公开(公告)号：WO2006098888A2

公开(公告)日：2006-09-21

申请号：PCT/US2006007401

申请日：2006-02-27

Applicant: LAM RES CORP ,  KIM YUNSANG ,  BAILEY ANDREW III ,  YOON HYUNGSUK ALEXANDER ,  HOWALD ARTHUR M

Inventor： KIM YUNSANG ,  BAILEY ANDREW III ,  YOON HYUNGSUK ALEXANDER ,  HOWALD ARTHUR M

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/7684 ,  H01L21/31683 ,  H01L21/321 ,  H01L21/32115 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/32138 ,  H01L21/32139 ,  H01L21/76865 ,  H01L21/76885

Abstract: A method of etching a conductive layer includes converting at least a portion of the conductive layer and etching the conductive layer to substantially remove the converted portion of the conductive layer and thereby expose a remaining surface. The remaining surface has an average surface roughness of less than about 10 nm. A system for etching a conductive layer is also disclosed.

Abstract translation: 蚀刻导电层的方法包括转换导电层的至少一部分并蚀刻导电层，以基本上去除导电层的转换部分，从而暴露出剩余的表面。 剩余的表面具有小于约10nm的平均表面粗糙度。 还公开了用于蚀刻导电层的系统。

公开(公告)号：WO9967808A9

公开(公告)日：2000-11-02

申请号：PCT/US9914069

申请日：1999-06-22

Applicant: LAM RES CORP

Inventor： HOWALD ARTHUR M ,  CHEN ANTHONY L ,  SCHOEPP ALAN M

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065

CPC classification number: H01J37/32467 ,  H01J37/321 ,  H01J37/32477

Abstract: A window of a plasma processing chamber. The window includes a first dielectric portion having a first electrical thickness and a first resistivity to an etching plasma that is formed within the plasma processing chamber. There is further included a second dielectric portion disposed within the first dielectric portion. The second dielectric portion has a second electrical thickness that is less than the first electrical thickness. The second dielectric portion is formed of a substantially transparent material and has a second resistivity to the etching plasma. The second resistivity is higher than the first resistivity.

Abstract translation: 等离子体处理室的窗口。 窗口包括具有第一电气厚度和形成在等离子体处理室内的蚀刻等离子体的第一电阻率的第一电介质部分。 还包括设置在第一电介质部分内的第二电介质部分。 第二电介质部分具有小于第一电气厚度的第二电气厚度。 第二电介质部分由基本上透明的材料形成，并且对蚀刻等离子体具有第二电阻率。 第二电阻率高于第一电阻率。

公开(公告)号：JP2010251768A

公开(公告)日：2010-11-04

申请号：JP2010114452

申请日：2010-05-18

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： HOWALD ARTHUR M ,  HOLLAND JOHN P ,  OLSON CHRISTOPHER

IPC: H01L21/3065 ,  H05H1/00 ,  C23F4/00 ,  H01J7/24 ,  H01J37/32 ,  H01L21/302 ,  H01L21/31 ,  H03H7/40 ,  H05B31/26 ,  H05H1/46

CPC classification number: H03H7/40 ,  H01J37/32082 ,  H01J37/32174

Abstract: PROBLEM TO BE SOLVED: To provide a method for suitably controlling plasma of a plasma processing apparatus. SOLUTION: A tendency for discontinuity to occur in the amount of power reflected back to the high-frequency bias source of a vacuum plasma processor is overcome by controlling the high-frequency bias source output power so that the power delivered to plasma 50 in a vacuum processing chamber remains substantially constant. The high-frequency bias source output power is changed much faster than changes in capacitors of a matching network 108 connecting the high-frequency bias power source to the electrode of a workpiece holder processor. The capacitive impedance component of the plasma is determined by optically measuring the thickness of a plasma sheath in the chamber. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种适当地控制等离子体处理装置的等离子体的方法。 解决方案：通过控制高频偏置源输出功率来克服反射回到真空等离子体处理器的高频偏压源的功率量中的不连续性的趋势，使得输送到等离子体50的功率 在真空处理室中保持基本恒定。 高频偏置源输出功率比连接高频偏置电源与工件支架处理器的电极的匹配网络108的电容器的变化快得多。 通过光学测量腔室中的等离子体护套的厚度来确定等离子体的电容性阻抗分量。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010050463A

公开(公告)日：2010-03-04

申请号：JP2009206010

申请日：2009-09-07

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： HOWALD ARTHUR M ,  HOLLAND JOHN P

IPC: B23Q3/15 ,  H01L21/683 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H02N13/00

