公开(公告)号：JPS6237930A

公开(公告)日：1987-02-18

申请号：JP17796385

申请日：1985-08-13

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TAKASU YASUHIRO ,  TODOKORO YOSHIHIRO

IPC: H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To form a fine pattern with high dimensional accuracy, by forming a resist pattern whose cross-sectional form is nearly vertical, by a method wherein the distribution of the electron absorption energy in a resist film is made uniform by the effect of a dual exposure applying both a high acceleration voltage and a low acceleration voltage. CONSTITUTION:After a resist film 6 sensitive to electron beams is coated on a semiconductor substrate 3, a predefined pattern is drawn on a resist film 6 by electron beams with acceleration voltage to penetrate the resist film 6. Then, the pattern is drawn on the resist film 6 by the electron beams 8 with acceleration voltage insufficient to penetrate the resist film 6. Thus the distribution of electron absorption energy in the resist film 6 is made uinform. Thereby, resist pattern 9 whose cross-sectional form is nearly vertical is formed, and a fine pattern with high dimensional accuracy is obtained.

公开(公告)号：JPS61166130A

公开(公告)日：1986-07-26

申请号：JP696485

申请日：1985-01-18

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TODOKORO YOSHIHIRO

IPC: H01L21/027 ,  G03F7/20 ,  G03F7/26 ,  G03F7/40 ,  H01L21/30 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3205

Abstract: PURPOSE:To form a resist pattern with a resist opening at high precision of sidewall gradient angle and pattern width, by a method wherein the space of resist region around the periphery of resist opening is adjusted by means of specified heat treatment and ultraviolet-ray exposure. CONSTITUTION:A photomask 15 covering a resist opening 14 with apparent opposing region to wider specified region is arranged above a photoresist film 13 and if the photomask 15 is exposed to ultraviolet rays 16, 350-450nm, the heat resistance may be deteriorated comparing with that in the part not exposed. Later if the photoresist 15 is heattreated at the temperature of 100-150 deg.C, only the resist part exposed to ultraviolet rays starts to flow while the resist part not exposed is not subject to any thermal deformation at all. Resultantly, the gradient angle of sidewall surface to be formed and the pattern width of resist opening 17 may be controlled at high precision by means of adjusting the space of ultraviolet ray region above the resist layer 13 around the periphery of opening 17.

公开(公告)号：JPS6170719A

公开(公告)日：1986-04-11

申请号：JP19287584

申请日：1984-09-14

Applicant: Matsushita Electronics Corp

Inventor： YAMASHITA HIROSHI ,  TODOKORO YOSHIHIRO

IPC: C08F20/14 ,  C08F20/00 ,  G03F7/26 ,  G03F7/30 ,  H01L21/027 ,  H01L21/30

CPC classification number: H01L21/30

Abstract: PURPOSE:To form an ultrafine pattern by exposing a positive type electron beam resist with large exposure amount, and then developing it only with isopropyl alcohol. CONSTITUTION:After a positive type electron beam resist using as a developer mixture solution of isopropyl alcohol and other organic solvent is exposed in the exposure amount of twice or more than the exposure amount of the case of using a developer, a pattern developed with the isopropyl alcohol is formed. Thus, a sensitivity line near the ideal characteristics can be performed to form an ultrafine resist pattern.

Abstract translation: 目的：通过暴露大量曝光量的正型电子束抗蚀剂，然后仅用异丙醇显影，形成超细纹。 构成：在以异丙醇和其它有机溶剂的显影剂混合溶液的正型电子束抗蚀剂的曝光量暴露于使用显影剂的情况下的曝光量的两倍或更多时，用异丙基 酒精形成。 因此，可以执行靠近理想特性的灵敏度线以形成超细抗蚀剂图案。

公开(公告)号：JPS60217628A

公开(公告)日：1985-10-31

申请号：JP7345284

申请日：1984-04-12

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TODOKORO YOSHIHIRO

IPC: H01L21/027 ,  G03F7/00 ,  G03F7/20 ,  G03F7/26 ,  H01L21/30

Abstract: PURPOSE:To obtain a superminute pattern by performing only exposure to light, application of a photo resist, and development by a method wherein a first photo resist film having sensitivity to far ultraviolet rays is formed, and moreover after a second photo resist film having sensitivity to ultraviolet rays is formed, a part of the surface of the first photo resist film is exposed, and exposure to far ultraviolet rays and development are performed. CONSTITUTION:A photo resist is applied on a semiconductor substrate 1, and after it is prebaked, the prescribed figure 2 is formed according to the exposure and development process, and postbaking is performed. After then, a PMMA photo resist 3 is applied, a resist 4 is applied thereon moreover, and prebaking is performed to complete a three layer resist construction. The surface of the resist 4 is flattened, and then, the surface of the resist 4 is removed using a developer, and the surface of the PMMA resist 3 on the protruded part is exposed. Then, when the whole surface of the sample is exposed wholly using far ultraviolet rays of 300nm wavelength or less, the PMMA resist 5 directly under the resist 4 is not exposed to light, and the PMMA resist 6 of the exposed surface part is exposed to light. By removing the PMMA resist 6, namely the exposed part of the same resist, a minute pattern 7 of size to be equal to thickness of the same resist film can be formed.

