公开(公告)号：DE69936564D1

公开(公告)日：2007-08-30

申请号：DE69936564

申请日：1999-11-23

Applicant: SONY CORP

Inventor： HINO TOMONORI ,  ASANO TAKEHARU ,  ASATSUMA TSUNENORI ,  KIJIMA SATORU ,  FUNATO KENJI ,  TOMIYA SHIGETAKA

IPC: H01L21/20 ,  H01L21/033 ,  H01L33/06 ,  H01L33/32 ,  H01L33/34 ,  H01L33/40 ,  H01S5/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/30 ,  H01S5/323 ,  H01S5/343

Abstract: When making a growth mask on a substrate and using the growth mask to selectively grow nitride III-V compound semiconductors on the substrate, a multi-layered film including a nitride forming at least its top surface is used as the growth mask. The growth mask may be combination of an oxide film and a nitride film thereon, combination of a metal film and a nitride film thereon, combination of an oxide film, a film thereon made up of a nitride and an oxide, and a nitride film thereon, or combination of a first metal film, a second metal film thereon different from the first metal film and a nitride film thereon, for example. The oxide film may be a SiO2, for example, the nitride film may be a TiN film or a SiN film, the film made up of a nitride and an oxide may be a SiNO film, and the metal film may be a Ti film or a Pt film, for example.

公开(公告)号：DE69923919T2

公开(公告)日：2006-04-06

申请号：DE69923919

申请日：1999-11-19

Applicant: SONY CORP

Inventor： ASANO TAKEHARU ,  ASATSUMA TSUNENORI ,  HINO TOMONORI ,  TOMIYA SHIGETAKA ,  YAMAGUCHI TAKASHI ,  KOBAYASHI TAKASHI

IPC: H01S5/00 ,  H01S5/323 ,  H01S5/22 ,  H01S5/223 ,  H01S5/227 ,  H01S5/30 ,  H01S5/343

Abstract: In a semiconductor laser made of nitride III-V compound semiconductors and having a ridge-shaped stripe, which is capable of stably controlling transverse modes to prevent high-order mode oscillation during high output power and excellent in heat dissipation, opposite sides of the ridge are buried by a buried semiconductor layer such as AlGaN buried layer made of a nitride III-V compound semiconductor at least of which is a non-single crystal such as polycrystal. The buried semiconductor layer is grown under a growth temperature in the range from 520 DEG C to 760 DEG C.

公开(公告)号：DE69803721T2

公开(公告)日：2002-09-12

申请号：DE69803721

申请日：1998-05-22

Applicant: SONY CORP

Inventor： ASATSUMA TSUNENORI ,  YANASHIMA KATSUNORI ,  MIYAJIMA TAKAO

IPC: H01L21/203 ,  H01L21/205 ,  H01L29/205 ,  H01L29/207 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01L33/00

Abstract: A plurality of first layers made of AlGaN mixed crystal each having a thickness of the order of 1 to 100 nm and a plurality of second layers of p-type GaN with Mg each having a thickness of the order of 1 to 100 nm are alternately stacked. Since each of the first and second layers is thin, the stacked layers as a whole have properties of p-type AlGaN mixed crystal although the first layers do not include Mg and the second layers do not include Al. An Al source and a Mg source are temporally separated to be introduced in a stacking process. A reaction between the Al source and Mg source which may interfere desirable crystal growth is thereby prevented. Crystals of good quality are thus grown and electrical conductivity is thereby improved.

公开(公告)号：DE69803721D1

公开(公告)日：2002-03-21

申请号：DE69803721

申请日：1998-05-22

Applicant: SONY CORP

Inventor： ASATSUMA TSUNENORI ,  YANASHIMA KATSUNORI ,  MIYAJIMA TAKAO

IPC: H01L21/203 ,  H01L21/205 ,  H01L29/205 ,  H01L29/207 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01L33/00

Abstract: A plurality of first layers made of AlGaN mixed crystal each having a thickness of the order of 1 to 100 nm and a plurality of second layers of p-type GaN with Mg each having a thickness of the order of 1 to 100 nm are alternately stacked. Since each of the first and second layers is thin, the stacked layers as a whole have properties of p-type AlGaN mixed crystal although the first layers do not include Mg and the second layers do not include Al. An Al source and a Mg source are temporally separated to be introduced in a stacking process. A reaction between the Al source and Mg source which may interfere desirable crystal growth is thereby prevented. Crystals of good quality are thus grown and electrical conductivity is thereby improved.