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    LIGHTING DEVICE
    15.
    发明申请
    LIGHTING DEVICE 审中-公开
    照明灯装置，

    公开(公告)号：WO2014095921A3

    公开(公告)日：2014-11-27

    申请号：PCT/EP2013076974

    申请日：2013-12-17

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

    Inventor： BRICK PETER ,  KUNZ THORSTEN

    IPC: F21V8/00

    CPC classification number: G02B6/0078 ,  G02B6/0055

    Abstract: A lighting device (100) is specified, comprising - a housing (1) having a light exit surface (2), - a light-emitting semiconductor component (10), and - an optical waveguide (20) having a first end face (21), a second end face (22) situated opposite the first end face (21), and a lateral surface (23) connecting the first and second end faces (21, 22), wherein the first and/or the second end face (21, 22) are/is embodied at least in places as a light entrance surface (24), - the light-emitting semiconductor component (10) and the optical waveguide (20) are arranged within the housing (1), - the light-emitting semiconductor component (10) during operation emits light (5) which largely enters into the optical waveguide (20) through the light entrance surface (24) of the optical waveguide (20), - the light (5) in the optical waveguide (20) at least partly emerges through the lateral surface (23) of the optical waveguide (20), and - the light (5) that has emerged through the lateral surface (23) leaves the housing (1) through the light exit surface (2) of the housing (1).

    Abstract translation: 它是设置有发光器件（100）， - 一个外壳（1），具有光出射面（2）， - 发光半导体器件（10），以及 - 光导（20），其具有第一端面（21），所述第一端面之一（ 21）相对的第二端面（22）和第一和第二端面（21,22），其连接侧表面（23），其特征在于，形成第一和/或第二端面（21，22）至少在某些地方（作为光入射面24）， - 发光半导体器件（10）和所述壳体（1）内的光导体（20）布置， - 在工作光（5）辐射，所述发光半导体装置（10），其（对于通过光导20的光入射面（24）在大多数情况下 ）进入到光导（20）， - 所述光（5）在所述光导（10）至少部分地由所述光导体的圆周表面（23）（20）出现，以及 - （由周向表面23）ausgetret 烯的光（5）的壳体（1）离开通过光出射面（2）的壳体（1）。

    SURFACE LIGHT GUIDE AND LUMINAIRE
    17.
    发明申请
    SURFACE LIGHT GUIDE AND LUMINAIRE 审中-公开
    AREA光纤和光

    公开(公告)号：WO2011131434A3

    公开(公告)日：2012-01-12

    申请号：PCT/EP2011054226

    申请日：2011-03-21

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  BRICK PETER ,  MUSCHAWECK JULIUS

    Inventor： BRICK PETER ,  MUSCHAWECK JULIUS

    IPC: G02B6/00

    CPC classification number: G02B6/0041 ,  G02B6/0035 ,  G02B6/0046 ,  G02B6/0061 ,  G02B6/0068

    Abstract: In at least one embodiment of the surface light guide (1), the surface light guide comprises at least one scattering element (5) for scattering light, wherein a decoupling coefficient is caused by the scattering element (5). The decoupling coefficient is set in a varying fashion along a main light-guiding direction (z). In a direction (L) perpendicular to the main sides (2) of the surface light guide (1), the opacity value is no more than 0.10, the transmission coefficient is at least 0.75 and the quotient of the minimum light density and maximum light density seen over a continuous emitting area (A) of at least one of the main sides (2) is at least 0.75.

    Abstract translation: 在引导表面的光的至少一个实施例（1）的该具有至少一个散射装置（5）用于散射光，其特征在于，一个Auskoppelkoeffizient被散射装置引起的（5）。 所述Auskoppelkoeffizient设置沿Hauptlichtleitrichtung（z）的变化。 在垂直于所述导向面的光的主面（2）的方向（L）（1）是至多0.10的浊度值，至少0.75的透射系数和最小亮度和最大亮度的比，看到在连续发射区域（A 主面）的至少一个（选择2），至少0.75。

    LASER LIGHT SOURCE
    18.
    发明申请
    LASER LIGHT SOURCE 审中-公开
    激光光源

    公开(公告)号：WO2009080011A2

    公开(公告)日：2009-07-02

    申请号：PCT/DE2008002123

    申请日：2008-12-16

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  REILL WOLFGANG ,  TAUTZ SOENKE ,  BRICK PETER ,  STRAUSS UWE

    Inventor： REILL WOLFGANG ,  TAUTZ SOENKE ,  BRICK PETER ,  STRAUSS UWE

    IPC: H01S5/10 ,  H01S5/22 ,  H01S5/40

    CPC classification number: H01S5/22 ,  H01S5/1017 ,  H01S5/1064 ,  H01S5/4031

    Abstract: A laser light source especially comprises a semiconductor layer sequence (10) having an active layer with at least two active zones (45) that are adapted to emit, when operating, electromagnetic radiation via a lateral face of the semiconductor layer sequence (10) along a direction of emission (90), said lateral face being designed as a radiation output surface (12). The laser light source further comprises an electrical contact surface (30) above every of the at least two active zones (45) on a main surface (14) of the semiconductor layer sequence (10) and a surface structure in the main surface (14) of the semiconductor layer sequence (10). The at least two active zones (45) are arranged in the active layer (40) at a right angle to the direction of emission (90) and interspaced from each other. Every electrical contact surface (30) has a first section (31) and a second section (32) which grows wider along the direction of emission (90) towards the radiation output surface (12). The surface structure between the at least two electrical contact surfaces (30) has at least one first recess (6) along the direction of emission (90) and second recesses (7), every first section (31) of the electrical contact surfaces (30) being arranged between at least two second recesses (7).

