公开(公告)号：JPH09293934A

公开(公告)日：1997-11-11

申请号：JP12936496

申请日：1996-04-26

Applicant: SONY CORP

Inventor： KIJIMA SATORU ,  NAKAYAMA NORIKAZU ,  ISHIBASHI AKIRA

IPC: H01L33/06 ,  H01L33/10 ,  H01L33/28 ,  H01L33/30 ,  H01L33/38 ,  H01S5/00 ,  H01S3/18 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element having high degree of freedom in the thickness of each layer formed by a II-VI group compound semiconductor and also having improved light emitting efficiency. SOLUTION: The first conductive type clad layer 2 formed by MgZnCdSe, a guide layer 3, an active layer 4, a guide layer 5 and the second conductive type clad layer 6 are laminated successively on an InP substrate 1. The composition of the layers 2 to 6 is determined in such a manner that it is lattice- matched with the substrate 1. A semiconductor layer 7, a superlattice semiconductor layer 8 and a contact layer 9 are laminated successively on the second conductive type clad layer 6. The contact layer 9 is formed by ZnTe, and it is formed in low resistance by adding impurities. A lattice-like electrode 10 is provided on the contact layer 9.

公开(公告)号：JPH07240383A

公开(公告)日：1995-09-12

申请号：JP5517294

申请日：1994-02-28

Applicant: SONY CORP

Inventor： KIJIMA SATORU ,  KAWASUMI TAKAYUKI ,  ASANO TAKEHARU ,  TODA ATSUSHI ,  FUNATO KENJI

IPC: H01L21/205 ,  H01L21/02 ,  H01L21/203 ,  H01S3/23 ,  H01S5/00 ,  H01S3/18

Abstract: PURPOSE:To provide a forming method of a semiconductor thin film composed of a compound semiconductor layer wherein crystal defect is eliminated, optical characteristics are improved, and film thickness is excellently controlled. CONSTITUTION:After an etching stopper layer (GaInP layer 12) is formed on a compound semiconductor substrate (GaAs substrate 11) in a first process, a compound semiconductor layer (ZnSe layer 13) is deposited on the GaInP layer 12 by an MOCVD method or an MBE method. After a first reflecting film 14 is formed on the ZnSe layer 13 in a second process, a substrate 15 is stuck on the first reflecting film 14 side in a third process. After that, in a fourth process, the GaAs substrate 11 and the GaInP layer 12 are selectively eliminated by etching, and the surface of the ZnSe layer 13 is exposed. Further in a fifth process, a second reflecting film 17 is formed on the surface of the ZnSe layer 13.

公开(公告)号：JP2003289047A

公开(公告)日：2003-10-10

申请号：JP2003108074

申请日：2003-04-11

Applicant: Sony Corp ,  ソニー株式会社

Inventor： HINO TOMOKIMI ,  ASANO TAKEHARU ,  ASAZUMA YASUNORI ,  KIJIMA SATORU ,  FUNATO KENJI ,  TOMITANI SHIGETAKA

IPC: H01L21/205 ,  H01L33/06 ,  H01L33/32 ,  H01L33/40 ,  H01S5/042 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a method for growing a mono-crystal nitride system group III-V compound semiconductor with low crystal failure density and high quality, and a semiconductor device manufactured by a growth method and a method for manufacturing the semiconductor device. SOLUTION: At the time of forming a growth mask on a substrate, and selectively growing a nitride system group III-V compound semiconductor on the substrate by using the growth mask, a stripe-shaped multi-layer film at least whose mostsurface is made of nitride, and whose width is 4.8 μm or less is used as the growth mask. The growth mask may be constituted of an oxide film and a nitride film on the oxide film, constituted of a metal film and a nitride film on the metal film, constituted of an oxide film and a film made of nitride and an oxide on the oxide film and a nitride film on the film, and constituted of a first metal film and a second metal film on the first metal film and the nitride film on the second metal film. COPYRIGHT: (C)2004,JPO

