公开(公告)号：EP2694983A1

公开(公告)日：2014-02-12

申请号：EP12768608.7

申请日：2012-04-04

Applicant: KLA-Tencor Corporation

Inventor： KANDEL, Daniel ,  COHEN, Guy ,  KLEIN, Dana ,  LEVINSKI, Vladimir ,  SAPIENS, Noam ,  SHULMAN, Alex ,  KAMENETSKY, Vladimir ,  AMIT, Eran ,  VAKSHTEIN, Irina

IPC: G01N37/00

CPC classification number: G03F7/70633 ,  G01N2223/6116 ,  G03F1/48 ,  G03F7/70616

Abstract: The present invention may include acquiring a plurality of overlay metrology measurement signals from a plurality of metrology targets distributed across one or more fields of a wafer of a lot of wafers, determining a plurality of overlay estimates for each of the plurality of overlay metrology measurement signals using a plurality of overlay algorithms, generating a plurality of overlay estimate distributions, and generating a first plurality of quality metrics utilizing the generated plurality of overlay estimate distributions, wherein each quality metric corresponds with one overlay estimate distribution of the generated plurality of overlay estimate distributions, each quality metric a function of a width of a corresponding generated overlay estimate distribution, each quality metric further being a function of asymmetry present in an overlay metrology measurement signal from an associated metrology target.

公开(公告)号：WO2019182637A1

公开(公告)日：2019-09-26

申请号：PCT/US2018/049295

申请日：2018-09-03

Applicant: KLA-TENCOR CORPORATION

Inventor： LAMHOT, Yuval ,  AMIT, Eran ,  PELED, Einat ,  SELLA, Noga ,  CHENG, Wei-Te Aaron

IPC: G03F7/20

Abstract: A method of determining OVL in a pattern in a semiconductor wafer manufacturing process comprises capturing images from a cell in a metrology target formed in at least two different layers in the wafer with parts of the target offset in opposing directions with respect to corresponding parts in a different layer. The images may be captured using radiation of multiple different wavelengths, each image including + 1 and - 1 diffraction patterns. A first and second differential signal may be determined for respective pixels in each image by subtracting opposing pixels from the + 1 and - 1 diffraction orders for each of the multiple wavelengths. An OVL for the respective pixels may be determined based on analyzing the differential signals from multiple wavelengths simultaneously. Then an OVL for the pattern may be determined as a weighted average of the OVL of the respective pixels. The weighting may be according to the sensitivity of the OVL to variation in wavelength.

公开(公告)号：WO2018217232A1

公开(公告)日：2018-11-29

申请号：PCT/US2017/065629

申请日：2017-12-11

Applicant: KLA-TENCOR CORPORATION

Inventor： VOLKOVICH, Roie ,  ADEL, Michael E. ,  YERUSHALMI, Liran ,  HERZEL, Eitan ,  YE, Mengmeng ,  AMIT, Eran

IPC: H01L21/66

Abstract: Metrology methods and modules are provided, which comprise carrying out recipe setup procedure(s) and/or metrology measurement(s) using zonal analysis with respect to respective setup parameter(s) and/or metrology metric(s). The zonal analysis comprises relating to spatially variable values of the setup parameter(s) and/or metrology metric(s) across one or more wafers in one or more lots. Wafer zones may be discrete or spatially continuous, and be used to weight one or more parameter(s) and/or metric(s) during any of the stages of the respective setup and measurement processes.

公开(公告)号：WO2016010776A1

公开(公告)日：2016-01-21

申请号：PCT/US2015/039437

申请日：2015-07-07

Applicant: KLA-TENCOR CORPORATION

Inventor： KANDEL, Daniel ,  SMITH, Mark. D ,  WAGNER, Mark ,  AMIT, Eran ,  LEE, Myungjun

IPC: H01L21/66

CPC classification number: G06F17/5081 ,  G01N21/93 ,  G01N21/956 ,  G01N2201/13 ,  G06F2217/12 ,  H01L22/12 ,  H01L22/30 ,  Y02P80/30

Abstract: Metrology methods are provided, which comprise identifying overlay critical patterns in a device design, the overlay critical patterns having an overlay sensitivity to process variation above a specified threshold that depends on design specifications; and using metrology targets that correspond to the identified overlay critical patterns. Alternatively or complementarily, metrology methods comprise identifying yield critical patterns according to a corresponding process window narrowing due to specified process variation, wherein the narrowing is defined by a dependency of edge placement errors (EPEs) of the patterns on process parameters. Corresponding targets and measurements are provided.

