公开(公告)号：WO2009140274A2

公开(公告)日：2009-11-19

申请号：PCT/US2009043623

申请日：2009-05-12

Applicant: KEMET ELECTRONICS CORP ,  FREEMAN YURI ,  LESSNER PHILIP M ,  POLTORAK JEFFREY ,  HUSSEY STEVEN C

Inventor： FREEMAN YURI ,  LESSNER PHILIP M ,  POLTORAK JEFFREY ,  HUSSEY STEVEN C

IPC: H01G4/005 ,  H01G4/228

CPC classification number: H01G9/052 ,  B22F7/08 ,  B22F2999/00 ,  H01G9/15 ,  Y10T29/417 ,  B22F3/10 ,  B22F2201/40 ,  B22F2207/17

Abstract: A method for treating anodes of refractory valve metals by deoxidizing the anodes using Mg in an oven, prior to sintering. The process limits free oxygen in the metal compact and improves performance of a capacitor, especially with regards to rated voltage.

Abstract translation: 在烧结之前，通过烘箱中的Mg使阳极脱氧来处理耐火阀金属的阳极的方法。 该工艺限制了金属结构中的游离氧，并改善了电容器的性能，特别是在额定电压方面。

公开(公告)号：WO2009079026A3

公开(公告)日：2009-11-05

申请号：PCT/US2008063830

申请日：2008-05-16

Applicant: KEMET ELECTRONICS CORP ,  CHEN QINGPING ,  BRENNEMAN KEITH R ,  MA YUHONG ,  QIU YONGJIAN ,  LESSNER PHILIP M ,  HAHN RANDY S

Inventor： CHEN QINGPING ,  BRENNEMAN KEITH R ,  MA YUHONG ,  QIU YONGJIAN ,  LESSNER PHILIP M ,  HAHN RANDY S

IPC: H01B1/12

CPC classification number: H01G9/0036 ,  H01G9/15

Abstract: A process for forming a capacitor. The process includes providing an anode; providing a dielectric on the anode; exposing the anode to a polymer precursor solution comprising monomer, conjugated oligomer and optionally solvent and polymerizing the polymer precursor. The ratio between monomer and conjugated oligomer ranges from 99.9/0.1 to 75/25 b y weight. The solvent content in the polymer precursor solution is from 0 to 99 % by weight.

Abstract translation: 形成电容器的过程。 该工艺包括提供阳极; 在阳极上提供电介质; 将阳极暴露于包含单体，共轭低聚物和任选溶剂的聚合物前体溶液中并使聚合物前体聚合。 单体与共轭低聚物之间的比例范围为99.9 / 0.1至75/25重量％。 聚合物前体溶液中的溶剂含量为0-99重量％。

公开(公告)号：WO2011150263A3

公开(公告)日：2012-02-23

申请号：PCT/US2011038216

申请日：2011-05-26

Applicant: KEMET ELECTRONICS CORP ,  CHACKO ANTONY P ,  MCCONNELL JOHN E ,  LESSNER PHILIP M ,  HAHN RANDOLPH S ,  BULTITUDE JOHN

Inventor： CHACKO ANTONY P ,  MCCONNELL JOHN E ,  LESSNER PHILIP M ,  HAHN RANDOLPH S ,  BULTITUDE JOHN

IPC: H01G9/04 ,  H01G9/012

CPC classification number: H01G9/012 ,  H01G9/0425 ,  H01G9/15 ,  Y02E60/13 ,  Y10T29/43

Abstract: A solid electrolytic capacitor with an anode and a dielectric on the anode. A cathode is on the dielectric and a conductive coating on said dielectric. A cathode lead is electrically connected to the conductive coating by an adhesive selected from the group consisting of a transient liquid phase sinterable material and polymer solder.

Abstract translation: 在阳极上具有阳极和电介质的固体电解电容器。 阴极位于电介质上，并在所述电介质上具有导电涂层。 阴极引线通过选自瞬态液相可烧结材料和聚合物焊料的粘合剂电连接到导电涂层。

公开(公告)号：WO2010123936A2

公开(公告)日：2010-10-28

申请号：PCT/US2010031801

申请日：2010-04-20

Applicant: KEMET ELECTRONICS CORP ,  FREEMAN YURI ,  QIU YONGJIAN ,  HUSSEY STEPHEN C ,  LESSNER PHILIP M

Inventor： FREEMAN YURI ,  QIU YONGJIAN ,  HUSSEY STEPHEN C ,  LESSNER PHILIP M

IPC: H01G4/008 ,  H01G4/018

CPC classification number: H01G9/15 ,  H01G9/012 ,  H01G9/028 ,  H01G9/052 ,  H01G9/10 ,  H01G11/48 ,  H01G11/56 ,  Y02E60/13 ,  Y10T29/417 ,  Y10T29/43

Abstract: A capacitor, and method of making a capacitor, is provided wherein the capacitor has exceptionally high break down voltage. The capacitor has a tantalum anode with an anode wire attached thereto. A dielectric film is on the tantalum anode. A conductive polymer is on the dielectric film. An anode lead is in electrical contact with the anode wire. A cathode lead is in electrical contact with the conductive polymer and the capacitor has a break down voltage of at least 60 V.

