公开(公告)号：GB2487870A

公开(公告)日：2012-08-08

申请号：GB201207819

申请日：2010-10-05

Applicant: IBM

Inventor： YIN HAIZHOU ,  WANG XINHUI ,  CHAN KEVIN K ,  REN ZHIBIN

IPC: H01L21/265 ,  H01L29/66 ,  H01L29/78

Abstract: The present invention provides a method of forming asymmetric field-effect-transistors. The method includes forming a gate structure on top of a semiconductor substrate, the gate structure including a gate stack and spacers adjacent to sidewalls of the gate stack, and having a first side and a second side opposite to the first side; performing angled ion-implantation from the first side of the gate structure in the substrate, thereby forming an ion-implanted region adjacent to the first side, wherein the gate structure prevents the angled ion-implantation from reaching the substrate adjacent to the second side of the gate structure; and performing epitaxial growth on the substrate at the first and second sides of the gate structure. As a result, epitaxial growth on the ion-implanted region is much slower than a region experiencing no ion-implantation. A source region formed to the second side of the gate structure by the epitaxial growth has a height higher than a drain region formed to the first side of the gate structure by the epitaxial growth. A semiconductor structure formed thereby is also provided.