Abstract translation: 提供了测量方法，其包括在设备设计中识别重叠关键模式，所述重叠关键模式对于依赖于设计规范的指定阈值以上的过程变化具有重叠灵敏度; 并使用与所识别的重叠关键模式相对应的度量目标。 或者或补充地，计量方法包括根据由于指定的过程变化而变窄的对应过程窗口来识别产量关键模式，其中，所述变窄由所述模式的边缘放置误差（EPE）对过程参数的依赖性来定义。 提供相应的目标和测量。

公开(公告)号：WO2015196168A1

公开(公告)日：2015-12-23

申请号：PCT/US2015/036825

申请日：2015-06-19

Applicant: KLA-TENCOR CORPORATION

Inventor： YOHANAN, Raviv ,  AMIT, Eran ,  GHINOVKER, Mark ,  ITZKOVICH, Tal ,  AMIR, Nuriel

IPC: H01L21/66

CPC classification number: G03F7/70633 ,  G03F7/70683

Abstract: Imaging metrology targets and methods are provided, which combine 1D elements designed to provide one-dimensional (1D) imaging metrology signals along at least two measurement directions and 20 elements designed to provide at least one two-dimensional (2D) imaging metrology overlay signal. The target area of the 1D elements may enclose the 2D elements or the target areas of the 1D and 2D elements may be partially or fully congruent. The compound targets are small, possible multilayered, and may be designed to be process compatible (e.g., by segmentation of the elements, interspaces between elements and element backgrounds) and possibly be produced in die. 2D elements may be designed to periodic to provide additional one dimensional metrology signals.

Abstract translation: 提供成像计量目标和方法，其组合1D元件，其被设计用于沿着至少两个测量方向提供一维（1D）成像测量信号，以及设计为提供至少一个二维（2D）成像测量覆盖信号的20个元件。 1D元件的目标区域可以包围2D元素，或者1D和2D元素的目标区域可以是部分或完全一致的。 复合靶是小的，可能的多层，并且可以被设计为与工艺相容（例如，通过元件的分割，元件和元件背景之间的间隙）并且可能在裸片中产生。 2D元件可被设计成周期性地提供额外的一维计量信号。

公开(公告)号：WO2015157464A1

公开(公告)日：2015-10-15

申请号：PCT/US2015/024999

申请日：2015-04-08

Applicant: KLA-TENCOR CORPORATION

Inventor： MARCIANO, Tal ,  AMIT, Eran ,  BRINGOLTZ, Barak ,  AMIR, Nuriel ,  SHAKED, Amit

IPC: G01B9/02 ,  G01B11/00 ,  G01B11/27

CPC classification number: G03F7/70633

Abstract: Metrology methods and targets are provided, for estimating inter-cell process variation by deriving, from overlay measurements of at least three target cells having different designed misalignments, a dependency of a measured inaccuracy on the designed misalignments (each designed misalignment is between at least two overlapping periodic structures in the respective target cell). Inaccuracies which are related to the designed misalignments are reduced, process variation sources are detected and targets and measurement algorithms are optimized according to the derived dependency.

Abstract translation: 提供了计量方法和目标，用于通过从具有不同设计的不对准的至少三个目标单元的重叠测量推导出测量的不准确度对所设计的不对准的依赖性（每个设计的未对准在至少两个 各个靶细胞中重叠的周期性结构）。 与设计的不对准相关的不准确被减少，检测到过程变化源，并根据派生的依赖性优化目标和测量算法。

公开(公告)号：WO2014210381A1

公开(公告)日：2014-12-31

申请号：PCT/US2014/044440

申请日：2014-06-26

Applicant: KLA-TENCOR CORPORATION

Inventor： AMIT, Eran ,  LOEVSKY, Barry ,  HILL, Andrew ,  MANASSEN, Amnon ,  AMIR, Nuriel ,  LEVINSKI, Vladimir ,  VOLKOVICH, Roie

IPC: G01B11/00 ,  G01B11/24 ,  G01N21/88 ,  H01L21/66

CPC classification number: G01B11/06 ,  G01B11/272 ,  G01B2210/56 ,  G01B2290/70 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/8848 ,  G06F17/5072 ,  G06F17/5081 ,  H01L22/30

Abstract: Targets, target elements and target design method are provided, which comprise designing a target structure to have a high contrast above a specific contrast threshold to its background in polarized light while having a low contrast below the specific contrast threshold to its background in non-polarized light. The targets may have details at device feature scale and be compatible with device design rules yet maintain optical contrast when measured with polarized illumination and thus be used effectively as metrology targets. Design variants and respective measurement optical systems are likewise provided.

