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公开(公告)号：JP2000138300A
公开(公告)日：2000-05-16
申请号：JP31134798
申请日：1998-10-30
Applicant: SONY CORP
Inventor： FUJIWARA ICHIRO
IPC: G11C16/04 , B82B1/00 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
Abstract: PROBLEM TO BE SOLVED: To reduce the operating voltage value of a memory cell of MONOS type, etc., to a value not larger than 10 V, while keeping intact its well disturbance characteristic and its high-speed writing characteristic. SOLUTION: In a memory transistor (M11, etc.), a gate electrode and gate insulation films, including a tunnel insulation film, are laminated on the semiconductor-channel forming region provided on the surface of a substrate to provide discretely in the form of a plane charge storing means in the gate insulation film. The memory transistor has, above the gate electrode or a wiring layer connected with the gate electrode (e.g. word line WL1, etc.), a pull-up electrode closing thereto via a dielectric film. The pull-up electrode is connected with a pull-up gate biasing circuit 102 for applying a predetermined voltage to the pull-up electrode. The pull-up gate biasing circuit 102 feeds to the pull-up electrode through a capacitive coupling, via a selective transistor ST0 a voltage tending to boost the gate electrode (the word line WL1, etc.).
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公开(公告)号：JPH1083586A
公开(公告)日：1998-03-31
申请号：JP23688896
申请日：1996-09-06
Applicant: SONY CORP
Inventor： FUJIWARA ICHIRO
Abstract: PROBLEM TO BE SOLVED: To improve a recording density. SOLUTION: This device records or reproduces information onto or from a recording medium by a head consisting of a needle-like electrode. In such a case, the recording medium has a charge storage layer having at least a nano-crystal layer and records or erases the information by the charge transfer to the prescribed region of the electrons or hole traps existing on the recording medium by impressing voltage from the head. The reproduction of the information is executed by reproducing the information recorded in the prescribed region described above with the head which is brought into or is not brought into contact with the recording medium and detecting in this state the change rate of the electrostatic capacity in the region or the change rate of the charges or the surface potential thereof.
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公开(公告)号：JPH0896353A
公开(公告)日：1996-04-12
申请号：JP22784594
申请日：1994-09-22
Applicant: SONY CORP
Inventor： FUJIWARA ICHIRO , KAMEI TAKAHIRO , TANAKA KOICHI , KAWAKADO KOICHI
Abstract: PURPOSE: To reduce the coefft. of friction of a magnetic recording medium even in a severe environment by forming a mixed lubricant layer consisting of a coupling agent and a specified amine salt of fluoroalkylcarboxylic acid on a protective film on a magnetic layer. CONSTITUTION: When a ferromagnetic metallic film 2, a protective film 3 and a lubricant film 4 are laminated on a base film 1 to obtain a magnetic recording medium, a mixed lubricant layer consisting of a coupling agent and an amine salt of fluoroalkylcarboxylic acid represented by formula I, II or III is used as the film 4. The coefft. of friction of the magnetic recording medium can be reduced even in a severe environment such as an environment at a high temp. and humidity or at a low temp. and the objective magnetic recording medium having improved running performance, frictional resistance and durability over a long period of time is obtd.
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公开(公告)号：JPH07129951A
公开(公告)日：1995-05-19
申请号：JP27652193
申请日：1993-11-05
Applicant: SONY CORP
Inventor： FUJIWARA ICHIRO , KAMEI TAKAHIRO , TANAKA KOICHI , KAWAKADO KOICHI
Abstract: PURPOSE:To attain superior lubricity by a lubricant layer independently of service environment, to maintain its lubricating effect over a long period of time and to ensure satisfactory traveling performance, wear resistance and durability by forming a mixed lubricant layer having a prescribed structure on a protective layer. CONSTITUTION:A magnetic metallic thin film 2 of Co-Ni and a carbon protective layer 3 are successively formed on a PET film as a non-magnetic substrate 1 and a mixed lubricant consisting of partially fluorinated alkylcarboxylic acid represented by formula I and a titanate coupling agent represented by formula II is stuck as a lubricant layer 4 on the protective layer 3 to obtain the objective magnetic recording medium. The titanate coupling agent has superior lubricating action but this action is deteriorated under severe environment at high temp. and high humidity or low temp. and low humidity. The deterioration of the lubricating action of the coupling agent and the increase of the coefft. of friction are inhibited by mixing the coupling agent with the partially fluorinated alkylcarboxylic acid and satisfactory traveling performance, wear resistance and durability are ensured.