    Abstract translation: 特别是激光光源包括与具有至少两个活性区域（45），其能够在所述操作电磁辐射通过一个运行的沿放射方向的半导体层序列（10）的辐射输出（12）侧表面的有源层的半导体层序列（10）（90） 辐射，每一个电接触表面（30）在每个所述至少两个有源区（45）上的半导体层序列（10）和在该半导体层序列（10）的主表面（14）的表面结构的一个主表面（14），其中所述至少两种活性 区域（45）横向于所述活性层（40）彼此间隔开的辐射（90）的方向布置，每个所述电接触表面（30）的第一部分（31）和具有沿辐射方向延伸的第二部分（32） （90）朝着辐射输出表面（12）朝着增加的宽度d移动 他所述至少两个电接触表面之间的表面结构（30）至少一个第一凹槽（6）沿辐射（90），第二凹部的方向和（7），并在至少两个第二之间分别电接触区（30）的所述第一子区域（31） 井（7）被安排。

    LIGHT-EMITTING DIODE AND METHOD FOR PRODUCING A LIGHT-EMITTING DIODE
    19.
    发明申请
    LIGHT-EMITTING DIODE AND METHOD FOR PRODUCING A LIGHT-EMITTING DIODE 审中-公开
    发光二极管和制造发光二极管的方法

    公开(公告)号：WO2011037570A8

    公开(公告)日：2011-06-23

    申请号：PCT/US2009058305

    申请日：2009-09-25

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  NGUYEN FRANCIS ,  MCNATT JOHN ,  BRICK PETER ,  WEBER-RABSILBER SVEN

    Inventor： NGUYEN FRANCIS ,  MCNATT JOHN ,  BRICK PETER ,  WEBER-RABSILBER SVEN

    IPC: G09G3/32

    CPC classification number: H05B33/0851 ,  G09G3/3406 ,  G09G2320/041 ,  G09G2320/0633 ,  G09G2320/064 ,  G09G2360/145 ,  H05B33/0824 ,  H05B33/089

    Abstract: A light-emitting diode includes at least one light-emitting diode chip, at least one control device, wherein each of the light-emitting diode chips is electrically connected to one of said at least one control devices, each of said at least one control devices comprises a data storage device in which brightness data for each light- emitting diode chip which is connected to said control device is stored, and the control device drives the connected light-emitting diode chip with a current which is selected according to stored brightness data for said light erniturig-diode chip.

    Abstract translation: 发光二极管包括至少一个发光二极管芯片，至少一个控制装置，其中每个发光二极管芯片电连接到所述至少一个控制装置中的一个，所述至少一个控制装置 设备包括数据存储装置，在该数据存储装置中存储与所述控制装置连接的每个发光二极管芯片的亮度数据，并且控制装置以根据存储的亮度数据选择的电流驱动连接的发光二极管芯片 用于所述发光二极管芯片。

    METHOD FOR PRODUCING A RADIATION-EMITTING COMPONENT AND RADIATION-EMITTING COMPONENT
    20.
    发明申请
    METHOD FOR PRODUCING A RADIATION-EMITTING COMPONENT AND RADIATION-EMITTING COMPONENT 审中-公开
    用于生产辐射发光​​元件和辐射分量

    公开(公告)号：WO2009039808A3

    公开(公告)日：2009-10-15

    申请号：PCT/DE2008001377

    申请日：2008-08-18

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  BRICK PETER

    Inventor： BRICK PETER

    IPC: H01S5/40 ,  H01S5/00 ,  H01S5/10 ,  H01S5/20 ,  H01S5/22

    CPC classification number: H01S5/4043 ,  H01S5/0035 ,  H01S5/1064 ,  H01S5/2004 ,  H01S5/22 ,  H01S5/3095 ,  H01S2301/18 ,  H01S2301/206

    Abstract: A method for producing a radiation-emitting component (1) is provided. A radiation characteristic in the far field is specified. From the predetermined radiation characteristic a refractive index profile is determined for the radiation-emitting component (1) in a direction extending perpendicular to a primary radiation direction of the component. A design for the component is determined such that the component has the previously determined refractive index profile. The component (1) is configured in accordance to the previously determined design. Furthermore, a radiation-emitting component is provided.

    Abstract translation: 提供了一种制造发射辐射的元件（1）的方法。 在远场中的辐射被设置。 从预定辐射图案，所述辐射发射元件（1）的折射率分布是在沿垂直于部件的方向的主发射方向确定。 被确定用于所述部件的结构，使得组件具有先前确定的折射率分布。 组分（1）被形成在按照预定的结构。 此外，发射辐射的元件被指定。

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