Abstract translation: 解决的问题：提供一种生长具有低晶体失效密度和高质量的单晶氮化物系III-V族化合物半导体的方法，以及通过生长方法制造的半导体器件和用于制造 半导体器件。 解决方案：在基板上形成生长掩模时，通过使用生长掩模选择性地在衬底上生长氮化物系III-V族化合物半导体，至少具有最大表面的条形多层膜 由氮化物制成，其宽度为4.8μm以下用作生长掩模。 生长掩模可以由氧化物膜和氮化物膜构成，氧化物膜由金属膜和金属膜上的氮化物膜构成，由氧化物膜和由氧化物构成的膜和氧化物上的氧化物构成 膜和氮化物膜，并且由第一金属膜上的第一金属膜和第二金属膜以及第二金属膜上的氮化物膜构成。 版权所有（C）2004，JPO

公开(公告)号：JP2002335048A

公开(公告)日：2002-11-22

申请号：JP2002045986

申请日：2002-02-22

Applicant: SONY CORP

Inventor： YAMAGUCHI KYOJI ,  KOBAYASHI TAKASHI ,  KOBAYASHI TOSHIMASA ,  KIJIMA SATORU ,  TOMIOKA SATOSHI ,  ANZAI SHINICHI ,  TOJO TAKESHI

IPC: H01S5/223 ,  H01L33/00 ,  H01S5/02 ,  H01S5/042 ,  H01S5/22 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element having a low operating voltage and good stability of the transverse mode. SOLUTION: The semiconductor laser element 10 has a structure composed of first contact layer 14, a first clad layer 16, an active layer 20, a second clad layer 24, a second contact layer 26, and a second electrode 30 laminated one above another. The second clad layer 24 is composed of an upper and lower layers 24A, 24B; the first clad layer 14, the active layer 20 and the lower layer 24A of the second clad layer have mesa structures; the upper layer 24B of the second clad layer and the second contact layer 26 have ridge structures; an insulation layer 40 is formed on a part of the lower layer 24A of the second clad layer corresponding to the top face of the mesa structure, so as to cover at least part of both sides of the upper layer 24B of the second clad layer; and a metal layer 42 having substantially the same width as that of the mesa structure is formed from the top face of the insulation layer 40 to the top face of the second electrode 30.

公开(公告)号：JP2002151418A

公开(公告)日：2002-05-24

申请号：JP2000346418

申请日：2000-11-14

Applicant: SONY CORP

Inventor： TOJO TAKESHI ,  KIJIMA SATORU

IPC: C30B29/38 ,  H01L21/205 ,  H01L21/306 ,  H01L33/32 ,  H01L33/44 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To easily manufacture a nitride-family III-V compound semiconductor substrate having a wide area of low-defect-density regions with a simple process, and to manufacture a high-performance, long-life semiconductor device by using the substrate. SOLUTION: A GaN layer 2 is grown on a c-plane sapphire substrate 1, and a plurality of ridges 2a extending to direction and having a trapezoidal cross section are formed. Then, an SiO2 film 4 is formed on the whole surface by vacuum evaporation. By wet-etching the SiO2 film 4 using a KOH solution, only the SiO2 film of the side-face parts of the ridges 2a are removed. Then, a GaN layer 5 is grown in lateral directions using the SiO2 film 4 as a mask for the growth to manufacture a GaN substrate. By growing nitride-based III-V compound semiconductor layers on this GaN substrate, a semiconductor device such as a semiconductor laser is manufactured. In manufacturing a semiconductor laser having a ridge structure, the ridge is formed in a position between the bisector of the ridge 2a and the bisector of the part between the adjoining ridges 2a where good crystallinity is established in the nitride-based III-V compound semiconductor layers.

