公开(公告)号：IL178053A

公开(公告)日：2010-06-30

申请号：IL17805306

申请日：2006-09-13

Applicant: LAM RES CORP ,  HOWALD ARTHUR M ,  LOHOKARE SHRIKANT P ,  III ANDREW D BAILEY ,  KIM YUNSANG

Inventor： HOWALD ARTHUR M ,  LOHOKARE SHRIKANT P ,  III ANDREW D BAILEY ,  KIM YUNSANG

IPC: H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/44 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L29/24 ,  H01L29/40 ,  H01L33/00

Abstract: A method for cleaning a processing chamber that includes heating an inner surface of the processing chamber to a first temperature. The first temperature can be sufficient to cause a first species to become volatile. The first species can be one of several species deposited on the inner surface. A cleaning chemistry is injected into the processing chamber. The cleaning chemistry can be reactive with a second one of the species to convert the second species to the first species. The volatilized first species can also be output from the processing chamber. A system for cleaning the process chamber is also described.

公开(公告)号：IL166342A

公开(公告)日：2009-08-03

申请号：IL16634205

申请日：2005-01-17

Applicant: LAM RES CORP ,  HOWALD ARTHUR M ,  KUTHI ANDREAS ,  WILCOXSON MARK HENRY ,  III ANDREW D BAILEY

Inventor： HOWALD ARTHUR M ,  KUTHI ANDREAS ,  WILCOXSON MARK HENRY ,  III ANDREW D BAILEY

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/3065 ,  H01Q1/26 ,  H01Q7/00 ,  H01Q11/12 ,  H01Q21/29

Abstract: An antenna arrangement for generating an rf field distribution at a plasma generating region inside a chamber wall of a process chamber of a plasma processing apparatus is described. The antenna arrangement includes an rf inductive antenna to which an rf power supply can be connected to supply an rf current to generate a first rf field extending into the plasma generating region. A passive antenna is also provided which is inductively coupled to the rf inductive antenna and configured to generate a second rf field modifying the first rf field. The rf field distribution at the plasma generating region increases the processing uniformity of the processing apparatus compared to that in the absence of the passive antenna.

公开(公告)号：US2726185A

公开(公告)日：1955-12-06

申请号：US28461752

申请日：1952-04-26

Applicant: HOWALD ARTHUR M

Inventor： HOWALD ARTHUR M

IPC: A01K87/00 ,  B29C53/56 ,  C03C25/10

CPC classification number: A01K87/00 ,  B29C53/562 ,  B29L2031/06 ,  B29L2031/7002 ,  C03C25/10 ,  Y10S138/02 ,  Y10S138/07 ,  Y10S273/07 ,  Y10T428/2936

公开(公告)号：US2312214A

公开(公告)日：1943-02-23

申请号：US42479841

申请日：1941-12-29

Applicant: HOWALD ARTHUR M ,  DEARING WILLIAM C

Inventor： HOWALD ARTHUR M ,  DEARING WILLIAM C

IPC: C08K3/16 ,  C08K3/30

CPC classification number: C08K3/16 ,  C08K3/30 ,  C08L61/24

公开(公告)号：WO0124255A2

公开(公告)日：2001-04-05

申请号：PCT/US0026600

申请日：2000-09-27

Applicant: LAM RES CORP

Inventor： HOWALD ARTHUR M

IPC: H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/66

CPC classification number: B24B37/013 ,  H01J37/32935 ,  H01L22/26

Abstract: A method for monitoring a device fabrication process. The method includes etching into a wafer disposed inside a chamber and detecting the intensity of a portion of a light reflected from a surface of the wafer and further scattered at a scattering inside surface of the chamber.

