公开(公告)号：JP2010107932A

公开(公告)日：2010-05-13

申请号：JP2009013645

申请日：2009-01-23

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： TANAKA MASATO ,  KONNO KEIJI ,  YAMAGUCHI KEIICHI

IPC: G03F7/11 ,  C09D5/25 ,  C09D7/12 ,  C09D183/04 ,  G03F7/26 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a composition for forming a silicon-containing film for a multilayer resist process, which is excellent in storage stability while preventing an increase of foreign substances generated in the composition due to deterioration with age, and which forms a silicon-containing film excellent in adhesion to a resist film and in reproducibility of a resist pattern and having adequate resistance to a developer and to oxygen ashing in resist removal. SOLUTION: The composition for forming a silicon-containing film for a multilayer resist process includes a polysiloxane (A) and an organic solvent (B), wherein the organic solvent (B) includes 1-50 mass% of an alcoholic organic solvent (B1) and 1-30 mass% of an organic solvent (B2) represented by formula (2) (wherein m denotes an integer of 1-3), provided that the total amount of the organic solvent (B) is considered to be 100 mass%. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 解决的问题：提供一种用于形成多层抗蚀剂工艺的含硅膜的组合物，其具有优异的储存稳定性，同时防止由于老化而劣化而在组合物中产生的异物的增加，以及哪些 形成了与抗蚀剂膜的粘合性优异且抗蚀剂图案的再现性和对显影剂具有足够的抗性以及抗蚀剂去除中的氧灰化的含硅膜。 ＆lt; P＆gt;解决方案：用于形成多层抗蚀剂工艺的含硅膜的组合物包括聚硅氧烷（A）和有机溶剂（B），其中有机溶剂（B）包括1-50质量％的醇有机 溶剂（B1）和1-30质量％的由式（2）表示的有机溶剂（B2）（其中m表示1-3的整数），条件是有机溶剂（B）的总量被认为是 为100质量％。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010090248A

公开(公告)日：2010-04-22

申请号：JP2008260919

申请日：2008-10-07

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： MORI TAKASHI ,  TANAKA MASATO ,  KONNO KEIJI

IPC: C08L83/14 ,  C08L83/04 ,  H01L21/312

Abstract: PROBLEM TO BE SOLVED: To provide a composition for forming a silicon-containing film for a multilayer resist process, which forms a silicon-containing film having a small amount of a permeated resist material and stably forms a resist pattern having no trailing, etc., and also to provide a silicon-containing film and a method for forming a pattern. SOLUTION: The composition for forming the silicon-containing film comprises a polymer (A) derived from a compound (a1) represented by general formula (1) (wherein R 1 s are each independently 1-4C alkyl), a compound (a2) represented by general formula (2) (wherein R 2 is a monofunctional organic group), and a compound (a3) represented by general formula (3) (wherein R 3 is a hydrogen atom, a fluorine atom, or a monofunctional organic group; and each R 4 is a monofunctional organic group), and a solvent (B). COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于形成多层抗蚀剂工艺的含硅膜的组合物，其形成具有少量渗透抗蚀剂材料的含硅膜，并且稳定地形成不具有尾部的抗蚀剂图案 等，并且还提供含硅膜和形成图案的方法。 解决方案：用于形成含硅膜的组合物包含衍生自由通式（1）表示的化合物（a1）的聚合物（A）（其中R 1 各自独立地为1 -4C烷基），由通式（2）表示的化合物（a2）（其中R 2 是单官能有机基团）和由通式（3）表示的化合物（a3）（其中 R 3为氢原子，氟原子或单官能有机基团，各R 4为单官能有机基团）和溶剂（B）。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010020109A

公开(公告)日：2010-01-28

申请号：JP2008180658

申请日：2008-07-10

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： TANAKA MASATO ,  KONNO KEIJI