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公开(公告)号：JPH0641039A
公开(公告)日：1994-02-15
申请号：JP21343092
申请日：1992-07-17
Applicant: SONY CORP
Inventor： ISHIBASHI TADASHI , FUJIWARA ICHIRO , ASAI NOBUTOSHI
IPC: G02F1/35 , C07C245/08 , G02F1/355 , G02F1/361
Abstract: PURPOSE:To obtain a new 4-aminoalkyl-4'-nitroazobenzene useful as an organic nonlinear optical material providing an important key device in an optoelectronic system such as optical communication, optical disks, optical information and optical information processing, etc. CONSTITUTION:The compound is expressed by formula I [(n) is 20 or more], e.g. a compound of formula II. This compound of formula I is obtained by reacting amino group of 4-amino-4'--nitroazobenzene with an alkyl halide (e.g. docosyl bromide). A Y type Langmuir-Blodgett film good as a thin film waveguide can be prepared by using this new compound of formula I. Thereby, an organic nonlinear optical element, especially a wavelength converting element (second harmonic generation) and an optical modulator using the secondary nonlinear optical effects and an optical switch using the tertiary nonlinear optical effects can be realized.
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Patent Agency Ranking
公开(公告)号：JP2014229758A
公开(公告)日：2014-12-08
申请号：JP2013108448
申请日：2013-05-22
Inventor： SHOJI MITSUHARU , FUJIWARA ICHIRO
IPC: H01L21/8246 , H01L27/10 , H01L27/105 , H01L29/82 , H01L43/08 , H01L45/00 , H01L49/00
CPC classification number: H01L27/228 , H01L27/2436 , H01L43/02 , H01L43/10 , H01L43/12
Abstract: 【課題】抵抗変化素子の特性を向上させることが可能な半導体装置およびその製造方法を提供する。【解決手段】第1基板の表面側に選択トランジスタを有する第1部材と、抵抗変化素子および前記抵抗変化素子に接する接続層を有し、前記接続層が前記第1部材の裏面に接合されている第2部材とを備えた半導体装置。【選択図】図6
Abstract translation: 要解决的问题：提供一种可以改善电阻变化元件的特性的半导体器件; 并提供半导体器件的制造方法。解决方案：半导体器件包括：第一部件，其在第一基板的表面侧上具有选择晶体管; 以及第二部件，其具有接触电阻变化元件的连接层，其中连接层结合到第一部件的后表面。
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公开(公告)号：JP2006128593A
公开(公告)日：2006-05-18
申请号：JP2005028909
申请日：2005-02-04
Inventor： FUJIWARA ICHIRO
IPC: H01L21/8247 , H01L21/318 , H01L27/115 , H01L29/788 , H01L29/792
CPC classification number: H01L29/66833 , H01L21/28282 , H01L27/115 , H01L29/792
Abstract: PROBLEM TO BE SOLVED: To provide a nonvolatile memory device which easily achieves a reduction of voltage, and method for producing the same. SOLUTION: In a nonvolatile memory device, hot electrons are injected into the local area of a nitride film 12B at one or both of source-drain regions 17D (and 17S) to store data in a memory transistor 10. In this device, as a standard for evaluating a film quality of the nitride film 12B, a density of the bond group (Si-H bond) of silicon and hydrogen is under 1×10 21 cm -3 , an extinction coefficient in an ultraviolet region at a wavelength of 240 nm of the nitride film 12B is under 0.10, or the extinction coefficient in 230 nm is under 0.14. Otherwise, the standard for evaluating the film quality of the nitride film 12B is defined by an optical energy, a peak wavelength of a luminance spectrum, or a peak energy thereof. If any one of these standards for evaluating the film quality is satisfied, the reduction of a data retention characteristic can be suppressed even when retaining high-temperature data. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract translation: 解决的问题：提供一种易于实现电压降低的非易失性存储装置及其制造方法。 解决方案：在非易失性存储器件中，热电子注入到源极 - 漏极区域17D（和17S）之一或两者上的氮化物膜12B的局部区域中，以将数据存储在存储晶体管10中。在该器件 作为评价氮化膜12B的膜质量的标准，硅和氢的键合基团（Si-H键）的密度低于1×10 30 在氮化膜12B的波长为240nm的紫外线区域的消光系数为0.10以下，230nm的消光系数为0.14以下。 否则，用于评估氮化膜12B的膜质量的标准由光能，亮度谱的峰值波长或其峰值能量来定义。 如果满足用于评价膜质量的这些标准中的任何一个，即使保持高温数据，也能够抑制数据保持特性的降低。 版权所有（C）2006，JPO＆NCIPI
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公开(公告)号：JP2005149617A
公开(公告)日：2005-06-09
申请号：JP2003385489
申请日：2003-11-14
Inventor： FUJIWARA ICHIRO
IPC: G11C16/02 , G11C16/04 , H01L21/8247 , H01L27/10 , H01L27/115 , H01L29/788 , H01L29/792