公开(公告)号：JPS6060649A

公开(公告)日：1985-04-08

申请号：JP16966283

申请日：1983-09-14

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： YAMASHITA SUSUMU ,  TODOKORO YOSHIHIRO ,  OOKUMA TOORU

IPC: G03C1/52 ,  G03F1/00 ,  G03F1/54 ,  G03F7/016 ,  G03F7/038 ,  H01L21/027

Abstract: PURPOSE:To obtain a photomask which is manufacturable with an easy process, permits formation of finer mask patterns and is suitable as a light shielding material for a UV light source. CONSTITUTION:Diazo type photoresist 2 is coated by spin coating, etc. on a glass base plate or quartz base plate 1. The photoresist 2 is then patterned by photoexposing or electron exposing. The resist is then heat treated at >=270 deg.C, by which the intended photomask suitable as a light shielding material for a light source of 300-450nm wavelength is obtd. The photomask is formed more easily by the above-mentioned method than by the conventional method which forms the photomask by forming a chromium film by vapor deposition, sputtering, etc. and dry etching the film.

公开(公告)号：JPS59145528A

公开(公告)日：1984-08-21

申请号：JP2003383

申请日：1983-02-09

Applicant: Matsushita Electronics Corp

Inventor： YAMASHITA HIROSHI ,  TODOKORO YOSHIHIRO

IPC: H01L21/302 ,  H01L21/3065

CPC classification number: H01L21/302

Abstract: PURPOSE:To enable to form the thin film pattern with rectangular cross section by a method wherein an aperture pattern having the prescribed cross section is formed on the resist film located on a substrate, and after a thin film has been formed on the whole surface, an etching is performed on the thin film until the uppermost part of the resist film is exposed and said resist film is removed. CONSTITUTION:A resist material layer 2 of 1mum in thickness is rotary-painted on a silicon substrate 1, and a pattern is formed after exposure and development processes have been performed. Then, an organic silicon compound film of 1mum in thickness is formed by rotary-painting an organic solution containing silicon compound, said silicon compound film is dried up and sintered, and a silicon oxide film 3 is formed. The silicon oxide film 3 is removed as deep as to the surface of the resist material layer 2 by performing a dry etching. C3F8, for example, is used for this dry etching with the degree of vacuum of 10 Torr and the RF power of 300W. Then, the microscopic pattern of silicon oxide film 3 is obtained by removing the resist material layer 3 using aceton boil or oxygen ashing.

Abstract translation: 目的：为了能够通过一种方法形成具有矩形截面的薄膜图案，其中在位于基板上的抗蚀剂膜上形成具有规定横截面的孔径图案，并且在整个表面上形成薄膜之后， 在薄膜上进行蚀刻，直到抗蚀剂膜的最上部露出，除去抗蚀剂膜。 构成：在硅基板1上旋转涂覆1um厚的抗蚀剂材料层2，并且在曝光和显影处理已经进行之后形成图案。 然后，通过旋转涂覆含有硅化合物的有机溶液形成厚度为1μm的有机硅化合物膜，将所述硅化合物膜干燥并烧结，形成氧化硅膜3。 通过进行干蚀刻，将氧化硅膜3除去与抗蚀剂材料层2的表面相同的深度。 例如，C3F8用于这种干法蚀刻，真空度为10 -3 Torr，RF功率为300W。 然后，通过使用丙酮沸腾或氧化灰化除去抗蚀剂材料层3，获得氧化硅膜3的微观图案。

