公开(公告)号：MY140300A

公开(公告)日：2009-12-31

申请号：MYPI20060643

申请日：2006-02-15

Applicant: LAM RES CORP

Inventor： YUN SEOKMIN ,  BOYD JOHN M ,  WILCOXSON MARK ,  LARIOS JOHN DE

IPC: B08B1/02 ,  H01L21/00

Abstract: A METHOD FOR REMOVING POST-PROCESSING RESIDUES IN A SINGLE WAFER CLEANING SYSTEM IS PROVIDED. THE METHOD INITIATES WITH PROVIDING (640) A FIRST HEATED FLUID TO A PROXIMITY HEAD (106) DISPOSED OVER A SUBSTRATE (108). THEN, A MENISCUS (116) OF THE FIRST FLUID IS GENERATED BETWEEN A SURFACE OF THE SUBSTRATE AND AN OPPOSING SURFACE OF THE PROXIMITY HEAD. THE SUBSTRATE IS LINEARLY MOVED UNDER THE PROXIMITY HEAD. A SINGLE WAFER CLEANING SYSTEM IS ALSO PROVIDED.

公开(公告)号：SG178798A1

公开(公告)日：2012-03-29

申请号：SG2012011540

申请日：2008-01-24

Applicant: LAM RES CORP

Inventor： YUN SEOKMIN ,  WILCOXSON MARK ,  DE LARIOS JOHN M

Abstract: METHOD OF LOW-K DIELECTRIC FILM REPAIRAn apparatus, system and method for repairing a carbon depleted low-k material in a low-k dielectric film layer includes identifying a repair chemistry having a hydrocarbon group, the repair chemistry configured to repair the carbon depleted low-k material and applying the identified repair chemistry meniscus to the low-k dielectric film layer such that the carbon depleted low-k material in the low-k dielectric film layer is sufficiently exposed to the repair chemistry meniscus substantially repairing the low-k material. The repaired low-k material exhibits substantially equivalent low-k dielectric characteristics of the low-k dielectric film layer.Fig. 2E

公开(公告)号：SG182670A1

公开(公告)日：2012-08-30

申请号：SG2012054318

申请日：2011-01-21

Applicant: LAM RES CORP

Inventor： YASSERI AMIR A ,  ZHU JI ,  YUN SEOKMIN ,  MUI DAVID S L ,  MIKHAYLICHENKO KATRINA

Abstract: A method is provided for treating the surface of high aspect ratio nanostructures to help protect the delicate nanostructures during some of the rigorous processing involved in fabrication of semiconductor devices. A wafer containing high aspect ratio nanostructures is treated to make the surfaces of the nanostructures more hydrophobic. The treatment may include the application of a primer that chemically alters the surfaces of the nanostructures preventing them from getting damaged during subsequent wet clean processes.. The wafer may then be further processed, for example a wet cleaning process followed by a drying process. The increased hydrophobicity of the nanostructures helps to reduce or prevent collapse of the nanostructures.

公开(公告)号：SG188880A1

公开(公告)日：2013-04-30

申请号：SG2013017629

申请日：2009-02-24

Applicant: LAM RES CORP

Inventor： YUN SEOKMIN ,  ZHU JI ,  DELARIOS JOHN M ,  WILCOXSON MARK

Abstract: METHOD OF DIELECTRIC FILM TREATMENTA method and system for cleaning a surface of a substrate after an etching operation includes determining a plurality of process parameters associated with the surface of the substrate. The process parameters define characteristics related to the surface of the substrate such as characteristics of the substrate surface to be cleaned, contaminants to be removed, features formed on the substrate and chemicals used in the fabrication operations. A plurality of application chemistries are identified based on the process parameters The plurality of application chemistries includes a first application chemistry as an emulsion having a first immiscible liquid combined with a second immiscible liquid and solid particles distributed within the first immiscible liquid. The plurality of application chemistries including the first application chemistry are applied to the surface of the substrate such that the combined chemistries enhance the cleaning process by substantially removing the particulate and polymer residue contaminants from the surface of the substrate while preserving the characteristics of the features and of the low-k dielectric material through which the features are formed.Figure 4

公开(公告)号：SG173863A1

公开(公告)日：2011-09-29

申请号：SG2011061637

申请日：2010-02-26

Applicant: LAM RES CORP

Inventor： SABBA YIZHAK ,  YUN SEOKMIN ,  KAWAGUCHI MARK ,  WILCOXSON MARK ,  PODLESNIK DRAGAN

Abstract: Apparatus and methods for removing particle contaminants from a surface of a substrate includes coating a layer of a viscoelastic material on the surface. The viscoelastic material is coated as a thin film and exhibits substantial liquid-like characteristic. An external force is applied to a first area of the surface coated with the viscoelastic material such that a second area of the surface coated with the viscoelastic material is not substantially subjected to the applied force. The force is applied for a time duration that is shorter than a intrinsic time of the viscoelastic material so as to access solid-like characteristic of the viscoelastic material. The viscoelastic material exhibiting solid-like characteristic interacts at least partially with at least some of the particle contaminants present on the surface. The viscoelastic material along with at least some of the particle contaminants is removed from the first area of the surface while the viscoelastic material is exhibiting solid-like characteristics.

公开(公告)号：IL179695A

公开(公告)日：2011-08-31

申请号：IL17969506

申请日：2006-11-29

Applicant: LAM RES CORP ,  WILCOXSON MARK HENRY ,  SADJADI REZA ,  HUDSON ERIC A ,  TIETZ JAMES V ,  YUN SEOKMIN ,  ZHU JI ,  CIRIGLIANO PETER ,  LEE SANGHEON ,  CHOI THOMAS S ,  LOEWENHARDT PETER

Inventor： WILCOXSON MARK HENRY ,  SADJADI REZA ,  HUDSON ERIC A ,  TIETZ JAMES V ,  YUN SEOKMIN ,  ZHU JI ,  CIRIGLIANO PETER ,  LEE SANGHEON ,  CHOI THOMAS S ,  LOEWENHARDT PETER

IPC: G03F7/42 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/461

Abstract: A method for etching a feature in a low-k dielectric layer through a photoresist etch mask over a substrate. A gas-modulated cyclic stripping process is performed for more than three cycles for stripping a single photoresist mask. Each cycle of the gas-modulated cyclic stripping process comprises performing a protective layer formation phase and a stripping phase. The protective layer forming phase using first gas chemistry with a deposition gas chemistry, wherein the protective layer forming phase is performed in about 0.005 to 10 seconds for each cycle. The performing the stripping phase for stripping the photoresist mask using a second gas chemistry using a stripping gas chemistry, where the first gas chemistry is different than the second gas chemistry, wherein the etching phase is performed in about 0.005 to 10 seconds for each cycle.