Abstract translation: 一种监测器件制造工艺的方法。 该方法包括蚀刻设置在室内的晶片，并检测从晶片表面反射的一部分光的强度，并进一步在室的散射内表面散射。

公开(公告)号：WO0019519B1

公开(公告)日：2000-05-25

申请号：PCT/US9920615

申请日：1999-09-10

Applicant: LAM RES CORP

Inventor： HOWALD ARTHUR M ,  HOLLAND JOHN P

IPC: B23Q3/15 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H01L21/68

CPC classification number: H01L21/6833 ,  Y10T279/23

Abstract: A glass workpiece processed in a vacuum plasma processing chamber is dechucked from a monopolar electrostatic chuck by gradually reducing the chucking voltage during processing while maintaining the voltage high enough to clamp the workpiece. The chucking voltage during processing is controlled in response to flow rate of a heat transfer fluid flowing to the chuck to maintain the chucking force and the flow rate approximately constant. A reverse polarity voltage applied to the chuck at the end of processing assists in dechucking. The workpiece temperature is maintained at a high value at the end of processing to assisting in dechucking. Peak current flowing through the chuck during workpiece lifting from the chuck controls the amplitude and/or duration of the reverse polarity voltage during the next dechucking operation. An inert plasma in the chamber removes residual charge from the workpiece after workpiece lifting from the chuck.

Abstract translation: 在真空等离子体处理室中处理的玻璃工件通过在处理过程中逐渐减小夹紧电压而从单极静电夹盘脱开，同时保持足够高的电压以夹紧工件。 加工过程中的夹紧电压响应于流向卡盘的传热流体的流量而被控制，以保持夹紧力和流量大致恒定。 在加工结束时施加在卡盘上的反向极性电压有助于去夹紧。 在加工结束时，工件温度保持在较高值，以帮助脱开夹紧。 在工件从卡盘上提升期间流过卡盘的峰值电流在下一次脱开操作期间控制反极性电压的幅度和/或持续时间。 工件从卡盘上提升后，腔室内的惰性等离子体会去除工件上的残余电荷。

公开(公告)号：JP2010050464A

公开(公告)日：2010-03-04

申请号：JP2009206036

申请日：2009-09-07

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： HOWALD ARTHUR M ,  HOLLAND JOHN P

IPC: B23Q3/15 ,  H01L21/683 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H02N13/00

CPC classification number: H01L21/6833 ,  Y10T279/23

Abstract: PROBLEM TO BE SOLVED: To provide a new improved method and a new improved apparatus for chucking and dechucking a workpiece electrostatically in a vacuum plasma processor. SOLUTION: A glass workpiece 32 processed in a vacuum plasma processing chamber 10 is dechucked by gradually reducing the chucking voltage during processing while maintaining the voltage high enough to clamp the workpiece. The chucking voltage during processing is controlled in response to chucking force and flow rate of a heat transfer fluid flowing to the chuck. A reverse polarity voltage applied to the chuck at the end of processing assists in dechucking. The workpiece temperature is maintained at a high value at the end of processing. A peak current flowing through the chuck during workpiece lifting from the chuck controls the amplitude and/or duration of the reverse polarity voltage during the next dechucking operation. An inert plasma in the chamber 10 removes a residual charge from the workpiece 32 after workpiece lifting from the chuck 30. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于在真空等离子体处理器中静电吸附和去除工件的新的改进方法和新的改进的装置。 解决方案：在真空等离子体处理室10中处理的玻璃工件32通过在加工期间逐渐降低夹紧电压而被压缩，同时保持足够高的电压来夹紧工件。 响应于流入卡盘的传热流体的夹紧力和流量来控制加工期间的夹紧电压。 在加工结束时施加到卡盘的反极性电压有助于脱扣。 在加工结束时，工件温度保持在高值。 在卡盘的工件提升期间流过卡盘的峰值电流控制下一次脱扣操作期间的反极性电压的幅度和/或持续时间。 室10中的惰性等离子体在工件从卡盘30提起之后，从工件32中除去剩余的电荷。（C）2010，JPO＆INPIT

公开(公告)号：JP2010062570A

公开(公告)日：2010-03-18

申请号：JP2009205952

申请日：2009-09-07

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： HOWALD ARTHUR M ,  HOLLAND JOHN P

IPC: B23Q3/15 ,  H01L21/683 ,  C23C16/458 ,  C23C16/50 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H02N13/00

