公开(公告)号：JPH10221837A

公开(公告)日：1998-08-21

申请号：JP2799197

申请日：1997-02-12

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI

IPC: G03F1/68 ,  G03F1/70 ,  G03F7/20 ,  H01L21/027 ,  G03F1/08

Abstract: PROBLEM TO BE SOLVED: To embody a photomask for projection alignment capable of controlling a focus position to a wide range with high accuracy by utilizing production stages for the conventional photomasks and to form desired patterns on a semiconductor substrate having differences in level by using this photomask. SOLUTION: At least one of the opening patterns of the photomask for projection alignment are replaced with the microopening pattern arranged symmetrically in the peripheral parts of the opening patterns. As a result, the focal position of the light transmitted through the microopening patterns replaced in the state that these patterns are arranged symmetrically in the peripheral part of the opening pattern is made to exist in the place deviated from the intrinsic focal position of the light transmitted through the opening pattern.

公开(公告)号：JP2512047B2

公开(公告)日：1996-07-03

申请号：JP31594487

申请日：1987-12-14

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TODOKORO YOSHIHIRO ,  WATANABE HISASHI

IPC: H01L21/265 ,  H01L21/336 ,  H01L29/78

公开(公告)号：JPH06242595A

公开(公告)日：1994-09-02

申请号：JP2591493

申请日：1993-02-16

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI

IPC: G03F1/36 ,  G03F1/70 ,  H01L21/027 ,  G03F1/08

Abstract: PURPOSE:To provide a mask for photoexposure for production of semiconductor integrated circuits capable of forming transfer patterns faithful to a design pattern without largely increasing a data quantity. CONSTITUTION:The mask 14 for photoexposure is produced by extracting a part having a basic periodic structure among design patterns 11 of the semiconductor integrated circuits, forming auxiliary pattern data provided with the very small auxiliary patterns 13 which are not transferred to a semiconductor substrate above in places corresponding to the corner parts of the main pattern 12 of the basic periodic structure and synthesizing this auxiliary pattern data and the main pattern data corresponding to the design pattern 11. Since the auxiliary patterns 13 are formed in the places corresponding to the corner parts of the main pattern 12 including the points varying from the periodic structure, the transfer patterns faithful to the design pattern 11 are formed while the increase in the data quantity by addition of the auxiliary patterns 13 is minimized.

公开(公告)号：JPH03148660A

公开(公告)日：1991-06-25

申请号：JP28742189

申请日：1989-11-06

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI

IPC: G03F7/004 ,  G03F7/039 ,  H01L21/027

Abstract: PURPOSE:To allow development without generating corrosion of Al by developing a prescribed resist with an org. solvent. CONSTITUTION:The resist 1 contg. an alkali-soluble resin (e.g.: novolak resin), a dissolution restrainer (e.g.: melamine compd.) and acid generator (e.g.: biphenyl compd.) is applied on the surface of a substrate deposited with a thin film 2 of Al by evaporation on an Si substrate 3 and is heat treated. The resist is then exposed with an electron beam 4 and an org. solvent (e.g.: isobutyl alcohol) is injected from a nozzle 5 to dissolve the unexposed parts. The resist is then rinsed and resist patterns 8 are formed. The patterns are developed by the org. solvent, by which the patterns 8 are formed without corroding the film 2.

公开(公告)号：JPH02269354A

公开(公告)日：1990-11-02

申请号：JP8983189

申请日：1989-04-11

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI

IPC: G03F7/38 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30

Abstract: PURPOSE:To obtain resist patterns with which a high through-put and high resolution are compatible by subjecting the resist on a substrate to an electron beam exposing to the prescribed patterns and bringing a graft polymerizable monomer having high UV absorption into reaction in a vapor phase or liquid phase and then subjecting the resist to the full-surface exposing by the UV rays. CONSTITUTION:The prescribed patterns are exposed on the resist 2 on the substrate 1 by the electron beam 4 and the graft polymerizable monomer 3 is brought into reaction in the vapor phase or liquid phase; thereafter, the resist is subjected to the full-surface exposing by the UV rays 5 and is developed to form the resist patterns. The active points generated by the irradiation of the electron beam are effectively utilized in the graft polymn. used in this method and, therefore, the sensitivity is improved. Since the difference in solubility between exposed parts and unexposed parts is generated not by the graft polymn. but by the exposing with the UV rays, the graft polymn. is merely necessitated to arise on the resist surface alone. The patterns are defined on the resist surface having the high contrast of the energy absorption and, therefore, the high resolution is maintained. The high through-put and the high resolution are compatibly obtd. in this way.

公开(公告)号：JPH01320421A

公开(公告)日：1989-12-26

申请号：JP15327088

申请日：1988-06-21

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI ,  TODOKORO YOSHIHIRO

IPC: G01B15/00 ,  G01N23/225 ,  G01R31/302 ,  H01L21/66

Abstract: PURPOSE:To highly accurately inspect a pattern by using a charged particle beam after forming a conductive high polymer film on the surface or rear of a substrate to be inspected. CONSTITUTION:A conductive high polymer film 3 of polystyrene ammonium sulfoxide is rotationally applied to the whole surface of a photomask of chrome films 2 forming a pattern on a crystal glass substrate 1 to a thickness of 0.3mum, then, the photomask is heat-treated for 30 minutes at 100 deg.C. The photomask covered with the film 3 is inspected by scanning the photomask with an electron beam and detecting reflected electrons. Therefore, since electrostatic charging of incident electrons can be eliminated even when the pattern formed on the insulating plate is inspected and measured with the charged particle beam, highly accurate inspection can be carried out.