CPC classification number: H01L21/6833 ,  Y10T279/23

Abstract: PROBLEM TO BE SOLVED: To provide a dechucking method of an electrostatically chucked workpiece by preventing rupture and cracks. SOLUTION: A glass workpiece 32 is dechucked from a monopolar electrostatic chuck by gradually reducing the chucking voltage during processing while maintaining the voltage high enough to clamp the workpiece in a plasma processing chamber. The chucking voltage during processing is controlled in response to flow rate of a heat transfer fluid flowing to the chuck to maintain the chucking force and the flow rate approximately constant. A reverse polarity voltage applied to the chuck at the end of processing assists in dechucking. The workpiece temperature is maintained at a high value at the end of processing to assisting in dechucking. A peak current flowing through the chuck during workpiece lifting from the chuck controls the amplitude and/or duration of the reverse polarity voltage during the next dechucking operation. An inert plasma in the chamber removes a residual charge from the workpiece after workpiece lifting from the chuck. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：通过防止破裂和裂纹来提供静电夹持工件的脱扣方法。 解决方案：通过在加工期间逐渐降低夹持电压，将玻璃工件32从单极静电卡盘中拔出，同时保持电压足够高以将工件夹紧在等离子体处理室中。 响应于流过卡盘的传热流体的流量来控制处理期间的夹紧电压，以保持卡紧力并且流速近似恒定。 在加工结束时施加到卡盘的反极性电压有助于脱扣。 在加工结束时，工件温度保持在高值，以帮助脱帽。 在卡盘的工件提升期间流过卡盘的峰值电流控制下一次脱扣操作期间的反极性电压的幅度和/或持续时间。 室内的惰性等离子体从卡盘上取出后，从工件中除去剩余的电荷。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：WO2008027216A2

公开(公告)日：2008-03-06

申请号：PCT/US2007018270

申请日：2007-08-17

Applicant: LAM RES CORP ,  DORDI YEZDI ,  REDEKER FRITZ C ,  BOYD JOHN ,  THIE WILLIAM ,  ARUNAGIRI TIRUCHIRAPALLI ,  HOWALD ARTHUR M ,  YOON HYUNGSUK ALEXANDER ,  VERTOMMEN JOHAN

Inventor： DORDI YEZDI ,  REDEKER FRITZ C ,  BOYD JOHN ,  THIE WILLIAM ,  ARUNAGIRI TIRUCHIRAPALLI ,  HOWALD ARTHUR M ,  YOON HYUNGSUK ALEXANDER ,  VERTOMMEN JOHAN

IPC: B05D3/00 ,  B05D1/18 ,  B29C71/04 ,  C23C16/00

CPC classification number: H01L21/0206 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/32115 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76883

Abstract: The embodiments provide processes and integrated systems that produce a metal-to-metal or a silicon-to-metal interface to enhance electro-migration performance, to provide lower metal resistivity, and to improve metal-to-metal or silicon-to-metal interfacial adhesion for copper interconnects. An exemplary method of preparing a substrate surface to selectively deposit a thin layer of a cobalt-alloy material on a copper surface of in an integrated system to improve electromigration performance of a copper interconnect is provided. The method includes removing contaminants and metal oxides from the substrate surface in the integrated system, and reconditioning the substrate surface using a reducing environment after removing contaminants and metal oxides in the integrated system. The method also includes selectively depositing the thin layer of cobalt-alloy material on the copper surface of the copper interconnect in the integrated system after reconditioning the substrate surface. System to practice the exemplary method described above are also provided.

公开(公告)号：WO2006044722A3

公开(公告)日：2006-06-29

申请号：PCT/US2005037125

申请日：2005-10-12

Applicant: LAM RES CORP ,  HOWALD ARTHUR M ,  KUTHI ANDRAS ,  BAILEY ANDREW D III

Inventor： HOWALD ARTHUR M ,  KUTHI ANDRAS ,  BAILEY ANDREW D III

IPC: G06F19/00 ,  H01J7/24 ,  H01J37/32 ,  H03H7/40

CPC classification number: H01J37/32082 ,  H01J37/32183 ,  H01J37/3299 ,  H03H7/40 ,  H05H1/46

Abstract: Methods for improving the stability of RF power delivery to a plasma load are disclosed (806). The method includes adding an RF impedance resistor and or a RF power attenuator at one of specific locations in the RF power system to lower the impedance derivatives while keeping the impedance marching circuit in tune with the RF transmission line impedance (804).