CPC classification number: H01L21/6833 ,  Y10T279/23

Abstract: PROBLEM TO BE SOLVED: To provide a reliable method and apparatus for electrostatically chucking and dechucking a workpiece in a vacuum plasma processor. SOLUTION: A glass workpiece 32 processed in a vacuum plasma processing chamber 10 is dechucked from a monopolar electrostatic chuck 30 by gradually reducing a chucking voltage during processing while maintaining the voltage high enough to clamp the workpiece. The chucking voltage during processing is controlled in response to a flow rate of a heat transfer fluid flowing to the chuck to maintain a chucking force and the flow rate substantially constant. A reverse polarity voltage applied to the chuck at an end of the processing assists in dechucking. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于在真空等离子体处理器中静电吸附和脱扣工件的可靠方法和装置。 解决方案：在真空等离子体处理室10中处理的玻璃工件32通过在保持电压足够高以夹持工件的同时在加工期间逐渐降低夹持电压从单极静电卡盘30中被拔出。 响应于流向卡盘的传热流体的流量来控制加工期间的夹紧电压，以保持卡紧力并且流速基本上恒定。 在加工结束时施加到卡盘的反极性电压有助于脱扣。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2010021559A

公开(公告)日：2010-01-28

申请号：JP2009184433

申请日：2009-08-07

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： HOWALD ARTHUR M ,  HOLLAND JOHN P

IPC: C23C16/458 ,  H01L21/683 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H02N13/00

CPC classification number: H01L21/67242 ,  H01L21/6831 ,  H01L21/6833 ,  H02N13/00 ,  Y10T307/858

Abstract: PROBLEM TO BE SOLVED: To provide an improved method and apparatus for electrostatically chucking and dechucking a workpiece in a vacuum plasma processor. SOLUTION: A glass workpiece 32 being processed in a vacuum plasma processing chamber is dechucked from a monopolar electrostatic chuck by gradually reducing chucking voltage during the processing while voltage is maintained high enough to clamp the workpiece. A reverse polarity voltage, which is applied to the chuck at a final step of the processing, assists the dechucking. The workpiece temperature is maintained at a high value at the final step of the processing in order to assist the dechucking. Peak current flowing through the chuck during lifting of the workpiece from the chuck controls the amplitude and/or duration of the reverse polarity voltage during the next dechucking operation. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于在真空等离子体处理器中静电夹持和去除工件的改进的方法和装置。 解决方案：在真空等离子体处理室中处理的玻璃工件32通过在处理期间逐渐减小夹持电压从单极静电卡盘中被拔出，同时电压保持足够高以夹紧工件。 在处理的最后步骤中施加到卡盘的反向极性电压有助于脱扣。 在加工的最后步骤中，工件温度保持在高的值，以帮助脱帽。 在从卡盘提起工件期间流过卡盘的峰值电流在下一个脱扣操作期间控制反向极性电压的幅度和/或持续时间。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：WO9967808A9

公开(公告)日：2000-11-02

申请号：PCT/US9914069

申请日：1999-06-22

Applicant: LAM RES CORP

Inventor： HOWALD ARTHUR M ,  CHEN ANTHONY L ,  SCHOEPP ALAN M

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065

CPC classification number: H01J37/32467 ,  H01J37/321 ,  H01J37/32477

Abstract: A window of a plasma processing chamber. The window includes a first dielectric portion having a first electrical thickness and a first resistivity to an etching plasma that is formed within the plasma processing chamber. There is further included a second dielectric portion disposed within the first dielectric portion. The second dielectric portion has a second electrical thickness that is less than the first electrical thickness. The second dielectric portion is formed of a substantially transparent material and has a second resistivity to the etching plasma. The second resistivity is higher than the first resistivity.

Abstract translation: 等离子体处理室的窗口。 窗口包括具有第一电气厚度和形成在等离子体处理室内的蚀刻等离子体的第一电阻率的第一电介质部分。 还包括设置在第一电介质部分内的第二电介质部分。 第二电介质部分具有小于第一电气厚度的第二电气厚度。 第二电介质部分由基本上透明的材料形成，并且对蚀刻等离子体具有第二电阻率。 第二电阻率高于第一电阻率。