IPC: G03F7/40 ,  C08F299/08 ,  C08G77/20 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a resin composition for pattern reverse, which can be suitably embedded in resist patterns without mixing with the resist patterns formed on a substrate, shows excellent adhesion property with the patterns, and is excellent durability against oxygen ashing and storage stability; and to provide a method for forming a reversed pattern.
SOLUTION: The resin composition for pattern reverse is used for a method for forming a reversed pattern comprising: a step of forming a resist pattern on a substrate to be processed; a step of embedding a resin composition for pattern reverse between the patterns of the resist patterns; and a step of removing the resist patterns to form reversed patterns, and contains polysiloxane containing a constitutional unit having a specific acryloyloxy alkyl group, and an organic solvent.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：为了提供可以适当地嵌入抗蚀剂图案而不与形成在基材上的抗蚀剂图案混合的图案反转用树脂组合物，显示出与图案的优异的粘合性，并且对氧的耐久性优异 灰化和储存稳定性; 并提供形成反转图案的方法。 解决方案：用于图案反转的树脂组合物用于形成反转图案的方法，包括：在待加工的基材上形成抗蚀剂图案的步骤; 在抗蚀剂图案的图案之间嵌入图案相反的树脂组合物的步骤; 以及去除抗蚀剂图案以形成反向图案的步骤，并且包含含有具有特定丙烯酰氧基烷基的结构单元的聚硅氧烷和有机溶剂。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2009229708A

公开(公告)日：2009-10-08

申请号：JP2008073765

申请日：2008-03-21

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： TANAKA MASATO ,  KONNO KEIJI

IPC: G03F7/11 ,  C08G77/04 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a composition for a resist underlayer film, the composition having excellent adhesion to a resist film, improving reproducibility in a resist pattern, having resistance to an alkaline solution used for development or the like and to oxygen ashing at the resist removal, and having excellent storage stability, wherein the resist underlayer film into which the resist material is less likely to soak can be formed. SOLUTION: The composition for the resist underlayer film includes: a polysiloxane containing a constituent unit expressed by the general formula (1); and a solvent, wherein X is an optionally substituted methylene group or an optionally substituted and linear or branched 2-5C alkylene group. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：为了提供一种抗蚀剂下层膜的组合物，该组合物对抗蚀剂膜具有优异的粘附性，提高了抗蚀剂图案的再现性，对显影等所用的碱性溶液具有耐受性和氧气 可以形成抗蚀剂去除时的灰化，并且具有优异的储存稳定性，其中可以形成抗蚀剂材料难以浸泡的抗蚀剂下层膜。 ＆lt; P＆gt;解决方案：抗蚀剂下层膜的组合物包括：含有由通式（1）表示的结构单元的聚硅氧烷; 和溶剂，其中X是任选取代的亚甲基或任选取代的和直链或支链的2-5C亚烷基。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2005241963A

公开(公告)日：2005-09-08

申请号：JP2004051548

申请日：2004-02-26

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： KONNO KEIJI ,  NOMURA NAKAATSU ,  SUGITA HIKARI ,  TANAKA MASATO ,  SHIMOKAWA TSUTOMU

IPC: G03F7/11 ,  G03F7/004 ,  H01L21/027

CPC classification number: B82Y30/00 ,  B82Y20/00

Abstract: PROBLEM TO BE SOLVED: To provide a composition for forming an antireflection film from which a resist pattern having excellent dry etching durability, a high antireflection effect and excellent resolution and accuracy without causing intermixing can be formed, and to provide an antireflection film formed by using the above composition. SOLUTION: The composition for forming an antireflection film contains a polymer obtained from at least one kind of compound expressed by formula (3) or formula (4) and at least one kind of fullerene compound selected from a group (B) consisting of fullerenes and fullerene derivatives. In formulae, R 1 independently represents a hydrogen atom, a fluorine atom or a monovalent group; R 4 represents a halogen atom or a monovalent group; and each of R 5 , R 6 and R 7 independently represents a hydrogen atom, a halogen atom or a monovalent group. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 解决问题：提供一种抗反射膜的组合物，可以形成具有优异的耐蚀刻耐久性，高抗反射效果和优异的分辨率和精度的抗蚀剂图案，而不会产生混合，并且可以形成抗反射膜 通过使用上述组合物形成。 解决方案：用于形成抗反射膜的组合物含有由式（3）或式（4）表示的至少一种化合物和至少一种选自（B）的富勒烯化合物中的至少一种 的富勒烯和富勒烯衍生物。 在式中，R“1”独立地表示氢原子，氟原子或一价基团; R 4 表示卤素原子或一价基团; R SP 5，R SP 6，R SP 7，R SP 7各自独立地表示氢原子，卤素原子或一价基团。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2002296789A

