公开(公告)号：MY136463A

公开(公告)日：2008-10-31

申请号：MYPI20042104

申请日：2004-06-01

Applicant: LAM RES CORP

Inventor： PATRICK ROGER ,  WONG VINCENT ,  HUANG CHUNG HO

IPC: H01L20060101

Abstract: A METHOD OF OPTIMIZING A SET OF STEPS IN A SEMI-CONDUCTOR PROCESSING SYSTEM COMPRISING A SOFTWARE CONTROL PROGRAM (128), WHEREIN THE SEMI-CONDUCTOR PROCESSING SYSTEM INCLUDES A FIRST FUNCTION, A SECOND FUNCTION, AND A THIRD FUNCTION, AND FURTHER INCLUDES A MEMORY (110) FOR STORING A SET OF VARIABLES, AND WHEREIN THE SET OF STEPS FURTHER INCLUDES A FIRST STEP, A SECOND STEP, AND A THIRD STEP. THE INVENTION INCLUDES GENERATING THE FIRST STEP ON AN EDITOR APPLICATION, WHEREIN THE FIRST FUNCTION IS ADDED TO THE FIRST STEP, AND IF REQUIRED, A FIRST SET OF USER INPUT INSTRUCTIONS IS ADDED. THE INVENTION ALSO INCLUDES GENERATING THE SECOND STEP ON THE EDITOR APPLICATION, WHEREIN THE SECOND FUNCTION IS ADDED TO THE SECOND STEP, AND IF REQUIRED, A SECOND SET OF USER INPUT INSTRUCTIONS IS ADDED; AND GENERATING THE THIRD STEP ON THE EDITOR APPLICATION, WHEREIN THE THIRD FUNCTION IS ADDED TO THE THIRD STEP, AND IF REQUIRED, A THIRD SET OF USER INPUT INSTRUCTIONS IS ADDED. THE INVENTION FURTHER INCLUDES PLACING THE FIRST STEP, THE SECOND STEP, AND THE THIRD STEP IN A PROPER ORDER; TRANSFERRING THE SET OF STEPS TO THE SEMI-CONDUCTOR PROCESSING SYSTEM; EXECUTING THE SET OF STEPS; STORING A SET OF RESULTS IN THE SET OF VARIABLES; AND, IF REQUIRED, GENERATING A REPORT (125) FROM THE SET OF VARIABLES.

公开(公告)号：DE69739768D1

公开(公告)日：2010-04-01

申请号：DE69739768

申请日：1997-12-18

Applicant: LAM RES CORP

Inventor： PATRICK ROGER ,  SIU STANLEY C ,  ATZEI LUISARITA

IPC: H01L21/302 ,  H01L21/321 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/3213

Abstract: A method in a high density plasma chamber for protecting a semiconductor substrate from charging damage from plasma-induced current through the substrate while etching through a selected portion of a conductive layer above the substrate. The method includes performing a bulk etch at least partially through the selected portion of the conductive layer using a first power setting for a plasma generating source of the high density plasma chamber. The method further includes performing a clearing etch through the selected portion of the conductive layer using a second power setting for the plasma generating source. In accordance with this embodiment, the second power setting is substantially minimized to reduce the charging damage.

公开(公告)号：AT458272T

公开(公告)日：2010-03-15

申请号：AT97952689

申请日：1997-12-18

Applicant: LAM RES CORP

Inventor： PATRICK ROGER ,  SIU STANLEY ,  ATZEI LUISARITA

IPC: H01L21/302 ,  H01L21/321 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/3213

Abstract: A method in a high density plasma chamber for protecting a semiconductor substrate from charging damage from plasma-induced current through the substrate while etching through a selected portion of a conductive layer above the substrate. The method includes performing a bulk etch at least partially through the selected portion of the conductive layer using a first power setting for a plasma generating source of the high density plasma chamber. The method further includes performing a clearing etch through the selected portion of the conductive layer using a second power setting for the plasma generating source. In accordance with this embodiment, the second power setting is substantially minimized to reduce the charging damage.

公开(公告)号：AU7111298A

公开(公告)日：1998-11-11

申请号：AU7111298

申请日：1998-04-15

Applicant: LAM RES CORP

Inventor： PATRICK ROGER ,  WILLIAMS NORMAN

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302

Abstract: A plasma processing system includes a plasma reactor, a first power circuit, a second power circuit and a feedback circuit. The first power circuit supplies a first radio frequency (rf) energy to the plasma reactor that is suitable for creating a direct current bias on a workpiece positioned within a plasma chamber. The second power circuit supplies a second rf energy to the plasma reactor that is suitable for striking a plasma within the plasma chamber. The feedback circuit is coupled to control the first power circuit by detecting at least one parameter associated with the first rf energy and providing a feedback control signal to the first power circuit. The first power circuit adjusts the first rf energy so that a level of energy of the ionized particles within the plasma chamber is substantially controlled via the direct current bias created by the first rf energy. A second feedback circuit can also be provided to control the second power circuit so that a level of plasma density within the plasma chamber is substantially controlled.

公开(公告)号：MY159992A

公开(公告)日：2017-02-15

申请号：MYPI2011000025

申请日：2009-07-06

Applicant: LAM RES CORP

Inventor： PATRICK ROGER ,  BETTENCOURT GREGORY R ,  KELLOGG MICHAEL C

IPC: H05H1/34 ,  C23C16/455 ,  H01J37/32 ,  H01L21/3065 ,  H05H1/38

Abstract: AN ELECTRODE ASSEMBLY FOR A PLASMA REACTION CHAMBER USED IN SEMICONDUCTOR SUBSTRATE PROCESSING.THE ASSEMBLY INCLUDES AN UPPER SHOWERHEAD ELECTRODE WHICH IS MECHANICALLY ATTACHED TO A BACKING PLATE (140) BY A SERIES OF SPACED APART CAM LOCKS.A GUARD RING (170) SURROUNDS THE BACKING PLATE (140) AND IS MOVABLE TO POSITIONS AT WHICH OPENINGS IN THE GUARD RING (170) ALIGN WITH OPENINGS IN THE BACKING PLATE (140) SO THAT THE CAM LOCKS CAN BE ROTATED WITH A TOOL TO RELEASE LOCKING PINS EXTENDING FROM THE UPPER FACE OF THE ELECTRODE.

公开(公告)号：DE69836857D1

公开(公告)日：2007-02-22

申请号：DE69836857

申请日：1998-04-15

Applicant: LAM RES CORP

Inventor： PATRICK ROGER ,  WILLIAMS NORMAN

IPC: H01J37/32 ,  H05H1/46 ,  H01L21/205 ,  H01L21/302

Abstract: A plasma processing system includes a plasma reactor, a first power circuit, a second power circuit and a feedback circuit. The first power circuit supplies a first radio frequency (rf) energy to the plasma reactor that is suitable for creating a direct current bias on a workpiece positioned within a plasma chamber. The second power circuit supplies a second rf energy to the plasma reactor that is suitable for striking a plasma within the plasma chamber. The feedback circuit is coupled to control the first power circuit by detecting at least one parameter associated with the first rf energy and providing a feedback control signal to the first power circuit. The first power circuit adjusts the first rf energy so that a level of energy of the ionized particles within the plasma chamber is substantially controlled via the direct current bias created by the first rf energy. A second feedback circuit can also be provided to control the second power circuit so that a level of plasma density within the plasma chamber is substantially controlled.