公开(公告)号：SG178375A1

公开(公告)日：2012-03-29

申请号：SG2012009668

申请日：2010-08-26

Applicant: LAM RES CORP

Inventor： JUCO ELLER Y ,  SHIN NEUNGHO ,  KIM YUNSANG ,  BAILEY ANDREW

Abstract: An arrangement for controlling bevel etch rate during plasma processing within a processing chamber. The arrangement includes a power source and a gas distribution system. The arrangement also includes a lower electrode, which is configured at least for supporting a substrate. The arrangement further includes a top ring electrode positioned above the substrate and a bottom ring electrode positioned below the substrate. The arrangement yet also includes a first match arrangement coupled to the top ring electrode and configured at least for controlling current flowing through the top ring electrode to control amount of plasma available for etching at least a part of the substrate top edge. The arrangement yet further includes a second match arrangement configured to control the current flowing through the bottom ring electrode to control amount of plasma available for at least etching at least a part of the substrate bottom edge.

公开(公告)号：AT506687T

公开(公告)日：2011-05-15

申请号：AT04710690

申请日：2004-02-12

Applicant: LAM RES CORP

Inventor： WILCOXSON MARK ,  BAILEY ANDREW

IPC: H01J7/24 ,  H01J37/32 ,  H01Q1/36 ,  H01Q7/00

Abstract: The invention provides a method, for processing a substrate. The substrate is placed in a chamber, where the chamber comprises a substrate holder within the chamber and a dielectric window forming a side of the chamber. A gas is provided into the chamber. An antenna is used to generate an azimuthally symmetric electric field. A substantially azimuthally symmetric plasma is formed from the gas using the azimuthally symmetric electric field. A substantially uniform process rate is produced across a surface of a substrate.

公开(公告)号：AT420455T

公开(公告)日：2009-01-15

申请号：AT00991021

申请日：2000-11-14

Applicant: LAM RES CORP

Inventor： BAILEY ANDREW ,  SCHOEPP ALAN ,  BRIGHT NICOLAS

IPC: H01J37/32 ,  H05H1/46 ,  C23C16/507 ,  H01L21/205 ,  H01L21/3065

Abstract: A plasma confinement arrangement for controlling the volume of a plasma while processing a substrate inside a process chamber using a plasma enhanced process is disclosed. The arrangement includes a first magnetic bucket having a plurality of first magnetic elements. The first magnetic elements being configured for producing a first magnetic field inside the process chamber. The arrangement further includes a second magnetic bucket having a plurality of second magnetic elements. The second magnetic elements being configured for producing a second magnetic field inside the process chamber. The second magnetic field being configured to combine with the first magnetic field to produce a resultant magnetic field between the first magnetic bucket and the second magnetic bucket. The resultant magnetic field being configured to permit by-product gas from the processing to pass through while substantially confining the plasma within a volume defined at least by the process chamber and the resultant magnetic field.