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    SELF ALIGNED TRENCH AND METHOD OF FORMING THE SAME
    11.
    发明申请
    SELF ALIGNED TRENCH AND METHOD OF FORMING THE SAME 审中-公开
    自定义沟槽和形成它的方法

    公开(公告)号：WO0225730A3

    公开(公告)日：2002-10-24

    申请号：PCT/US0142263

    申请日：2001-09-24

    Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

    Inventor： KUNKEL GERHARD ,  BUTT SHAHID ,  DIVAKARUNI RAMACHANDRAN ,  REITH ARMIN M ,  NAEEM MUNIR D

    IPC: H01L21/8242

    CPC classification number: H01L27/10864 ,  H01L27/1087 ,  H01L27/10891

    Abstract: A method of forming a trench can be used in the fabrication of dynamic random access memory (DRAM) cells. In one aspect, a first layer of a first material (e.g., polysilicon) (104) is formed over a semiconductor region (e.g., a silicon substrate) (100). The first layer is patterned to remove portions of the first material. A second material (e.g., oxide) (112, 120) can then be deposited to fill the portions where the first material was removed. After removing the remaining portions of the first layer of first material, a trench (122) can be etched in the semiconductor region. The trench would be substantially aligned to the second material.

    Abstract translation: 可以在制造动态随机存取存储器（DRAM）单元中使用形成沟槽的方法。 在一个方面，第一材料（例如，多晶硅）（104）的第一层形成在半导体区域（例如，硅衬底）（100）之上。 第一层被图案化以去除第一材料的一部分。 然后可以沉积第二材料（例如氧化物）（112,120）以填充第一材料被去除的部分。 在去除第一层第一材料的剩余部分之后，可以在半导体区中蚀刻沟槽（122）。 沟槽将基本上与第二材料对齐。

    DESIGN OF PHOTOMASKS FOR SEMICONDUCTOR DEVICE FABRICATION
    12.
    发明申请
    DESIGN OF PHOTOMASKS FOR SEMICONDUCTOR DEVICE FABRICATION 审中-公开
    用于半导体器件制造的光电子设计

    公开(公告)号：WO0142996A3

    公开(公告)日：2002-02-14

    申请号：PCT/US0033146

    申请日：2000-12-06

    Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

    Inventor： MANSFIELD SCOTT M ,  LIEBMANN LARS W ,  BUTT SHAHID ,  HAFFNER HENNING

    IPC: G03F1/00 ,  G03F1/36 ,  G03F7/20 ,  G06F17/50

    CPC classification number: G03F1/36 ,  G03F7/70441

    Abstract: A semiconductor device can be fabricated using a photomask that has been modified using an assist feature design method based on normalized feature spacing. Before the device can be fabricated, a layout of original shapes is designed (402). For at least some of the original shapes, the width of the shape and a distance to at least one neighboring shape are measured (404). A modified shape can then be generated by moving edges of the original shape based on the width and distance measurements (406). This modification can be performed on some or all of the original shapes (408). For each of the modified shapes, a normalized space and correct number of assist features can be computed (410). The layout is then modified by adding the correct number of assist features in a space between the modified shape and the neighboring shape (412). This modified layout can then be used in producing a photomask, which can in turn be used to produce a semiconductor device.

    Abstract translation: 可以使用已经使用基于归一化特征间隔的辅助特征设计方法修改的光掩模来制造半导体器件。 在可以制造设备之前，设计原始形状的布局（402）。 对于至少一些原始形状，测量形状的宽度和至少一个相邻形状的距离（404）。 然后可以通过基于宽度和距离测量来移动原始形状的边缘来生成修改的形状（406）。 可以对部分或全部原始形状执行该修改（408）。 对于每个修改的形状，可以计算归一化空间和正确数量的辅助特征（410）。 然后通过在修改的形状和相邻形状之间的空间中添加正确数量的辅助特征来修改布局（412）。 然后，该修改后的布局可用于制造光掩模，光掩模又可用于制造半导体器件。

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