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公开(公告)号：US20150035014A1
公开(公告)日：2015-02-05
申请号：US13959081
申请日：2013-08-05
Applicant: Raytheon Company
Inventor： John J. Drab , Justin Gordon Adams Wehner , Christian M. Boemler
IPC: H01L27/146 , H01L29/868
CPC classification number: H01L27/14643 , H01L27/1446 , H01L27/14605 , H01L27/14649 , H01L27/14689 , H01L29/868 , H01L31/105
Abstract: A semiconductor structure having: a silicon structure; and a plurality of laterally spaced PiN diodes formed in the silicon structure; and a surface of the silicon structure configured to reduce reverse bias leakage current through the PiN diodes. In one embodiment, a gate electrode structures is disposed on a surface of the silicon structure, the gate electrode structure having portions disposed between adjacent pairs of the diodes, the gate structure being biased to prevent leakage current through the diodes.
Abstract translation: 一种半导体结构，具有：硅结构; 以及形成在所述硅结构中的多个横向间隔开的PiN二极管; 并且所述硅结构的表面被配置为减少穿过所述PiN二极管的反向偏置漏电流。 在一个实施例中，栅极电极结构设置在硅结构的表面上，栅极电极结构具有设置在相邻的二极管对之间的部分，栅极结构被偏置以防止通过二极管的漏电流。
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公开(公告)号：US10267997B2
公开(公告)日：2019-04-23
申请号：US14938361
申请日：2015-11-11
Applicant: RAYTHEON COMPANY
Abstract: A scene projector including an array of light emitting pixels, a tunable filter element, and a spatial light modulator. The tunable filter element is optically coupled to the array of light emitting pixels such that light emitted from the array of light emitting pixels is passed through the tunable filter element as filtered light. The spatial light modulator is optically coupled to the array of light emitting pixels and is configured to generate transmitted light by interacting with the filtered light to control at least one of an amplitude, a phase, and a polarization of the filtered light.
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公开(公告)号：US09702988B1
公开(公告)日：2017-07-11
申请号：US14989590
申请日：2016-01-06
Applicant: Raytheon Company
Inventor： David R Rhiger , Justin Gordon Adams Wehner , Kelly Jones , Siddhartha Ghosh
Abstract: A method for detecting both gamma-ray events and neutron events with a common detector, where the detector includes a layer of semiconductor material adjacent one side of a glass plate and a Gd layer on an opposite side of the glass plate, between the glass plate and a layer of silicon PIN material to form an assembly that is bounded by electrodes, including a semiconductor anode on one side of the semiconductor layer, a cathode connected to the glass plate, and a Si PIN anode on a side of the Si PIN layer opposite the semiconductor anode. The method includes the steps of: (1) monitoring the electrical signal at each of the semiconductor anode and the Si PIN anode, and (2) comparing signals from the semiconductor anode and the SI PIN anode to differentiate between gamma-ray events and neutron events based on predetermined criteria.
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公开(公告)号：US20150243825A1
公开(公告)日：2015-08-27
申请号：US14191933
申请日：2014-02-27
Applicant: Raytheon Company
Inventor： Craig Keasler , Justin Gordon Adams Wehner , Richard H. Wyles , Donald F. King , Peter C. Roberts , Christopher L. Mears
IPC: H01L31/101 , H01L31/0352
CPC classification number: H01L31/1013 , G01J2005/202 , H01L27/1446 , H01L27/1463 , H01L31/1032
Abstract: A radiation detector having a pair of adjacent mesas disposed on a common layer. The common layer comprises a first semiconductor layer having a first conductivity type and an energy bandgap responsive to radiation in a first spectral region. Each of the mesas comprises: a second semiconductor; and a third semiconductor layer disposed on the second semiconductor layer having the first conductivity type and an energy bandgap responsive to radiation in a second spectral region. The second semiconductor layer may have a conductivity type opposite the first conductivity type or the three layers may provide an nBn or pBp structure. The third semiconductor layer of the second mesa produces minority carriers, in response to the radiation in the second spectral region, flowing as unwanted carriers into the common layer towards the first mesa. A barrier region is disposed in the common layer to prevent the unwanted carriers from passing from the second mesa to the first mesa.
Abstract translation: 一种放射线检测器，具有设置在公共层上的一对相邻台面。 公共层包括具有第一导电类型的第一半导体层和响应于第一光谱区域中的辐射的能带隙。 每个台面包括：第二半导体; 以及设置在具有第一导电类型的第二半导体层上的第三半导体层和响应于第二光谱区域中的辐射的能带隙。 第二半导体层可以具有与第一导电类型相反的导电类型，或者三层可以提供nBn或pBp结构。 第二台面的第三半导体层响应于第二光谱区域中的辐射而产生少数载流子，作为不想要的载流子朝向第一台面流入公共层。 阻挡区域设置在公共层中以防止不需要的载体从第二台面传播到第一台面。
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15.发明申请公开(公告)号：US20150137295A1
公开(公告)日：2015-05-21
申请号：US14084276
申请日：2013-11-19
Applicant: RAYTHEON COMPANY
Inventor： Justin Gordon Adams Wehner , Edward P. Smith , Stephanie Bostwick
IPC: H01L27/146
CPC classification number: H01L27/14629 , H01L27/14669 , H01L31/02327 , H01L31/03046 , H01L31/1013 , H01L31/109 , Y02E10/544
Abstract: Methods and structures for providing single-color or multi-color photo-detectors leveraging cavity resonance for performance benefits. In one example, a radiation detector (110) includes a semiconductor absorber layer (210, 410A, 410B, 610, 810, 1010, 1030, 1210, 1230) having a first electrical conductivity type and an energy bandgap responsive to radiation in a first spectral region, a semiconductor collector layer (220, 630, 830, 1020, 1040) coupled to the absorber layer (210, 410A, 41013, 610, 810, 1010, 1030, 1210, 1230) and having a second electrical conductivity type, and a resonant cavity coupled to the collector layer (220, 630, 830, 1020, 1040) and having a first mirror (240) and a second mirror (245).
