公开(公告)号：JP2003249474A

公开(公告)日：2003-09-05

申请号：JP2002040739

申请日：2002-02-18

Applicant: LAM RES CORP

Inventor： KOBAYASHI NAOAKI ,  YAMAGUCHI RYUTA ,  TAJIMA KAORI ,  ORI KOSUKE ,  HAIGATA HIDESATO ,  NAKAJIMA SHU ,  NOJIRI KAZUO ,  SAGANE YOICHI

IPC: G03F7/42 ,  B08B3/02 ,  H01L21/027 ,  H01L21/304

Abstract: PROBLEM TO BE SOLVED: To provide a water supply device having a parameter for determining highly efficient water supply conditions of high peeling/removal ability of unnecessary matters of a resist film or the like and its method. SOLUTION: In the water supply device and method for supplying water for washing/peeling/processing of an object, a nozzle device for spraying a spraying body of water vapor body and water mist body is provided to a plate- like object treatment surface of an object. As for parameters determining water supply conditions, at least (1) a weight ratio between water vapor body and water mist body in an object treatment surface, (2) a temperature of an object treatment surface and (3) a distance between a supply opening of a nozzle device (water) and an object treatment surface are provided. The parameters are constituted to be set at proper values so that water is supplied to an object. COPYRIGHT: (C)2003,JPO

公开(公告)号：JP2001345311A

公开(公告)日：2001-12-14

申请号：JP2001095019

申请日：2001-03-29

Applicant: LAM RES CORP

Inventor： NAKAJIMA SHU

IPC: H05H1/46 ,  B01J19/08 ,  H01L21/302 ,  H01L21/3065

Abstract: PROBLEM TO BE SOLVED: To prevent deposition of conductive reaction products without corroding a TCP window excessively. SOLUTION: An inductively coupled plasma etching system is provided with a chamber and a window for sealing the top opening of the chamber. The window has an internal surface exposed to the internal area of the chamber. A metallic plate which functions as a Faraday shield is set up above the window separately from the window. A coil is conductively coupled with the metallic plate at a connecting position which is constituted to generate such a peak-to- peak voltage that reduces the sputtered amount of the internal surface of the window in the optimum way and substantially simultaneously prevents deposition of by-products of etching on the internal surface of the window. In another embodiment, this etching system is provided with a controller for impressing the peak-to-peak voltage upon the metallic plate from the outside. The controller is provided with an oscillation circuit, a matching circuit, an RF power source, and feedback control for monitoring the impressed peak-to-peak voltage.

公开(公告)号：JP2001284265A

公开(公告)日：2001-10-12

申请号：JP2000099729

申请日：2000-03-31

Applicant: LAM RES CORP

Inventor： NAKAJIMA SHU

IPC: C04B35/565 ,  B01J19/08 ,  C23C16/50 ,  C23F4/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

Abstract: PROBLEM TO BE SOLVED: To provide a plasma processor which prevents emission of contaminants from an inner wall surface of a chamber being caused by a plasma. SOLUTION: A plasma processor 100 includes a reaction chamber 70 having a plasma protective member 40 coated on its inner wall surface. The protective member 40 has a sintered silicone carbide 42 doped with boron to increase resistivity and a silicone carbide film 44 deposited on the carbide 42 and having high purity and low resistivity. A linear groove 46 is made on the carbide film 44 and the film 44 is defined by the groove 46.

公开(公告)号：DE60130744D1

公开(公告)日：2007-11-15

申请号：DE60130744

申请日：2001-03-28

Applicant: LAM RES CORP

Inventor： NAKAJIMA SHU

IPC: H01J37/32

Abstract: An inductively coupled plasma etching apparatus includes a chamber (100) and a window (10) for sealing a top opening of the chamber. The window (10) has an inner surface that is exposed to an internal region of the chamber (100). A metal plate (217), which acts as a Faraday shield, is disposed above and spaced apart from the window (10). A coil (117) is disposed above and spaced apart from the metal plate (217). The coil (117) is conductively connected to the metal plate (217) at a connection location (see connector 207) that is configured to generate a peak-to-peak voltage on the metal plate that optimally reduces sputtering of the inner surface of the window (10) while substantially simultaneously preventing deposition of etch byproducts on the inner surface of the window. In another embodiment, the apparatus includes a controller for externally applying a peak-to-peak voltage to the metal plate (217). The controller includes an oscillation circuit, a matching circuit, an RF generator, and a feedback control for monitoring the applied peak-to-peak voltage. Methods for optimizing operation of an inductively coupled plasma etching apparatus also are described.

公开(公告)号：AU4788901A

公开(公告)日：2001-10-15

申请号：AU4788901

申请日：2001-03-28

Applicant: LAM RES CORP

Inventor： NAKAJIMA SHU

IPC: H01J37/32

Abstract: An inductively coupled plasma etching apparatus includes a chamber (100) and a window (10) for sealing a top opening of the chamber. The window (10) has an inner surface that is exposed to an internal region of the chamber (100). A metal plate (217), which acts as a Faraday shield, is disposed above and spaced apart from the window (10). A coil (117) is disposed above and spaced apart from the metal plate (217). The coil (117) is conductively connected to the metal plate (217) at a connection location (see connector 207) that is configured to generate a peak-to-peak voltage on the metal plate that optimally reduces sputtering of the inner surface of the window (10) while substantially simultaneously preventing deposition of etch byproducts on the inner surface of the window. In another embodiment, the apparatus includes a controller for externally applying a peak-to-peak voltage to the metal plate (217). The controller includes an oscillation circuit, a matching circuit, an RF generator, and a feedback control for monitoring the applied peak-to-peak voltage. Methods for optimizing operation of an inductively coupled plasma etching apparatus also are described.

公开(公告)号：AT459100T

公开(公告)日：2010-03-15

申请号：AT02741903

申请日：2002-06-10

Applicant: LAM RES CORP

Inventor： NAKAJIMA SHU ,  BENJAMIN NEIL

IPC: H01L21/3065 ,  H01L21/68 ,  H01L21/683 ,  H02N13/00

Abstract: A sintered ceramic electrostatic chucking device (ESC) which includes a patterned electrostatic clamping electrode embedded in a ceramic body wherein the clamping electrode includes at least one strip of a sintered electrically conductive material arranged in a fine pattern. Due to the fineness of the electrode pattern employed, stresses induced during manufacture of the ESC are reduced such that the clamping electrode remains substantially planar after the sintering operation. The resulting ESC allows for improved clamping uniformity. Another ESC includes an insulating or semi-conducting body and a clamping electrode having a high resistivity and or a high lateral impedance. The electrostatic chucking device provides improved RF coupling uniformity when RF energy is coupled thorough the clamping electrode from an underlying RF electrode. The RF electrode can be a separate baseplate or it can be a part of the chuck. The ESC's may be used to support semiconductor substrates such as semiconductor wafers in plasma processing equipment.

公开(公告)号：DE60130977T2

公开(公告)日：2008-07-17

申请号：DE60130977

申请日：2001-03-28

Applicant: LAM RES CORP

Inventor： NAKAJIMA SHU

IPC: H01J37/32