Abstract:
A method for processing a plurality of substrates in a plasma processing chamber of a plasma processing system, each of the substrate being disposed on a chuck and surrounded by an edge ring during the processing. The method includes processing a first substrate of the plurality of substrates in accordance to a given process recipe in the plasma processing chamber. The method further includes adjusting, thereafter, a capacitance value of a capacitance along a capacitive path between a plasma sheath in the plasma processing chamber and the chuck through the edge ring by a given value. The method additionally includes processing a second substrate of the plurality of substrates in accordance to the given process recipe in the plasma processing chamber after the adjusting, wherein the adjusting is performed without requiring a change in the edge ring.
Abstract:
A SUBSTRATE SUPPORT (12, 14) USEFUL FOR A PLASMA PROCESSING APPARATUS INCLUDES A METALLIC HEAT TRANSFER MEMBER (48) AND AN OVERLYING ELECTROSTATIC CHUCK (34, 50) HAVING A SUBSTRATE SUPPORT SURFACE. THE HEAT TRANSFER MEMBER (48) INCLUDES ONE OR MORE PASSAGE (76) THROUGH WHICH A LIQUID IS CIRCULATED TO HEAT AND/OR COOL THE HEAT TRANSFER MEMBER (48). THE HEAT TRANSFER MEMBER (48) HAS A LOW THERMAL MASS AND CAN BE RAPIDLY HEATED AND/OR COOLED TO A DESIRED TEMPERATURE BY THE LIQUID, SO AS TO RAPIDLY CHANGE THE SUBSTRATE TEMPERATURE DURING PLASMA PROCESSING. THE MOST ILLUSTRATIVE DRAWING IS
Abstract:
A chuck for a plasma processor comprises a temperature-controlled base, a thermal insulator, a flat support, and a heater. The temperature-controlled base is controlled in operation a temperature below the desired temperature of a workpiece. The thermal insulator is disposed over at least a portion of the temperature-controlled base. The flat support holds a workpiece and is disposed over the thermal insulator. A heater is embedded within the flat support and/or mounted to an underside of the flat support. The heater includes a plurality of heating elements that heat a plurality of corresponding heating zones. The power supplied and/or temperature of each heating element is controlled independently. The heater and flat support have a combined temperature rate change of at least 1° C. per second.
Abstract:
A chuck for a plasma processor comprises a temperature-controlled base, a thermal insulator, a flat support, and a heater. The temperature-controlled base is controlled in operation a temperature below the desired temperature of a workpiece. The thermal insulator is disposed over at least a portion of the temperature-controlled base. The flat support holds a workpiece and is disposed over the thermal insulator. A heater is embedded within the flat support and/or mounted to an underside of the flat support. The heater includes a plurality of heating elements that heat a plurality of corresponding heating zones. The power supplied and/or temperature of each heating element is controlled independently. The heater and flat support have a combined temperature rate change of at least 1° C. per second.
Abstract:
A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a metal surface such as aluminum or aluminum alloy, stainless steel, or refractory metal coated with a phosphorus nickel plating and an outer ceramic coating such as alumina, silicon carbide, silicon nitride, boron carbide or aluminum nitride. The phosphorus nickel plating can be deposited by electroless plating and the ceramic coating can be deposited by thermal spraying. To promote adhesion of the ceramic coating, the phosphorus nickel plating can be subjected to a surface roughening treatment prior to depositing the ceramic coating.
Abstract:
A METHOD OF CLEANING AN ESC COMPRISES IMMERSING A CERAMIC SURFACE (70) OF THE ESC (60) IN DIELECTRIC LIQUID (80); SPACING THE CERAMIC SURFACE (70) OF THE ESC (60) APART FROM A CONDUCTIVE SURFACE (50) SUCH THAT THE DIELECTRIC LIQUID (80) FILLS A GAP BETWEEN THE CERAMIC SURFACE (70) OF THE ESC (60) AND THE CONDUCTIVE SURFACE (50); AND SUBJECTING THE DIELECTRIC LIQUID (80) TO ULTRASONIC AGITATION WHILE SIMULTANEOUSLY APPLYING VOLTAGE TO THE ESC (60).