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    SEMICONDUCTOR COMPONENT AND METHODS FOR PRODUCING A SEMICONDUCTOR COMPONENT
    11.
    发明申请
    SEMICONDUCTOR COMPONENT AND METHODS FOR PRODUCING A SEMICONDUCTOR COMPONENT 有权
    半导体元件的制造方法和半导体元件的制造方法

    公开(公告)号：US20140141608A1

    公开(公告)日：2014-05-22

    申请号：US14166090

    申请日：2014-01-28

    Applicant: Infineon Technologies AG

    Inventor： Andreas Meiser ,  Walter Hartner ,  Hermann Gruber ,  Dietrich Bonart ,  Thomas Gross

    IPC: H01L21/768

    CPC classification number: H01L21/76802 ,  H01L21/76286 ,  H01L21/76877 ,  H01L21/84 ,  H01L27/1203

    Abstract: A method for producing a semiconductor component with a semiconductor body includes providing a substrate of a first conductivity type. A buried semiconductor layer of a second conductivity type is provided on the substrate. A functional unit semiconductor layer is provided on the buried semiconductor layer. At least one trench, which reaches into the substrate, is formed in the semiconductor body. An insulating layer is formed, which covers inner walls of the trench and electrically insulates the trench interior from the functional unit semiconductor layer and the buried semiconductor layer, the insulating layer having at least one opening in the region of the trench bottom. The at least one trench is filled with an electrically conductive semiconductor material of the first conductivity type, wherein the electrically conductive semiconductor material forms an electrical contact from a surface of the semiconductor body to the substrate.

    Abstract translation: 一种制造具有半导体本体的半导体部件的方法，包括提供第一导电型的基板。 在基板上设置第二导电类型的掩埋半导体层。 功能单元半导体层设置在掩埋半导体层上。 至少一个到达衬底的沟槽形成在半导体本体中。 形成绝缘层，其覆盖沟槽的内壁，并使沟槽内部与功能单元半导体层和埋入半导体层电绝缘，绝缘层在沟槽底部的区域中具有至少一个开口。 所述至少一个沟槽填充有第一导电类型的导电半导体材料，其中所述导电半导体材料形成从所述半导体主体的表面到所述衬底的电接触。

    Semiconductor device having a through contact
    15.
    发明授权
    Semiconductor device having a through contact 有权
    具有通孔的半导体器件

    公开(公告)号：US08941217B2

    公开(公告)日：2015-01-27

    申请号：US14249642

    申请日：2014-04-10

    Applicant: Infineon Technologies AG

    Inventor： Hermann Gruber ,  Thomas Gross ,  Andreas Peter Meiser ,  Markus Zundel

    IPC: H01L29/40 ,  H01L23/48

    CPC classification number: H01L23/481 ,  H01L21/6835 ,  H01L21/76224 ,  H01L21/76898 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A semiconductor device includes a semiconductor substrate having a first side and a second side opposite the first side, an active area and a through contact area, the active area including a transistor structure having a control electrode, the through contact area including a semiconductor mesa having insulated sidewalls. The semiconductor device further includes a first metallization on the first side in the active area and a recess extending from the first side into the semiconductor substrate and between the active area and the through contact area and including in the through contact area a horizontally widening portion, the recess being at least partly filled with a conductive material forming a first conductive region in ohmic contact with the semiconductor mesa and the transistor structure. The semiconductor device also includes a control metallization on the second side and in ohmic contact with the semiconductor mesa.

    Abstract translation: 半导体器件包括具有第一侧和与第一侧相对的第二侧的半导体衬底，有源区和贯通接触区，所述有源区包括具有控制电极的晶体管结构，所述贯通接触区包括半导体台面，所述半导体衬底具有 绝缘侧壁。 所述半导体器件还包括在所述有源区域中的第一侧上的第一金属化和从所述第一侧延伸到所述半导体衬底中以及在所述有源区域和所述贯穿接触区域之间并且在所述贯穿接触区域中包括水平扩大部分的凹部， 所述凹部至少部分地填充有形成与所述半导体台面和所述晶体管结构欧姆接触的第一导电区域的导电材料。 半导体器件还包括在第二侧上的控制金属化并与半导体台面欧姆接触。

    METHODS FOR PRODUCING POLYSILICON RESISTORS
    20.
    发明申请
    METHODS FOR PRODUCING POLYSILICON RESISTORS 有权
    生产多晶硅电阻的方法

    公开(公告)号：US20150099341A1

    公开(公告)日：2015-04-09

    申请号：US14048173

    申请日：2013-10-08

    Applicant: Infineon Technologies AG

    Inventor： Hermann Gruber ,  Thomas Gross ,  Werner Irlbacher ,  Markus Zundel ,  Mathias von Borcke ,  Hans Joachim Schulze

    IPC: H01L49/02

    CPC classification number: H01L28/20 ,  G01K7/186 ,  H01L21/266 ,  H01L27/0802

    Abstract: A method for producing a polysilicon resistor device may include: forming a polysilicon layer; implanting first dopant atoms into at least a portion of the polysilicon layer, wherein the first dopant atoms include deep energy level donors; implanting second dopant atoms into said at least a portion of said polysilicon layer; and annealing said at least a portion of said polysilicon layer.

    Abstract translation: 多晶硅电阻器件的制造方法可以包括：形成多晶硅层; 将第一掺杂剂原子注入到所述多晶硅层的至少一部分中，其中所述第一掺杂剂原子包括深能级供体; 将第二掺杂剂原子注入到所述多晶硅层的所述至少一部分中; 并退火所述多晶硅层的至少一部分。

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