公开(公告)号：DE69926856T2

公开(公告)日：2006-05-18

申请号：DE69926856

申请日：1999-11-25

Applicant: SONY CORP

Inventor： YAMAGUCHI TAKASHI ,  KOBAYASHI TOSHIMASA ,  KIJIMA SATORU ,  KOBAYASHI TAKASHI ,  ASATSUMA TSUNENORI ,  ASANO TAKEHARU ,  HINO TOMONORI

IPC: H01S5/323 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/227 ,  H01S5/343

Abstract: A GaN compound semiconductor laser includes an AlGaN buried layer which buries opposite sides of a ridge stripe portion formed on a p-type AlGaN cladding layer. The AlGaN buried layer is made by first patterning an upper part of the p-type AlGaN cladding layer and a p-type GaN contact layer into a ridge stripe configuration by using a SiO2 film as an etching mask, then growing the AlGaN buried layer non-selectively on the entire substrate surface to bury both sides of the ridge stripe portion under the existence of the SiO2 film on the ridge stripe portion, and thereafter selectively removing the AlGaN buried layer from above the ridge stripe portion by etching using the SiO2 film as an etching stop layer. Thus, the GaN compound semiconductor laser is stabilized in the transverse mode, intensified in output power, and improved in lifetime.

公开(公告)号：DE69926856D1

公开(公告)日：2005-09-29

申请号：DE69926856

申请日：1999-11-25

Applicant: SONY CORP

Inventor： YAMAGUCHI TAKASHI ,  KOBAYASHI TOSHIMASA ,  KIJIMA SATORU ,  KOBAYASHI TAKASHI ,  ASATSUMA TSUNENORI ,  ASANO TAKEHARU ,  HINO TOMONORI

IPC: H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/227 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

Abstract: A GaN compound semiconductor laser includes an AlGaN buried layer which buries opposite sides of a ridge stripe portion formed on a p-type AlGaN cladding layer. The AlGaN buried layer is made by first patterning an upper part of the p-type AlGaN cladding layer and a p-type GaN contact layer into a ridge stripe configuration by using a SiO2 film as an etching mask, then growing the AlGaN buried layer non-selectively on the entire substrate surface to bury both sides of the ridge stripe portion under the existence of the SiO2 film on the ridge stripe portion, and thereafter selectively removing the AlGaN buried layer from above the ridge stripe portion by etching using the SiO2 film as an etching stop layer. Thus, the GaN compound semiconductor laser is stabilized in the transverse mode, intensified in output power, and improved in lifetime.

公开(公告)号：DE69803721T3

公开(公告)日：2011-06-09

申请号：DE69803721

申请日：1998-05-22

Applicant: SONY CORP

Inventor： ASATSUMA TSUNENORI ,  YANASHIMA KATSUNORI ,  MIYAJIMA TAKAO

IPC: H01L33/00 ,  H01L21/203 ,  H01L21/205 ,  H01L29/205 ,  H01L29/207 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323

公开(公告)号：CA2463169A1

公开(公告)日：2003-04-24

申请号：CA2463169

申请日：2002-10-03

Applicant: SUMITOMO ELECTRIC INDUSTRIES ,  SONY CORP

Inventor： ASATSUMA TSUNENORI ,  TOMIYA SHIGETAKA ,  TAMAMURA KOSHI ,  GOTO OSAMU ,  MOTOKI KENSAKU ,  TOJO TSUYOSHI

IPC: C30B25/02 ,  H01L21/20 ,  H01L33/00 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01S5/02 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/40 ,  H01S5/343 ,  H01L21/205

Abstract: A method for fabricating a semiconductor light emitting element or a semiconductor element by growing a nitride based III-V compound semiconducto r layer for forming a light emitting element structure or an element structure on a nitride based III-V compound semiconductor substrate where a plurality of second regions having a second mean dislocation density higher than a first mean dislocation density are arranged regularly in a first region of crystal having a first mean dislocation density, wherein an element region is define d on the nitride based III-V compound semiconductor substrate such that the second region is not included substantially or not included in a light emitting region or an active region.

公开(公告)号：DE69936564T2

公开(公告)日：2008-04-03

申请号：DE69936564

申请日：1999-11-23

Applicant: SONY CORP

Inventor： HINO TOMONORI ,  ASANO TAKEHARU ,  ASATSUMA TSUNENORI ,  KIJIMA SATORU ,  FUNATO KENJI ,  TOMIYA SHIGETAKA

IPC: H01L21/20 ,  H01L21/033 ,  H01L33/06 ,  H01L33/32 ,  H01L33/34 ,  H01L33/40 ,  H01S5/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/30 ,  H01S5/323 ,  H01S5/343

Abstract: When making a growth mask on a substrate and using the growth mask to selectively grow nitride III-V compound semiconductors on the substrate, a multi-layered film including a nitride forming at least its top surface is used as the growth mask. The growth mask may be combination of an oxide film and a nitride film thereon, combination of a metal film and a nitride film thereon, combination of an oxide film, a film thereon made up of a nitride and an oxide, and a nitride film thereon, or combination of a first metal film, a second metal film thereon different from the first metal film and a nitride film thereon, for example. The oxide film may be a SiO2, for example, the nitride film may be a TiN film or a SiN film, the film made up of a nitride and an oxide may be a SiNO film, and the metal film may be a Ti film or a Pt film, for example.

