected from Bi, Ag, and Sb, and further optionally including one or more elements selected from the group consisting of Zn, In, Ni, Co and Cu.

公开(公告)号：ES2165902T3

公开(公告)日：2002-04-01

申请号：ES95480062

申请日：1995-05-19

Applicant: IBM

Inventor： ATKINSON NYE HENRI III ,  ROEDER JEFFREY FREDERICK ,  TONG HO-MING ,  TOTTA PAUL ANTHONY

IPC: H01L21/60 ,  H01L23/485 ,  H05K3/34 ,  H01L23/532 ,  H01L23/482 ,  H01L23/488 ,  H01L23/492 ,  H01L23/498

Abstract: An process and a structure for an improved solder terminal is disclosed. The improved solder terminal is made of a bottom metallic adhesion layer, a CrCu intermediate layer on top of the adhesion layer, a solder bonding layer above the CrCu layer and a solder top layer. The adhesion layer is either TiW or TiN. A process for fabricating an improved terminal metal consists of depositing an adhesive metallic layer, a layer of CrCu over the adhesive layer and a layer of solder bonding material, over which a solder layer is formed in selective regions and the underlying layers are etched using solder regions as a mask.

公开(公告)号：AT209397T

公开(公告)日：2001-12-15

申请号：AT95480062

申请日：1995-05-19

Applicant: IBM

Inventor： ATKINSON NYE HENRI III ,  ROEDER JEFFREY FREDERICK ,  TONG HO-MING ,  TOTTA PAUL ANTHONY

IPC: H05K3/34 ,  H01L21/60 ,  H01L23/485 ,  H01L23/532 ,  H01L23/482 ,  H01L23/488 ,  H01L23/492 ,  H01L23/498

Abstract: An process and a structure for an improved solder terminal is disclosed. The improved solder terminal is made of a bottom metallic adhesion layer, a CrCu intermediate layer on top of the adhesion layer, a solder bonding layer above the CrCu layer and a solder top layer. The adhesion layer is either TiW or TiN. A process for fabricating an improved terminal metal consists of depositing an adhesive metallic layer, a layer of CrCu over the adhesive layer and a layer of solder bonding material, over which a solder layer is formed in selective regions and the underlying layers are etched using solder regions as a mask.

公开(公告)号：DE69410772T2

公开(公告)日：1999-02-25

申请号：DE69410772

申请日：1994-11-24

Applicant: IBM

Inventor： LUSTIG NAFTALI ELIAHU ,  SAENGER KATHERINE LYNN ,  TONG HO-MING

IPC: G01N21/55 ,  B24B37/013 ,  B24B49/04 ,  B24B49/12 ,  B24D7/12 ,  G01B11/06 ,  H01L21/304 ,  H01L21/66 ,  B24B37/04

公开(公告)号：BR9502623A

公开(公告)日：1997-08-26

申请号：BR9502623

申请日：1995-05-31

Applicant: IBM

Inventor： NYE HENRY ATKINSON III ,  ROEDER JEFFREY FREDERICK ,  TONG HO-MING ,  TOTTA PAUL ANTHONY

IPC: H05K3/34 ,  H01L21/60 ,  H01L23/485 ,  H01L21/443

Abstract: An process and a structure for an improved solder terminal is disclosed. The improved solder terminal is made of a bottom metallic adhesion layer, a CrCu intermediate layer on top of the adhesion layer, a solder bonding layer above the CrCu layer and a solder top layer. The adhesion layer is either TiW or TiN. A process for fabricating an improved terminal metal consists of depositing an adhesive metallic layer, a layer of CrCu over the adhesive layer and a layer of solder bonding material, over which a solder layer is formed in selective regions and the underlying layers are etched using solder regions as a mask.

公开(公告)号：DE69018806D1

公开(公告)日：1995-05-24

申请号：DE69018806

申请日：1990-12-13

Applicant: IBM

Inventor： MOK LAWRENCE S ,  SCHWALL ROBERT E ,  TONG HO-MING

IPC: H01L23/36 ,  H01L23/14 ,  H01L23/16 ,  H01L23/367 ,  H01L23/42