公开(公告)日：2002-10-09

申请号：JP2001097348

申请日：2001-03-29

Applicant: JSR CORP

Inventor： KAWAGUCHI KAZUO ,  TANAKA MASATO ,  SHIMOKAWA TSUTOMU

IPC: G03F7/11 ,  C08F32/08 ,  C08F299/02 ,  C08G10/00 ,  C08K5/00 ,  C08L45/00 ,  C08L61/18 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a composition for forming the laser layer film for a multilayered resist process which has excellent durability against RIE and which can be used as a sufficient thin film to form a high definition pattern. SOLUTION: The composition for forming the lower layer film for a multilayered resist process contains polymers having structural units expressed by (1) and a solvent. In formula (1), R is a univalent atom or group, n is an integer 0 to 4 and each of R and R is a univalent atom or group.

公开(公告)号：JP2002207296A

公开(公告)日：2002-07-26

申请号：JP2001341741

申请日：2001-11-07

Applicant: JSR CORP

Inventor： KONNO KEIJI ,  KAWAGUCHI KAZUO ,  TANAKA MASATO ,  KOBAYASHI YASUTAKA ,  HAYASHI AKIHIRO ,  SUGITA HIKARI ,  HASHIGUCHI YUICHI

IPC: G03F7/11 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a composition for a resist lower layer film having preferable gas permeability, excellent adhesiveness with a resist film and excellent durability against a developer for the development of the resist film and to provide a method for manufacturing the composition, the resist lower layer film and a method for manufacturing the film. SOLUTION: The composition for a resist lower layer film contains a film forming component consisting of a specified silane compound and a hydrolyzed product and/or condensed product of anther specified silane compound containing heat decomposable organic groups. When the composition is heated, the film forming component is hardened while the heat decomposable organic groups produce gas to form a porous silica film. The decomposition temperature of the heat decomposable organic groups is preferably 200 to 400 deg.C. The density of the resist lower film to be formed is preferably 0.7 to 1.8 g/cm3. The resist lower film is formed by heating the thin film of the above composition at a temperature equal to or higher than the decomposition temperature of the heat decomposable organic groups.

公开(公告)号：JP2010160455A

公开(公告)日：2010-07-22

申请号：JP2009013648

申请日：2009-01-23

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： TANAKA MASATO ,  KAWAZU TOMOHARU ,  MORI TAKASHI ,  TAKANASHI KAZUNORI ,  FUJIWARA KOICHI

IPC: G03F7/11 ,  G03F7/26 ,  G03F7/40 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a composition for forming a silicon-containing film for a multilayer resist process which is excellent in storage stability, can form a silicon-containing film having a high Si content and a small permeation amount of a resist material, and can stably form a resist pattern having a superior bottom profile without causing trailing or the like, and to provide a silicon-containing film and a pattern forming method.
SOLUTION: The composition for forming a silicon-containing film contains (A) a polysiloxane having a silanole group, (B) an oxetanyl group-containing compound having two or more oxetanyl groups, and (C) an organic solvent.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 待解决的问题：为了提供一种用于形成具有优异的储存稳定性的多层抗蚀剂工艺的含硅膜的组合物，可以形成具有高Si含量和少量渗透量的含硅膜 并且可以稳定地形成具有优异的底部轮廓而不引起拖尾等的抗蚀剂图案，并且提供含硅膜和图案形成方法。 解决方案：用于形成含硅膜的组合物含有（A）具有硅烷醇基的聚硅氧烷，（B）具有两个以上氧杂环丁烷基的含氧杂环丁烷基的化合物和（C）有机溶剂。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010152292A

