Abstract:
A pressure sensor includes a housing (20), an isolator (26) positioned at a first end (22) of the housing, and a first cavity (28) formed between the first end of the housing and the isolator. The pressure sensor further includes a second cavity (42) formed in the housing and a channel (48) with a first end (50) fluidly connected to the first cavity and a second end (52) fluidly coupled to the second cavity. A pressure sensor chip (62) is positioned in the second cavity and includes a first diaphragm (68) positioned at a top side of the pressure sensor chip laterally outwards from the second end of the channel.
Abstract:
A pressure sensor includes a housing (20), an isolator (26) positioned at a first end (22) of the housing, and a first cavity (28) formed between the first end of the housing and the isolator. The pressure sensor further includes a second cavity (42) formed in the housing and a channel (48) with a first end (50) fluidly connected to the first cavity and a second end (52) fluidly coupled to the second cavity. A pressure sensor chip (62) is positioned in the second cavity and includes a first diaphragm (68) positioned at a top side of the pressure sensor chip laterally outwards from the second end of the channel.
Abstract:
A MEMS device with electronics integration places integrated circuit components on a topping wafer (120A) of a sensing die to conserve space, minimize errors and reduce cost of the device as a whole. The topping wafer is bonded to a sensing wafer (118) and secured in a housing (138).
Abstract:
A method for producing a silicon based MEMS pressure sensor includes forming a cavity in a first (100) surface of a silicon wafer with first and second parallel (100) surfaces wherein the angle between the walls of the first cavity and the first (100) surface where they intersect the first (100) surface are greater than 90 degrees and the remaining material between the bottom of the cavity and the second parallel (100) surface comprises a flexible diaphragm. The method also includes forming a backing wafer, having a through hole, and bonding the silicon wafer to the backing wafer such that the hole in the backing wafer matches up with the cavity in the second side of the (100) silicon wafer. A dielectric layer is formed on the second side of the (100) silicon wafer and a sensing element is formed on the dielectric layer to detect pressure induced deflection of the silicon diaphragm.
Abstract:
A temperature sensor assembly for measuring a gas temperature in a gas flow stream includes a first substrate having a first surface configured to be connected to a thermally conductive structure in a gas path, a first temperature sensor mounted to the first substrate a first distance from the first surface, and a second temperature sensor mounted to the first substrate a second distance from the first surface. The second distance is less than the first distance. The first and second temperature sensors are arranged along a temperature gradient.
Abstract:
A micro-fuse assembly includes a substrate (42), a number of thin-film micro-fuses on the substrate (42), and a topping wafer (70) configured to sealingly engage to at least one of the substrate or the thin-film micro-fuses to define a cavity therebetween. The cavity is configured to encapsulate the thin-film micro-fuses within an inert environment sealed within the cavity. A method of encapsulating a micro-fuse assembly within an inert environment using a topping wafer is also disclosed.
Abstract:
A MEMS device includes a backing wafer with a support portion and central back plate connected to the support portion with spring flexures, a diaphragm wafer with a support portions and a sensing portion connected to the support portion with spring flexures, a passivation layer on the diaphragm, and a topping wafer. The device allows for stress isolation of a diaphragm in a piezoresistive device without a large MEMS die.
Abstract:
A MEMS sensor includes a sensor die (101) configured to generate a sensor signal and a pedestal layer (103) disposed on the sensor die (101). The pedestal layer (103) includes a channel (107) defined therein about a pedestal (105) of the pedestal layer (103). The pedestal (105) is configured to be mounted to a housing. A method for manufacturing MEMS sensors can include disposing a pedestal layer (103) on a sensor layer, wherein the sensor layer defines a plurality of sensor dies (101) to be cut therefrom. The method further includes defining a respective channel (107) in the pedestal layer (103) for each sensor die (101), thereby creating a pedestal (105) for each sensor die (101).
Abstract:
A micromechanical pressure sensor for measuring a pressure differential includes a diaphragm having an inner region and two edge regions, one opposite the other with respect to the inner region. Two or more piezoresistive resistance devices are on the diaphragm, at least one in each of the inner and edge region, and are configured to be electrically connected in a bridge circuit. The micromechanical pressure sensor is configured so that an operating temperature of the one or more piezoresistive resistance devices in the inner region is substantially the same as an operating temperature of the one or more piezoresistive resistance devices in at least one of the edge regions throughout a full operating range such that an error of the micromechanical pressure sensor output resulting from self-heating is less than if the micromechanical pressure sensor were not configured to maintain the operating temperatures substantially the same.
Abstract:
A method of testing sensors (40) includes providing a test sheet (60) that includes a plurality of sensor assemblies (18), a plurality of test pads (64), and traces (66) extending from the sensor assemblies (18) to the plurality of test pads (64). A sensor (40) is positioned on each sensor assembly (18). Each sensor (40) is connected to the sensor assembly (18) with wire bonds (44A, 44B). An enclosure (60) is formed over the plurality of sensor assemblies (18). An electrical signal is detected from each of the plurality of sensor assemblies (18) at the test pads (64).