Abstract:
A MEMS device includes a backing wafer with a support portion and central back plate connected to the support portion with spring flexures, a diaphragm wafer with a support portions and a sensing portion connected to the support portion with spring flexures, a passivation layer on the diaphragm, and a topping wafer. The device allows for stress isolation of a diaphragm in a piezoresistive device without a large MEMS die.
Abstract:
A configuration for a capacitive pressure sensor uses a silicon on insulator wafer to create an electrically isolated sensing node across a gap from a pressure sensing wafer. The electrical isolation, small area of the gap, and silicon material throughout the capacitive pressure sensor allow for minimal parasitic capacitance and avoid problems associated with thermal mismatch.
Abstract:
A pressure sensor comprising a housing (62, 64), a diaphragm wafer (68), and an isolator (66) configured to absorb lateral stress. The diaphragm wafer (68) includes a fully exposed diaphragm (69), a fluid contact surface, a sensing element (74), and a support portion, where the support portion and the contact surface define a cavity. The isolator (66) extends laterally from the support portion to the housing (62, 64). The pressure sensor is easily drainable, eliminating the buildup of particulates, and the diaphragm (69) can be directly wire-bonded to printed circuit boards, eliminating the need for extensive electrical feedthrough.
Abstract:
A sensor package (100) includes a manifold (102) and a MEMS die (104). The manifold (102) includes a cylindrical body (106), a flange (110), and a mounting surface (120). The cylindrical body (106) defines a first passage (112) that extends longitudinally along a central axis from a first exterior end (114) to an interior end (116) of the cylindrical body (106). The flange (110) extends from the cylindrical body (106) and has an outer periphery that is configured to support a print circuit board (126). The mounting surface (120) is disposed at the interior end (116) of the first passage (112). The surface area of the mounting surface (120) is less than the surface area of a MEMS die (104) configured to mate with the mounting surface (120).
Abstract:
A pressure sensor includes a Wheatstone bridge circuit including a first resistor (R1), a second resistor (R2), a third resistor (R3), and a fourth resistor (R4) having matching output characteristics. The pressure sensor further includes a first trim resistor (RG, RS) in series with the Wheatstone bridge circuit, wherein the first trim resistor has output characteristics matching the output characteristics of the first resistor, the second resistor, the third resistor, and the fourth resistor of the Wheatstone bridge. The pressure sensor additionally includes a second trim resistor (RZ, RV) in parallel or a parallel loop with the Wheatstone bridge circuit, wherein the second trim resistor has output characteristics matching the output characteristics of the first resistor, the second resistor, the third resistor, and the fourth resistor of the Wheatstone bridge.
Abstract:
A pressure sensor includes a Wheatstone bridge circuit including a first resistor (R1), a second resistor (R2), a third resistor (R3), and a fourth resistor (R4) having matching output characteristics. The pressure sensor further includes a first trim resistor (RG, RS) in series with the Wheatstone bridge circuit, wherein the first trim resistor has output characteristics matching the output characteristics of the first resistor, the second resistor, the third resistor, and the fourth resistor of the Wheatstone bridge. The pressure sensor additionally includes a second trim resistor (RZ, RV) in parallel or a parallel loop with the Wheatstone bridge circuit, wherein the second trim resistor has output characteristics matching the output characteristics of the first resistor, the second resistor, the third resistor, and the fourth resistor of the Wheatstone bridge.
Abstract:
A MEMS device includes a first layer (36), a second layer (38) connected to the first layer, a first mooring portion (40), a second mooring portion (42), and a MEMS device body (44). The MEMS device body is connected to the first mooring portion and the second mooring portion. The MEMS device body further includes a first cantilever (78) attached to the first mooring portion, a second cantilever (82) attached to the second mooring portion, and a spring (80). The spring is in operable communication with the first cantilever and the second cantilever.
Abstract:
Provided are embodiments for a resistor array. The resistor array includes a plurality of resistor elements, where the plurality of resistor elements includes a redundancy region for a most significant bit of an expected value. The resistor array also includes one or more switches coupled to the plurality of resistor elements, and a first terminal and a second terminal coupled to the plurality of resistor elements. Also provided are embodiments for trimming the resistor array where the resistor array includes a redundancy region for a most significant bit for an expected value.
Abstract:
A MEMS device with electronics integration places integrated circuit components on a topping wafer (120A) of a sensing die to conserve space, minimize errors and reduce cost of the device as a whole. The topping wafer is bonded to a sensing wafer (118) and secured in a housing (138).