Abstract translation: 提供目标，目标元素和目标设计方法，其包括将目标结构设计成在偏振光背景下具有高于特定对比度阈值的高对比度，同时具有低于特定对比度阈值至其非极化背景下的特定对比度阈值的低对比度 光。 目标可能在设备特征尺度上具有细节，并且与设备设计规则兼容，并且当用偏振照明测量时保持光学对比度，并且因此被有效地用作计量目标。 同样提供了设计变型和相应的测量光学系统。

公开(公告)号：WO2014169102A1

公开(公告)日：2014-10-16

申请号：PCT/US2014/033621

申请日：2014-04-10

Applicant: KLA-TENCOR CORPORATION

Inventor： AMIT, Eran ,  YOHANAN, Raviv ,  ITZKOVICH, Tal ,  AMIR, Nuriel ,  VOLKOVICH, Roie ,  DONGSUB, Choi

IPC: H01L21/66 ,  H01L21/68

CPC classification number: G06F17/5072 ,  G01N21/93 ,  G01N21/956 ,  G03F7/0002 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31138 ,  Y10T428/24802

Abstract: Target designs methods and targets are provided, in which at least some of the differentiation between target elements and their background is carried out by segmenting either of them. Directed self-assembly (DSA) processes are used to generate fine segmentation, and various characteristics of the polymer lines and their guiding lines are used to differentiate target elements from their background. Target designs and design principles are disclosed in relation to the DSA process, as well as optimization of the DSA process to yield high metrology measurement accuracy in face of production inaccuracies. Furthermore, designs and methods are provided for enhancing and using ordered regions of a DSA-produced polymer surface as target elements and as hard masks for production processes. The targets and methods may be configured to enable metrology measurements using polarized light to distinguish target elements or DSA features.

Abstract translation: 提供了目标设计方法和目标，其中目标元素与其背景之间的至少一些区分通过分割它们之一进行。 定向自组装（DSA）过程用于生成细分，聚合物线及其引导线的各种特征用于区分目标元素与其背景。 关于DSA过程披露了目标设计和设计原理，以及在生产不准确的情况下优化DSA过程以产生高计量测量精度。 此外，提供了用于增强和使用DSA生产的聚合物表面的有序区域作为目标元素的设计和方法，以及用于生产过程的硬掩模。 目标和方法可以被配置为使得能够使用偏振光进行度量测量来区分目标元素或DSA特征。

公开(公告)号：WO2014004669A1

公开(公告)日：2014-01-03

申请号：PCT/US2013/047887

申请日：2013-06-26

Applicant: KLA-TENCOR CORPORATION

Inventor： LEVINSKI, Vladimir ,  KANDEL, Daniel ,  AMIT, Eran

IPC: H01L21/66

CPC classification number: G01B11/272 ,  G01N21/47 ,  G01N21/956 ,  G03F7/70633 ,  H01L23/544 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In one embodiment, a semiconductor target for detecting overlay error between two or more successive layers of a substrate or between two or more separately generated patterns on a single layer of a substrate is disclosed. The target comprises at least a plurality of a plurality of first grating structures having a course pitch that is resolvable by an inspection tool and a plurality of second grating structures positioned relative to the first grating structures. The second grating structures have a fine pitch that is smaller than the course pitch, and the first and second grating structures are both formed in two or more successive layers of a substrate or between two or more separately generated patterns on a single layer of a substrate. The first and second gratings have feature dimensions that all comply with a predefined design rules specification.

Abstract translation: 在一个实施例中，公开了一种半导体靶，用于检测衬底的两个或更多个连续层之间或在衬底的单个层上的两个或更多个分开产生的图案之间的重叠误差。 目标包括至少多个多个第一光栅结构，其具有通过检查工具可分辨的光程间距和相对于第一光栅结构定位的多个第二光栅结构。 第二光栅结构具有小于光栅间距的细间距，并且第一和第二光栅结构均形成在衬底的两个或更多个连续层中，或者在衬底的单个层上的两个或更多个分开产生的图案之间 。 第一和第二光栅具有全部符合预定义的设计规则规范的特征尺寸。

公开(公告)号：EP3870935A1

公开(公告)日：2021-09-01

申请号：EP19886957.0

申请日：2019-08-05

Applicant: Kla-Tencor Corporation

Inventor： MANASSEN, Amnon ,  PASKOVER, Yuri ,  AMIT, Eran

IPC: G01B11/27 ,  G01B9/02 ,  G01N21/47 ,  G03F7/20 ,  G01N21/956