公开(公告)日：2010-07-08

申请号：JP2009013647

申请日：2009-01-23

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： TANAKA MASATO ,  KONNO KEIJI ,  MORI TAKASHI ,  KAWAZU TOMOHARU

IPC: G03F7/11 ,  C08G77/60 ,  C08L83/14 ,  G03F7/26 ,  G03F7/40 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To enable the forming of film containing silicon superior in storage stability with a large content of Si and small amount of permeation of resist material, and to provide a composition for forming film with silicon contained therein for use in multilayer resist processing which can steadily form resist patterns free from trailed hems and the like, film containing silicon and method of forming patterns.
SOLUTION: The composition for forming film with silicon contained therein includes: (A) a structural unit (a1) derived from tetra alkoxysilane provenance and a structural unit (a2) derived from hexa alkoxy disilane provenance while in the case of the content ratio of the structural unit (a1) is made 100 mol%, polysiloxane whose content ratio (a2) of the structural unit (a2) is 10 to 30 mol%, and (B) organic solvent.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：为了能够以大量的Si和抗蚀剂材料的渗透量形成具有优异的储存稳定性的膜，并且提供用于形成其中含有硅的膜的组合物，其用于 可以稳定地形成不含痕迹等的抗蚀剂图案，含有硅的膜和形成图案的方法的多层抗蚀剂处理。 ＆lt; P＆gt;解决方案：用于形成含硅的膜的组合物包括：（A）衍生自四烷氧基硅烷原料的结构单元（a1）和衍生自六烷氧基乙硅烷原料的结构单元（a2），而在含量 结构单元（a1）的比例为100摩尔％，结构单元（a2）的含量比（a2）为10〜30摩尔％的聚硅氧烷，（B）有机溶剂。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010113328A

公开(公告)日：2010-05-20

申请号：JP2009013646

申请日：2009-01-23

Applicant: Jsr Corp ,  Jsr株式会社

Inventor： TANAKA MASATO ,  KONNO KEIJI ,  MORI TAKASHI ,  KAWAZU TOMOHARU

IPC: G03F7/11 ,  C08G77/04 ,  G03F7/004 ,  G03F7/075 ,  G03F7/26 ,  G03F7/40 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a composition for forming a silicon-containing film for a multilayer resist process, which is excellent in storage stability and achieves formation of a silicon-containing film excellent in adhesion to a resist film and in reproducibility of a resist pattern, having adequate resistance to a developer used for development, and also having adequate masking property to oxygen ashing in resist removal (etching resistance). SOLUTION: The composition comprises a polysiloxane derived from 30-80 pts.mass of a compound (a1) of formula (1), 5-60 pts.mass of a compound (a2) of formula (2), and 5-50 pts.mass of at least one of a compound (a3) of formula (3) and a compound (a4) of formula (4), provided that the sum total of the compounds (a1) to (a4) is 100 pts.mass; and a solvent. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于形成多层抗蚀剂工艺的含硅膜的组合物，其具有优异的储存稳定性并且实现了与抗蚀剂膜的粘附性和再现性优异的含硅膜的形成 抗蚀剂图案具有足够的抗显影剂用于显影的抗蚀剂图案，并且还具有对抗蚀剂去除中的氧灰化（耐蚀刻性）的足够的掩蔽性。 溶液：组合物包含衍生自30-80分钟的式（1）化合物（a1），5-60磅/平方米的式（2）化合物（a2）的聚硅氧烷和5 -50质量份的式（3）的化合物（a3）和式（4）的化合物（a4）中的至少一种，条件是化合物（a1）〜（a4）的总和为100重量份 .mass; 和溶剂。 版权所有（C）2010，JPO＆INPIT