公开(公告)号：WO0175930A3

公开(公告)日：2002-05-23

申请号：PCT/US0110183

申请日：2001-03-28

Applicant: LAM RES CORP ,  NAKAJIMA SHU

Inventor： NAKAJIMA SHU

IPC: H01J37/32

CPC classification number: H01J37/321

Abstract: An inductively coupled plasma etching apparatus includes a chamber (100) and a window (10) for sealing a top opening of the chamber. The window (10) has an inner surface that is exposed to an internal region of the chamber (100). A metal plate (217), which acts as a Faraday shield, is disposed above and spaced apart from the window (10). A coil (117) is disposed above and spaced apart from the metal plate (217). The coil (117) is conductively connected to the metal plate (217) at a connection location (see connector 207) that is configured to generate a peak-to-peak voltage on the metal plate that optimally reduces sputtering of the inner surface of the window (10) while substantially simultaneously preventing deposition of etch byproducts on the inner surface of the window. In another embodiment, the apparatus includes a controller for externally applying a peak-to-peak voltage to the metal plate (217). The controller includes an oscillation circuit, a matching circuit, an RF generator, and a feedback control for monitoring the applied peak-to-peak voltage. Methods for optimizing operation of an inductively coupled plasma etching apparatus also are described.

Abstract translation: 电感耦合等离子体蚀刻装置包括用于密封腔室顶部开口的腔室（100）和窗口（10）。 窗口（10）具有暴露于室（100）的内部区域的内表面。 用作法拉第屏蔽的金属板（217）设置在窗口（10）的上方并与之隔开。 线圈（117）设置在金属板（217）的上方并与金属板间隔开。 线圈（117）在被配置为在金属板上产生峰峰值电压的连接位置（见连接器207）处导电连接到金属板（217），其最佳地减小了金属板的内表面的溅射 窗口（10），同时基本上同时防止蚀刻副产物沉积在窗的内表面上。 在另一实施例中，该装置包括用于向金属板（217）外部施加峰 - 峰电压的控制器。 控制器包括振荡电路，匹配电路，RF发生器和用于监视施加的峰 - 峰电压的反馈控制。 还描述了用于优化电感耦合等离子体蚀刻装置的操作的方法。

公开(公告)号：WO0175931A3

公开(公告)日：2002-03-21

申请号：PCT/US0110335

申请日：2001-03-28

Applicant: LAM RES CORP ,  NAKAJIMA SHU

Inventor： NAKAJIMA SHU

IPC: H01J37/32

CPC classification number: H01J37/321

Abstract: An inductively coupled plasma etching apparatus includes a chamber (100) for generating a plasma therein. The chamber (100) is defined by walls of a housing. A coil (313) for receiving high frequency (RF) power is disposed adjacent to and outside of one of the walls (101) of the housing. A metal plate (217) is disposed adjacent to and outside of the wall (101) of the housing that the coil (313) is disposed adjacent to. The metal plate (217) is positioned in a spaced apart relationship between the coil (313) and the wall (101) of the housing and has radial slits formed therein that extend transversely to the coil (313). A connector (207) electrically connects the metal plate (217) to the coil (313). A method for controlling an inner surface of a wall defining a chamber in which a plasma is generated is also described.

Abstract translation: 电感耦合等离子体蚀刻装置包括用于在其中产生等离子体的腔室（100）。 腔室（100）由壳体的壁限定。 用于接收高频（RF）功率的线圈（313）设置在壳体的一个壁（101）的外侧。 金属板（217）被布置成与壳体的壁（101）相邻并且位于外侧，线圈（313）邻近设置。 金属板（217）以线圈（313）和壳体的壁（101）之间的间隔开的关系定位，并且在其中形成有横向于线圈（313）延伸的径向狭缝。 连接器（207）将金属板（217）电连接到线圈（313）。 还描述了一种用于控制限定其中产生等离子体的室的壁的内表面的方法。

