Semiconductor etching
    12.
    发明专利

    公开(公告)号:GB2368314A

    公开(公告)日:2002-05-01

    申请号:GB0125657

    申请日:2001-10-25

    Abstract: A process for the localised etching of semiconductor surfaces comprises preparation of a surface, provision of an etching agent, provision of a device for supplying and aspirating the etching agent, the said device having two cylindrical tubes of different cross-sectional areas, the tube 2 of smaller cross-sectional area being coaxial in the cylindrical tube 3 of larger cross-sectional area, supplying the etching agent through the inner tube 2 to the region of the semiconductor wafer to be etched, and aspiration of the etching agent spreading over the region of the surface to be etched, through the outer tube 3. The cross-sectional area of the outer tube 3 is in this connection smaller than or equal to the area of the region of the surface to be etched.

    13.
    发明专利
    未知

    公开(公告)号:DE10140757A1

    公开(公告)日:2003-03-13

    申请号:DE10140757

    申请日:2001-08-20

    Abstract: Signal transit times on printed circuit boards which are equipped with all the passive components but without any active components can be determined using automatic standard test equipment composed of a standard test unit and a performance board with fittings attached thereto. In that first, using a standard routine of the test unit, a transit time is measured on the performance board from the CIF connector as far as the fitting, then a printed circuit board is plugged into the fitting location determined for it and then the sum transit time of the CIF connector is measured as far as the landing pad on the printed circuit board. By forming differences between the two measured values, the transit times on a printed circuit board can be measured with a high degree of precision with the automatic standard test equipment used in standard module testing technology.

    16.
    发明专利
    未知

    公开(公告)号:DE10053198A1

    公开(公告)日:2002-05-16

    申请号:DE10053198

    申请日:2000-10-26

    Abstract: A method is described for local etching of surfaces. The method includes the steps of providing a surface, providing an etchant, and providing a device for supplying and extracting the etchant. The device contains two cylindrical lines of different cross-sectional areas, of which the cylindrical line with the smaller cross-sectional area is guided inside the cylindrical line with the larger cross-sectional area. An etchant is fed through the inner line to the region of the semiconductor wafer that is to be etched, and the etchant that spreads out beyond the region of the surface that is to be etched is extracted through the outer line. The cross-sectional area of the outer line is less than or equal to the area of the region of the surface which is to be etched.

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