公开(公告)号：JPS6321831A

公开(公告)日：1988-01-29

申请号：JP16696886

申请日：1986-07-16

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI ,  TODOKORO YOSHIHIRO

IPC: H01L21/302 ,  H01L21/027 ,  H01L21/30 ,  H01L21/3065

Abstract: PURPOSE:To eliminate a pattern conversion error by forming a predetermined hole in a resist film, then retaining a second thin film formed on the whole surface in the hole of the resist film, removing the other, and then selectively removing the first thin film with the second film as a mask. CONSTITUTION:A first thin film 2 is formed of an organic material on a substrate 1, coated with a resist 3 thereon, and a predetermined pattern having holes is formed on the resist 3 by means of exposing and developing. Then, it is coated with a second thin film 4 to substantially flatten the surface. Thereafter, the film 4 is etched until the surface of the resist 3 is exposed to obtain the pattern of the film 4 in the shape buried in the hole of the resist 3. Eventually, with the film 4 as a mask the film 2 is etched to obtain the film 4 in the same pattern. Thus, a pattern conversion error is eliminated in case of etching to improve the pattern accuracy.

公开(公告)号：JPS6290932A

公开(公告)日：1987-04-25

申请号：JP22989185

申请日：1985-10-17

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI ,  TAKASU YASUHIRO ,  TODOKORO YOSHIHIRO

IPC: H01L21/30 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065

Abstract: PURPOSE:To readily form negative resist pattern of novolac resin by means of a general ultraviolet exposing unit by bonding the novolac resin onto a semiconductor substrate, exposing the prescribed portion to ultraviolet light or far ultraviolet light, and then developing the prescribed portion with isoamyl acetate. CONSTITUTION:A novolac resin 2 on a semiconductor substrate 1 is emitted with ultraviolet light 3, and further dipped in isoamyl acetate to form a negative pattern 4. As an embodiment, when a pattern is formed on novolac resist OFPR-800, an Si substrate is covered with OFPR-800 1.5mum thick, and prebaked at 85 deg.C for 30min. Thereafter, it is conact-exposed for 5 min by means of an ultraviolet light source (100mW/cm ) with a photomask, and dipped in isoamyl acetate to form a negative resist pattern.

公开(公告)号：JPS6256569A

公开(公告)日：1987-03-12

申请号：JP19632885

申请日：1985-09-05

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： WATANABE HISASHI

IPC: C23C14/24

Abstract: PURPOSE:To uniformly heat a substrate with a simple device by providing a substrate heating heater and a heater for vapor deposition in the vicinity of the lower central part of a vessel, connecting both heaters to the same electric power source and making power supply to be changed over. CONSTITUTION:A heater 2 for vapor deposition and a substrate heating heater 3 are provided at the next to each other at the lower central part in a bell jar vessel 1, and the power supply from a current source 5 can be changed over by a heater changeover switch 4. A tungsten filament is used for the substrate heating heater 3 and an alumina-coated crucible is used as the heater 2 for vapor deposition. The distance between a substrate 6 and the heaters 2 and 3 is regulated to about 30cm. By this structure, the inside of the vessel 1 is evacuated to about 2X10 Torr and an electric current is passed through the substrate heater 3 to heat the substrate 6 by heat radiation. Then the supply current is changed over to the heater 2 for vapor deposition and vapor deposition is conducted.

公开(公告)号：JPS6237932A

公开(公告)日：1987-02-18

申请号：JP17796185

申请日：1985-08-13

Applicant: MATSUSHITA ELECTRONICS CORP

Inventor： TODOKORO YOSHIHIRO ,  WATANABE HISASHI

IPC: H01L21/30 ,  G03F7/20 ,  G03F7/38 ,  H01L21/027

Abstract: PURPOSE:To form a very minute resist pattern, by forming a specified resist pattern having a specified shape on a substrate, projecting plasma including F or Cl, etching the resist with O2 gas in an anisotropic method, and thereafter immersing the pattern in an organic solution. CONSTITUTION:A resist pattern 2 is formed on a semiconductor substrate 1. Plasma is projected on the resist pattern 2 by using a cylindrical plasma etching device and a gas comprising C2HCl3/5% O2 at 0.4Torr for 1min at plasma generating power of 15W. Then, by using a reactive ion etching device, etching is performed with O2 gas, and the surface of the resist pattern 2 is removed by 0.1mum or more in an anisotropic mode. During this period, the etching is performed for 1min under the conditions of pressure of 15mTorr, RF power of 175W and O2 gas flow rate of 40secM. Finally the pattern is immersed (5) in isoamyl acetate for 10sec, and a very minute resist pattern 4, whose pattern width is 0.1mum, is formed.