Abstract translation: 用于提供单色或多色光电探测器的方法和结构，利用腔谐振获得性能优势。 在一个示例中，辐射检测器（110）包括具有第一导电类型的半导体吸收层（210,410A，410B，610,810,1010,1030,1210,1230）以及响应于第一导电类型中的辐射的能带隙 耦合到所述吸收层（210,410A，41013,610,810,1010,1030,1210,1230）并且具有第二导电类型的半导体集电极层（220,630,830,1020,1040） 以及耦合到所述集电极层（220,630,820,1020,1040）并且具有第一反射镜（240）和第二反射镜（245）的谐振腔。
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Patent Agency Ranking
公开(公告)号：US11650438B2
公开(公告)日：2023-05-16
申请号：US16529978
申请日：2019-08-02
Applicant: RAYTHEON COMPANY
Inventor： Jamal I. Mustafa , Justin Gordon Adams Wehner , Christopher R. Koontz
IPC: G02F1/017
CPC classification number: G02F1/017 , G02F2203/11 , G02F2203/52
Abstract: A method is provided for operating one or more one solid-state electro-optic device to provide an electrically switching shutter. The method includes forming an alternating stack of first semiconductor layers having a first dopant and second semiconductor layers having a second dopant to form at least one superlattice semiconductor device. The method further includes applying to the at least one superlattice semiconductor device a first voltage to induce a transparent state of the alternating stack such that light is transmitted through the alternating stack, and applying to the at least one superlattice semiconductor device a second voltage different from the first voltage to induce an opaque state of the alternating stack such that light is inhibited from passing through the alternating stack.
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公开(公告)号：US20220268570A1
公开(公告)日：2022-08-25
申请号：US17180679
申请日：2021-02-19
Applicant: Raytheon Company
Inventor： Justin Gordon Adams Wehner , Jamal Ibrahim Mustafa
Abstract: Apparatus and associated methods relate to passive ranging of objects by using relative positional relation of the object to a coded aperture ranged object. A first range to a first object is determined via a coded-aperture ranging system based on a point spread function optimization of an image of the first object. The terrain surface between the first object and a second object is mapped via a 3D polarimetry system. A second range to the second object is then calculated via a range calculator based on the first range and the terrain surface between the first object and the second object.
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公开(公告)号：US10971538B2
公开(公告)日：2021-04-06
申请号：US16135611
申请日：2018-09-19
Applicant: Raytheon Company
Inventor： John J. Drab , Justin Gordon Adams Wehner , Christian M. Boemler
IPC: H01L27/146 , H01L27/144 , H01L29/868 , H01L31/105
Abstract: A semiconductor structure having: a silicon structure; and a plurality of laterally spaced PiN diodes formed in the silicon structure; and a surface of the silicon structure configured to reduce reverse bias leakage current through the PiN diodes. In one embodiment, a gate electrode structures is disposed on a surface of the silicon structure, the gate electrode structure having portions disposed between adjacent pairs of the diodes, the gate structure being biased to prevent leakage current through the diodes.
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公开(公告)号：US20210033893A1
公开(公告)日：2021-02-04
申请号：US16529978
申请日：2019-08-02
Applicant: RAYTHEON COMPANY
Inventor： Jamal I. Mustafa , Justin Gordon Adams Wehner , Christopher R. Koontz
IPC: G02F1/017
Abstract: A method is provided for operating one or more one solid-state electro-optic device to provide an electrically switching shutter. The method includes forming an alternating stack of first semiconductor layers having a first dopant and second semiconductor layers having a second dopant to form at least one superlattice semiconductor device. The method further includes applying to the at least one superlattice semiconductor device a first voltage to induce a transparent state of the alternating stack such that light is transmitted through the alternating stack, and applying to the at least one superlattice semiconductor device a second voltage different from the first voltage to induce an opaque state of the alternating stack such that light is inhibited from passing through the alternating stack.
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公开(公告)号：US20190019836A1
公开(公告)日：2019-01-17
申请号：US16135611
申请日：2018-09-19
Applicant: Raytheon Company
Inventor： John J. Drab , Justin Gordon Adams Wehner , Christian M. Boemler
IPC: H01L27/146 , H01L31/105 , H01L29/868 , H01L27/144
Abstract: A semiconductor structure having: a silicon structure; and a plurality of laterally spaced PiN diodes formed in the silicon structure; and a surface of the silicon structure configured to reduce reverse bias leakage current through the PiN diodes. In one embodiment, a gate electrode structures is disposed on a surface of the silicon structure, the gate electrode structure having portions disposed between adjacent pairs of the diodes, the gate structure being biased to prevent leakage current through the diodes.
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