Abstract translation: 公开了用于提高RF功率输送到等离子体负载的稳定性的方法（806）。 该方法包括在RF功率系统的特定位置之一处添加RF阻抗电阻器和RF功率衰减器，以降低阻抗导数，同时保持阻抗行进电路与RF传输线路阻抗匹配（804）。

公开(公告)号：WO2006004744A3

公开(公告)日：2006-06-08

申请号：PCT/US2005022914

申请日：2005-06-28

Applicant: LAM RES CORP ,  HOWALD ARTHUR M

Inventor： HOWALD ARTHUR M

IPC: H02H1/00 ,  H01L21/683

CPC classification number: H01L21/6833 ,  H01J37/32082 ,  H02N13/00 ,  Y10T279/23 ,  Y10T307/858

Abstract: A method for removing a substrate that is attached to a bipolar electrostatic chuck (ESC) by application of a bipolar ESC voltage is provided which includes discontinuing the bipolar ESC voltage after processing a current substrate, and determining a monopolar component error of the processing. The method also includes correcting the monopolar component error for a subsequent substrate.

Abstract translation: 提供了一种通过施加双极性ESC电压来除去附着在双极静电卡盘（ESC）上的基板的方法，该方法包括在处理当前基板之后停止双极性ESC电压，并确定处理的单极分量误差。 该方法还包括校正后续衬底的单极分量误差。

公开(公告)号：WO2005094244A3

公开(公告)日：2006-03-30

申请号：PCT/US2004043911

申请日：2004-12-30

Applicant: LAM RES CORP ,  BAILEY ANDREW D III ,  LOHOKARE SHRIKANT P ,  HOWALD ARTHUR M ,  KIM YUNSANG

Inventor： BAILEY ANDREW D III ,  LOHOKARE SHRIKANT P ,  HOWALD ARTHUR M ,  KIM YUNSANG

IPC: B08B6/00 ,  B08B9/00 ,  B44C1/22 ,  H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/44 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L29/24 ,  H01L29/40 ,  H01L33/00

CPC classification number: B08B7/00 ,  B08B7/0035 ,  B08B7/0071 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32862 ,  H01J2237/022 ,  H01L21/3065 ,  H01L21/32115 ,  H01L21/32136 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67069 ,  H01L21/6708 ,  H01L21/7684 ,  Y10S438/905

Abstract: A method for cleaning a processing chamber that includes heating an inner surface of the processing chamber to a first temperature. The first temperature can be sufficient to cause a first species to become volatile. The first species can be one of several species deposited on the inner surface. A cleaning chemistry is injected into the processing chamber. The cleaning chemistry can be reactive with a second one of the species to convert the second species to the first species. The volatilized first species can also be output from the processing chamber. A system for cleaning the process chamber is also described.

Abstract translation: 一种用于清洁处理室的方法，包括将处理室的内表面加热至第一温度。 第一个温度足以使第一个物质变得挥发。 第一种可以是沉积在内表面上的几种物质之一。 将清洁化学品注入到处理室中。 清洁化学品可以与第二种物质反应以将第二种类转化为第一种。 挥发的第一种也可以从处理室输出。 还描述了用于清洁处理室的系统。

公开(公告)号：WO0124255A9

公开(公告)日：2002-09-26

申请号：PCT/US0026600

申请日：2000-09-27

Applicant: LAM RES CORP

Inventor： HOWALD ARTHUR M

IPC: H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/66

CPC classification number: B24B37/013 ,  H01J37/32935 ,  H01L22/26

Abstract: A method for monitoring a device fabrication process. The method includes etching into a wafer disposed inside a chamber and detecting the intensity of a portion of a light reflected from a surface of the wafer and further scattered at a scattering inside surface of the chamber.

Abstract translation: 一种用于监测器件制造工艺的方法。 该方法包括蚀刻到设置在室内的晶片中，并且检测从晶片的表面反射的光的一部分的强度，并进一步在室的散射内表面散射。

公开(公告)号：AU5913699A

公开(公告)日：2000-04-17

申请号：AU5913699

申请日：1999-09-10

Applicant: LAM RES CORP

Inventor： HOWALD ARTHUR M ,  HOLLAND JOHN P

IPC: B23Q3/15 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H01L21/68

Abstract: A glass workpiece processed in a vacuum plasma processing chamber is dechucked from a monopolar electrostatic chuck by gradually reducing the chucking voltage during processing while maintaining the voltage high enough to clamp the workpiece. The chucking voltage during processing is controlled in response to flow rate of a heat transfer fluid flowing to the chuck to maintain the chucking force and the flow rate approximately constant. A reverse polarity voltage applied to the chuck at the end of processing assists in dechucking. The workpiece temperature is maintained at a high value at the end of processing to assisting in dechucking. Peak current flowing through the chuck during workpiece lifting from the chuck controls the amplitude and/or duration of the reverse polarity voltage during the next dechucking operation. An inert plasma in the chamber removes residual charge from the workpiece after workpiece lifting from the chuck.