公开(公告)号：DE69923919D1

公开(公告)日：2005-04-07

申请号：DE69923919

申请日：1999-11-19

Applicant: SONY CORP

Inventor： ASANO TAKEHARU ,  ASATSUMA TSUNENORI ,  HINO TOMONORI ,  TOMIYA SHIGETAKA ,  YAMAGUCHI TAKASHI ,  KOBAYASHI TAKASHI

IPC: H01S5/00 ,  H01S5/22 ,  H01S5/223 ,  H01S5/227 ,  H01S5/30 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

Abstract: In a semiconductor laser made of nitride III-V compound semiconductors and having a ridge-shaped stripe, which is capable of stably controlling transverse modes to prevent high-order mode oscillation during high output power and excellent in heat dissipation, opposite sides of the ridge are buried by a buried semiconductor layer such as AlGaN buried layer made of a nitride III-V compound semiconductor at least of which is a non-single crystal such as polycrystal. The buried semiconductor layer is grown under a growth temperature in the range from 520 DEG C to 760 DEG C.

公开(公告)号：CA2655579A1

公开(公告)日：2003-04-24

申请号：CA2655579

申请日：2002-10-03

Applicant: SONY CORP ,  SUMITOMO ELECTRIC INDUSTRIES

Inventor： GOTO OSAMU ,  ASATSUMA TSUNENORI ,  MOTOKI KENSAKU ,  TOMIYA SHIGETAKA ,  TOJO TSUYOSHI ,  TAMAMURA KOSHI

IPC: H01L21/20 ,  C30B25/02 ,  C30B29/38 ,  C30B29/40 ,  H01L21/78 ,  H01L29/20 ,  H01L33/00 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01S5/02 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/40

Abstract: When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III-V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.

公开(公告)号：EP1441426A4

公开(公告)日：2013-05-22

申请号：EP02772973

申请日：2002-10-03

Applicant: SUMITOMO ELECTRIC INDUSTRIES ,  SONY CORP

Inventor： ASATSUMA TSUNENORI ,  TOMIYA SHIGETAKA ,  TAMAMURA KOSHI ,  TOJO TSUYOSHI ,  GOTO OSAMU ,  MOTOKI K

IPC: B82Y20/00 ,  C30B25/02 ,  C30B29/40 ,  H01L21/02 ,  H01L21/20 ,  H01L21/205 ,  H01L33/00 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01S5/02 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/40

CPC classification number: C30B25/02 ,  B82Y20/00 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02664 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/32 ,  H01S5/0207 ,  H01S5/0213 ,  H01S5/2036 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/2231 ,  H01S5/32341 ,  H01S5/34333 ,  H01S5/4031 ,  H01S2301/173

Abstract: When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III-V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.

公开(公告)号：CA2655579C

公开(公告)日：2010-09-28

申请号：CA2655579

申请日：2002-10-03

Applicant: SUMITOMO ELECTRIC INDUSTRIES ,  SONY CORP

Inventor： ASATSUMA TSUNENORI ,  TOMIYA SHIGETAKA ,  TAMAMURA KOSHI ,  TOJO TSUYOSHI ,  GOTO OSAMU ,  MOTOKI KENSAKU

IPC: H01L21/20 ,  C30B25/02 ,  C30B29/38 ,  C30B29/40 ,  H01L21/78 ,  H01L29/20 ,  H01L33/00 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01S5/02 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/40

Abstract: When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III-V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.

公开(公告)号：CA2463169C

公开(公告)日：2009-05-12

申请号：CA2463169

申请日：2002-10-03

Applicant: SUMITOMO ELECTRIC INDUSTRIES ,  SONY CORP

Inventor： MOTOKI KENSAKU ,  ASATSUMA TSUNENORI ,  GOTO OSAMU ,  TOJO TSUYOSHI ,  TOMIYA SHIGETAKA ,  TAMAMURA KOSHI

IPC: H01L21/20 ,  C30B25/02 ,  C30B25/04 ,  C30B29/38 ,  H01L21/205 ,  H01L29/20 ,  H01L33/00 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01S5/02 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/40

Abstract: When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III-V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.