公开(公告)号：JPS5929421A

公开(公告)日：1984-02-16

申请号：JP14004582

申请日：1982-08-11

Applicant: Matsushita Electronics Corp

Inventor： TODOKORO YOSHIHIRO

IPC: H01L21/027 ,  H01L21/30

CPC classification number: G03F1/20

Abstract: PURPOSE:To easily form with a high accuracy a mask for ion beam lithography which is free from multiple scattering and high in resolution, by forming a predetermined pattern of a metal on a silicon single crystal thin film grown on a sapphire substrate, and then selectively removing the part of the substrate corresponding to the pattern part. CONSTITUTION:An Si single crystal thin film 5 with a thickness of 0.5mum is grown on the surface of a sapphire substrate 4. Then, a predetermined pattern 6 is formed of an Au evaporated film by the lift-off or dry etching technique. Finally, a part of the sapphire substrate 4, that is, the part thereof corresponding to the pattern 6 part is selectively etched by the use of hot phosphoric acid. Since this etching solution does not dissolve Si, the Si thin film 5 is left without being etched, and the sapphire substrate 4 is left on the periphery of the pattern 6 part to serve as a frame member. If an ion beam lithography is effected using this mask, since incident ions pass through the Si by means of channeling, there will be no scattering, and the resolution will improve. According to this manufacturing method, the Si thin film 5 as an ion-transmitting part is formed by the epitaxial growth, therefore, the thin film can be formed with a high accuracy.

Abstract translation: 目的：通过在蓝宝石衬底上生长的硅单晶薄膜上形成预定的金属图案，能够高精度地形成离子束光刻用掩模，该掩模不含多次散射和高分辨率，然后选择性地 去除对应于图案部分的基板的一部分。 构成：在蓝宝石基板4的表面上生长厚度为0.5μm的Si单晶薄膜5.然后，通过剥离或干蚀刻技术，由Au蒸镀薄膜形成预定图案6。 最后，通过使用热磷酸选择性地蚀刻蓝宝石衬底4的一部分，即其对应于图案6部分的部分。 由于该蚀刻溶液不溶解Si，因此不会蚀刻Si薄膜5，蓝宝石基板4残留在图案6的周围，作为框架部件。 如果使用该掩模进行离子束光刻，由于入射离子通过沟道通过Si，所以不会有散射，分辨率将会提高。 根据该制造方法，通过外延生长形成作为离子透射部的Si薄膜5，因此能够高精度地形成薄膜。

公开(公告)号：JPS57183027A

公开(公告)日：1982-11-11

申请号：JP6731181

申请日：1981-05-02

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TODOKORO YOSHIHIRO

IPC: H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To contrive to enlarge quantity of reflected electrons and to enhance the S/N ratio of a semiconductor device by a method wherein the prescribed figure is formed on a semiconductor substrate with a material of high melting point containing a high melting point material, and the figure thereof is scanned with the electron beam to perform positioning afterwards. CONSTITUTION:After an oxide film 7 is formed on the Si substrate, an MoSi2 film, for example, is formed as the film containing the high melting point metal. The film thereof is the film having the melting point being the maximum treatment temperature or more, the melting point of 200 deg.C or more, for example. Then the figure for positioning consisting of the film thereof is formed. After then, scanning of the figure is performed with the electron beam, and positioning is performed by detecting the reflected electrons therefrom. Because a transition metal of high melting point metal, etc., exhibits large quantity of reflected electrons as compared with Si generally, even when unevenness is generated on the film 7 at the neighborhood of the figure 8, the waveform of reflected electrons to be detected receives no influence therefrom completely. Moreover because no protection is needed when etching of the figure 8 is to be performed, curtailment of exposing hours can be attained.

公开(公告)号：JPS55105326A

公开(公告)日：1980-08-12

申请号：JP1371179

申请日：1979-02-07

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TODOKORO YOSHIHIRO ,  TAKEDA SETSUKO ,  KAWAMOTO YOSHIHISA

IPC: H01L29/812 ,  H01L21/027 ,  H01L21/28 ,  H01L21/30 ,  H01L21/306 ,  H01L21/338

Abstract: PURPOSE:To make formation of T-shaped electrode in the cross section easy by a method wherein, when the electrode of a semiconductor device is processed by means of electron beam exposure, two layers of electron beam resist films which have different sensitivity each other for each electron beam is used for exposition. CONSTITUTION:The solution of 200 centi-poise viscosity which is processed by mixing polymethyl methacrylate and xylene by the ratio 1:2 in volume is applied by rotation, and it is the 1st electron beam resist film 12. Furthermore on this film the solution consisted of methacrylic acid and crosslinking agent is applied by rotation and it is the 2nd electron beam resist film 13. Next after pre-baking the films, by exposition to the electron beam and developing the films in the solution consisted of methyl isobutyl ketone and isopropyl alchol in volume ratio 1:3, under-cutted openings 14, 15 are obtained at each films 12, 13. Thus because the upper opening is larger than the lower one, deposition of metal makes the electrode 16 which has the overhanging part 18.

公开(公告)号：JP2583986B2

公开(公告)日：1997-02-19

申请号：JP17956988

申请日：1988-07-19

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI ,  TODOKORO YOSHIHIRO

IPC: G03F7/11 ,  G03F7/40 ,  H01L21/027 ,  H01L21/30