公开(公告)号：WO03003449A2

公开(公告)日：2003-01-09

申请号：PCT/US0218093

申请日：2002-06-10

Applicant: LAM RES CORP ,  NAKAJIMA SHU ,  BENJAMIN NEIL

Inventor： NAKAJIMA SHU ,  BENJAMIN NEIL

IPC: H01L21/3065 ,  H01L21/683 ,  H02N13/00 ,  H01L21/68

CPC classification number: H01L21/6833

Abstract: A sintered ceramic electrostatic chucking device (ESC) which includes a patterned electrostatic clamping electrode embedded in a ceramic body wherein the clamping electrode includes at least one strip of a sintered electrically conductive material arranged in a fine pattern. Due to the fineness of the electrode pattern employed, stresses induced during manufacture of the ESC are reduced such that the clamping electrode remains substantially planar after the sintering operation. The resulting ESC allows for improved clamping uniformity. Another ESC includes an insulating or semi-conducting body and a clamping electrode having a high resistivity and or a high lateral impedance. The electrostatic chucking device provides improved RF coupling uniformity when RF energy is coupled thorough the clamping electrode from an underlying RF electrode. The RF electrode can be a separate baseplate or it can be a part of the chuck. The ESC's may be used to support semiconductor substrates such as semiconductor wafers in plasma processing equipment.

Abstract translation: 一种烧结陶瓷静电夹持装置（ESC），其包括嵌入在陶瓷体中的图案化静电夹持电极，其中所述夹持电极包括布置成精细图案的至少一个烧结导电材料条。 由于所使用的电极图案的细度，ESC制造期间引起的应力减小，使得夹紧电极在烧结操作之后保持基本平坦。 所得的ESC允许改进的夹紧均匀性。 另一个ESC包括绝缘或半导电体和具有高电阻率或高横向阻抗的夹持电极。 当RF能量通过来自底层RF电极的钳位电极耦合时，静电夹持装置提供改进的RF耦合均匀性。 RF电极可以是单独的基板，也可以是卡盘的一部分。 ESC可用于支持诸如等离子体处理设备中的半导体晶片的半导体衬底。

公开(公告)号：JP2008277847A

公开(公告)日：2008-11-13

申请号：JP2008152184

申请日：2008-06-10

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： NAKAJIMA SHU ,  BENJAMIN NEIL

IPC: H01L21/3065 ,  H01L21/683 ,  H02N13/00

CPC classification number: H01L21/6833

Abstract: PROBLEM TO BE SOLVED: To provide a sintered ceramic electrostatic chucking device (ESC) which includes a patterned electrostatic clamping electrode embedded in a ceramic body. SOLUTION: The clamping electrode includes at least one strip made of an electrically conductive material arranged in a fine pattern. Due to the fineness of the electrode pattern employed, stresses induced during manufacture of the ESC are reduced such that the electrostatic clamping electrode remains substantially planar after the sintering operation. The resulting ESC allows for improved clamping uniformity. Another ESC includes an insulating or semi-conducting body and a clamping electrode having a high resistivity or a high lateral impedance. The electrostatic chucking device provides improved RF coupling uniformity when RF energy is coupled through the clamping electrode from an underlying RF electrode. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种烧结陶瓷静电夹持装置（ESC），其包括嵌入在陶瓷体中的图案化静电夹持电极。 解决方案：夹持电极包括由精细图案布置的导电材料制成的至少一个条带。 由于使用的电极图案的细度，ESC制造期间引起的应力减小，使得静电夹持电极在烧结操作之后保持基本平坦。 所得的ESC允许改进的夹紧均匀性。 另一个ESC包括绝缘或半导电体和具有高电阻率或高横向阻抗的夹持电极。 当RF能量通过夹持电极从下面的RF电极耦合时，静电吸盘装置提供改进的RF耦合均匀性。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2001284442A

公开(公告)日：2001-10-12

申请号：JP2000099727

申请日：2000-03-31

Applicant: LAM RES CORP

Inventor： NAKAJIMA SHU

IPC: B23Q3/15 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H02N13/00 ,  H01L21/68

Abstract: PROBLEM TO BE SOLVED: To provide an electrostatic chuck capable of reducing contamination produced on a semiconductor wafer, and improving chuck responsiveness and its manufacturing method. SOLUTION: The electrostatic chuck adheres a ceramic layer 103 on the disk of prescribed thickness through an adhesive layer on a disk-like metal board 101, and a high purity insulation material layer 105 is formed on the ceramic layer 103.