Abstract translation: 提供一种电容器和制造电容器的方法，其中电容器具有特别高的击穿电压。 电容器具有连接有阳极线的钽阳极。 电介质膜在钽阳极上。 导电聚合物在介电膜上。 阳极引线与阳极线电接触。 阴极引线与导电聚合物电接触，电容器具有至少60V的击穿电压。

公开(公告)号：WO2008131018A3

公开(公告)日：2008-12-18

申请号：PCT/US2008060503

申请日：2008-04-16

Applicant: KEMET ELECTRONICS CORP ,  QIU YONGJIAN ,  CHEN QINGPING ,  LESSNER PHILIP M ,  HAHN RANDY S ,  PRINCE CYNTHIA L ,  BRENNEMAN KEITH R

Inventor： QIU YONGJIAN ,  CHEN QINGPING ,  LESSNER PHILIP M ,  HAHN RANDY S ,  PRINCE CYNTHIA L ,  BRENNEMAN KEITH R

IPC: H01G9/028 ,  C08G61/12

CPC classification number: H01G9/0036 ,  H01G9/028 ,  H01G9/15 ,  H01G11/48 ,  H01G11/56 ,  H01G11/82 ,  Y02E60/13 ,  Y10T29/417

Abstract: A method for maintaining quality of monomer during a coating process for intrinsically conductive polymer which suppresses unwanted by-products. A neutralization process using a base or anion exchange resin is used batch-wise or continuous.

Abstract translation: 在本发明的聚合物的涂布过程中保持单体质量的方法，其抑制不需要的副产物。 使用碱或阴离子交换树脂的中和方法是分批使用或连续使用的。

公开(公告)号：CZ20011182A3

公开(公告)日：2001-10-17

申请号：CZ20011182

申请日：1999-09-29

Applicant: KEMET ELECTRONICS CORP

Inventor： HAHN RANDOLPH S ,  LESSNER PHILIP M ,  RAJASEKARAN VEERIYA

IPC: H01G9/028 ,  H01G9/00 ,  H01G9/02 ,  H01G9/025 ,  H01G9/042

Abstract: The adhesion of a conductive polymer film to an oxidized porous pellet anode is improved by the incorporation of a silane coupling agent in the polymer impregnating solution. The incorporation of the silane coupling agent also decreases leakage current and dissipation factor. Suitable silanes are those of the general formula (R1-R3)-Si-(OR2)3. Each of R2 and R3 is a C1-C6 alkyl group such as methyl, ethyl, or propyl. R1 can be chosen from a wide variety of organic functional groups such as epoxy, glycidoxy, amino, and pyrrole. The most preferred silane is 3-glycidoxypropyltrimethoxysilane.

公开(公告)号：CZ20010785A3

公开(公告)日：2001-08-15

申请号：CZ20010785

申请日：1999-07-02

Applicant: KEMET ELECTRONICS CORP

Inventor： LESSNER PHILIP M ,  SU TSUNG-YUAN ,  RAJASEKARAN VEERIYA ,  HAHN RANDOLPH S

IPC: C08G61/12 ,  H01B1/12 ,  H01G9/028 ,  H01G9/02

CPC classification number: H01B1/127 ,  H01G11/48 ,  H01G11/56 ,  Y02E60/13

公开(公告)号：CZ9804362A3

公开(公告)日：1999-07-14

申请号：CZ436298

申请日：1998-12-29

Applicant: KEMET ELECTRONICS CORP

Inventor： LESSNER PHILIP M ,  KINARD JOHN T ,  MELODY BRIAN J

IPC: C08G73/20 ,  C08F4/26 ,  C08F4/40 ,  C08G61/12 ,  H01B1/12 ,  H01G9/02 ,  H01G9/025

CPC classification number: H01G9/025 ,  C08G61/124 ,  H01B1/127 ,  H01G11/48 ,  H01G11/56 ,  Y02E60/13

公开(公告)号：DE112013004358T5

公开(公告)日：2015-05-13

申请号：DE112013004358

申请日：2013-09-04

Applicant: KEMET ELECTRONICS CORP

Inventor： HUSSEY STEVEN C ,  FREEMAN YURI ,  LESSNER PHILIP M ,  CHEN QINGPING ,  QAZI JAVAID

IPC: H01G9/15

Abstract: Verfahren zur Bereitstellung eines verbesserten hermetisch versiegelten Kondensators enthält die folgenden Schritte: Aufbringen eines Lötmittels und eines Flussmittels an einer Innenfläche eines Gehäuses; Aufschmelzen des Lötmittels auf der Innenfläche; Entfernen des Flussmittels, wodurch ein flussmittelarmes Lötmittel gebildet wird; Einsetzen eines Kondensatorelements in das Gehäuse; Wiederaufschmelzen des flussmittelarmen Lötmittels, wodurch eine Lötverbindung zwischen dem Gehäuse und der lötbaren Schicht gebildet wird; und Versiegeln des Gehäuses.

公开(公告)号：DE69821181D1

公开(公告)日：2004-02-26

申请号：DE69821181

申请日：1998-09-18

Applicant: KEMET ELECTRONICS CORP

Inventor： KINARD JOHN T ,  MELODY BRIAN J ,  LESSNER PHILIP M

IPC: C25D11/02 ,  C25D11/06 ,  C25D11/26 ,  H01G9/00 ,  H01G9/04

Abstract: An electrolytic solution comprising glycerine and dibasic potassium phosphate. The electrolytic solution has a water content of less than 1000 ppm and is prepared by mixing the glycerine and the dibasic potassium phosphate and then heating to about 150 to 180°C for about 1 to 12 hours. A method of anodizing a metal comprising forming a film on the metal with an electrolytic solution comprising glycerine and dibasic potassium phosphate. The metal is preferably a valve metal, such as tantalum, and the film is formed at a temperature of 150°C or higher.