Abstract: PROBLEM TO BE SOLVED: To solve the problem of the difficulty of reducing an erasure voltage which obstructs the realization of single power voltage driving. SOLUTION: The intial value V0 of data is stored in the memory cell group of arbitrary M bits in storage areas B0 to B10 having a capacity of (N+1) multiple, e.g., 11 times larger, of the bit number M necessary for data storage. When a data rewriting is instructed, instead of erasing the initial value V10 and writing a new data value in the same memory cell, the unused other memory cell group of M bits is selected to write a new data value V1. By executing this operation for each data rewriting instruction, the writing of new data values V1 to V10 is executed up to 10 times. When reading, by reading a latest value, data rewriting not using erasure is executed. COPYRIGHT: (C)2005,JPO&NCIPI
Abstract translation: 解决问题：为了解决妨碍实现单电源电压驱动的消除电压的难易度的问题。 解决方案：数据的初始值V0存储在存储区域B0至B10的任意M位的存储单元组中，存储区域B0至B10具有位数M（N + 1）倍（例如，11倍）的容量 数据存储必需。 当指示数据重写时，代替擦除初始值V10并将新的数据值写入同一个存储单元中，选择M位的未使用的其他存储单元组来写入新的数据值V1。 通过对每个数据重写指令执行该操作，执行新数据值V1至V10的写入最多10次。 当读取时，通过读取最新值，执行不使用擦除的数据重写。 版权所有（C）2005，JPO＆NCIPI
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公开(公告)号：JP2002050704A
公开(公告)日：2002-02-15
申请号：JP2000233321
申请日：2000-08-01
Applicant: SONY CORP
Inventor： NOMOTO KAZUMASA , KAWASHIMA NORIYUKI , FUJIWARA ICHIRO , TAIRA KENICHI
IPC: H01L21/8247 , H01L21/28 , H01L21/336 , H01L27/00 , H01L27/10 , H01L27/115 , H01L27/12 , H01L29/786 , H01L29/788 , H01L29/792
Abstract: PROBLEM TO BE SOLVED: To provide a memory element capable of correctly read out data, and to provide a manufacturing method of the same and an integrated circuit. SOLUTION: A first control electrode 11 is arranged, so as to almost counterpose a second control electrode 18 with a conduction region 13 and sandwiching an accumulation region 16. When 'reading out the data', electric potential is applied to the first control electrode 11. When 'reading out the data', a change in potential between the conduction region 13 and the accumulation region 16 is restrained, thereby restraining writing or erasing of unintended information. Thus, written information can be read out accurately.
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公开(公告)号：JP2001237330A
公开(公告)日：2001-08-31
申请号：JP2000180762
申请日：2000-06-12
Applicant: SONY CORP
Inventor： FUJIWARA ICHIRO , KOBAYASHI TOSHIO
IPC: H01L21/8247 , G11C11/40 , G11C16/02 , G11C16/04 , G11C16/10 , H01L21/28 , H01L21/318 , H01L21/336 , H01L21/82 , H01L27/105 , H01L27/115 , H01L27/11568 , H01L29/76 , H01L29/788 , H01L29/792 , H01L31/062
Abstract: PROBLEM TO BE SOLVED: To increase a hot electron(HE) implanting efficiency when a MONOS- type memory cell is written and improve scaling property. SOLUTION: This storage has a channel forming region provided on a substrate surface, first and second impurity regions SBLi, SBLi+1 which sandwich the channel forming region and become a source and a drain during operation, a gate insulating film 10 composed of a plurality of films on the channel forming region, a gate electrode WL on the gate insulating film, and charge storage means (carrier trap) which is formed in a surface opposed to the channel forming region and in the gate insulating film 10 while made discrete in the film thickness direction and implanted with hot carriers excited by an applied electric field during operation. A bottom insulating film 11 in the lowest layer constituting the gate insulating film 10 contains a dielectric film, which makes an energy barrier between the bottom insulating film 11 and the substrate smaller than an energy barrier between silicon dioxide and silicon and exhibits an FN electric conduction characteristic.
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