公开(公告)号：DE60130977D1

公开(公告)日：2007-11-29

申请号：DE60130977

申请日：2001-03-28

Applicant: LAM RES CORP

Inventor： NAKAJIMA SHU

IPC: H01J37/32

公开(公告)号：AU4791001A

公开(公告)日：2001-10-15

申请号：AU4791001

申请日：2001-03-28

Applicant: LAM RES CORP

Inventor： NAKAJIMA SHU

IPC: H01J37/32

公开(公告)号：DE60235466D1

公开(公告)日：2010-04-08

申请号：DE60235466

申请日：2002-06-10

Applicant: LAM RES CORP

Inventor： NAKAJIMA SHU ,  BENJAMIN NEIL

IPC: H01L21/3065 ,  H01L21/68 ,  H01L21/683 ,  H02N13/00

Abstract: A sintered ceramic electrostatic chucking device (ESC) which includes a patterned electrostatic clamping electrode embedded in a ceramic body wherein the clamping electrode includes at least one strip of a sintered electrically conductive material arranged in a fine pattern. Due to the fineness of the electrode pattern employed, stresses induced during manufacture of the ESC are reduced such that the clamping electrode remains substantially planar after the sintering operation. The resulting ESC allows for improved clamping uniformity. Another ESC includes an insulating or semi-conducting body and a clamping electrode having a high resistivity and or a high lateral impedance. The electrostatic chucking device provides improved RF coupling uniformity when RF energy is coupled thorough the clamping electrode from an underlying RF electrode. The RF electrode can be a separate baseplate or it can be a part of the chuck. The ESC's may be used to support semiconductor substrates such as semiconductor wafers in plasma processing equipment.

公开(公告)号：DE60130744T2

公开(公告)日：2008-07-17

申请号：DE60130744

申请日：2001-03-28

Applicant: LAM RES CORP

Inventor： NAKAJIMA SHU

IPC: H01J37/32

Abstract: An inductively coupled plasma etching apparatus includes a chamber (100) and a window (10) for sealing a top opening of the chamber. The window (10) has an inner surface that is exposed to an internal region of the chamber (100). A metal plate (217), which acts as a Faraday shield, is disposed above and spaced apart from the window (10). A coil (117) is disposed above and spaced apart from the metal plate (217). The coil (117) is conductively connected to the metal plate (217) at a connection location (see connector 207) that is configured to generate a peak-to-peak voltage on the metal plate that optimally reduces sputtering of the inner surface of the window (10) while substantially simultaneously preventing deposition of etch byproducts on the inner surface of the window. In another embodiment, the apparatus includes a controller for externally applying a peak-to-peak voltage to the metal plate (217). The controller includes an oscillation circuit, a matching circuit, an RF generator, and a feedback control for monitoring the applied peak-to-peak voltage. Methods for optimizing operation of an inductively coupled plasma etching apparatus also are described.

公开(公告)号：AU2002314971A1

公开(公告)日：2003-03-03

申请号：AU2002314971

申请日：2002-06-10

Applicant: LAM RES CORP

Inventor： NAKAJIMA SHU ,  BENJAMIN NEIL

IPC: H01L21/3065 ,  H01L21/683 ,  H02N13/00 ,  H01L21/68

Abstract: A sintered ceramic electrostatic chucking device (ESC) which includes a patterned electrostatic clamping electrode embedded in a ceramic body wherein the clamping electrode includes at least one strip of a sintered electrically conductive material arranged in a fine pattern. Due to the fineness of the electrode pattern employed, stresses induced during manufacture of the ESC are reduced such that the clamping electrode remains substantially planar after the sintering operation. The resulting ESC allows for improved clamping uniformity. Another ESC includes an insulating or semi-conducting body and a clamping electrode having a high resistivity and or a high lateral impedance. The electrostatic chucking device provides improved RF coupling uniformity when RF energy is coupled thorough the clamping electrode from an underlying RF electrode. The RF electrode can be a separate baseplate or it can be a part of the chuck. The ESC's may be used to support semiconductor substrates such as semiconductor wafers in plasma processing equipment.