公开(公告)号：JP2000031592A

公开(公告)日：2000-01-28

申请号：JP19421298

申请日：1998-07-09

Applicant: SONY CORP

Inventor： SANAKA YUMI ,  OKUYAMA HIROYUKI ,  KIJIMA SATORU

IPC: H01L33/06 ,  H01L33/28 ,  H01L33/36 ,  H01S5/00 ,  H01S5/042 ,  H01S5/30 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element which can reduce an oscillation threshold-value current density in a state that an operating voltage is kept to be low, whose element life and reliability can be enhanced and which uses a II-VI compound semiconductor, and to provide a semiconductor light emitting element whose element life and reliability can be enhanced and which uses a II-VI compound semiconductor by optimizing a structure. SOLUTION: When the effective band gap energy of an active layer 7 is at 2.49 eV or higher in a gain guide-type semiconductor laser of a ZnCdSe/ZnSSe/ZnMgSSe SCH structure, a stripe width is set at 10 to 50 μm or higher, and a resonator length is set at 800 μm or higher. When the effective band gap energy of the active layer 7 is at 2.47 eV or lower, a stripe width is set at 3 to 10 μm or lower, and a resonator width is set at 500 to 1000 μm or lower.

公开(公告)号：JPH10199897A

公开(公告)日：1998-07-31

申请号：JP338997

申请日：1997-01-10

Applicant: SONY CORP

Inventor： OKUYAMA HIROYUKI ,  KIJIMA SATORU

IPC: C30B23/08 ,  C30B29/42 ,  C30B29/48 ,  H01L21/203 ,  H01L21/363 ,  H01L33/06 ,  H01L33/28 ,  H01L33/30 ,  H01S5/00 ,  H01L33/00 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a method of growing a compd. semiconductor layer whereby elements are produced, using a II-VI compd. semiconductor which is superior in reliability and life time. SOLUTION: On a II-VI compd. semiconductor layer, a GaAs layer is grown at a growing temp. of 280 deg.C or less by the MBE method. The growing material uses GaAs and Ga or cracked Ga and As. The II-VI compd. semiconductor layer is grown at a growing temp. of 240 deg.C or less by the MBE method, using a II-VI compd. semiconductor contg. its constituent elements or cracked constituent electric simple substances.

公开(公告)号：JP2003031894A

公开(公告)日：2003-01-31

申请号：JP2001219574

申请日：2001-07-19

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KIJIMA SATORU ,  TOJO TAKESHI ,  HINO TOMOKIMI ,  UCHIDA SHIRO

IPC: H01S5/042 ,  H01S5/16 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser using a nitride semiconductor capable of easily raising the output and to provide a method for manufacturing the same.
SOLUTION: The semiconductor laser comprises a P-type side ohmic electrode 52 brought into ohmic contact with a P-type contact layer 43 in other region except at least one end of a resonator direction A, and a P-type side Schottky electrode 53 brought into Schottky contact with the layer 43 at its end. Thus, at least one end of the direction A is set to a current non-implanting region, a surface area of the electrode 53 is increased, and a contact resistance with the wirings can be decreased. Further, heat generated particularly near resonator end faces 10a, 10b of an active layer 30 can be efficiently radiated. The width of the ends in the resonator direction in which the layer 43 is brought into contact with the electrode 53 is preferred to be 50 μm or less.
COPYRIGHT: (C)2003,JPO

Abstract translation: 要解决的问题：提供使用能够容易地提高输出的氮化物半导体的半导体激光器，并提供其制造方法。 解决方案：半导体激光器包括在除了谐振器方向A的至少一端以外的其它区域中与P型接触层43形成欧姆接触的P型侧欧姆电极52和P型侧肖特基电极53 与其结束时的层43进入肖特基接触。 因此，方向A的至少一端被设定为电流非植入区域，电极53的表面积增加，并且可以减小与布线的接触电阻。 此外，可以有效地辐射特别靠近有源层30的谐振器端面10a，10b附近产生的热量。 层43与电极53接触的谐振器方向的端部的宽度优选为50μm以下。

公开(公告)号：JP2002299763A

公开(公告)日：2002-10-11

申请号：JP2001104686

申请日：2001-04-03

Applicant: SONY CORP

Inventor： UCHIDA SHIRO ,  KIJIMA SATORU

IPC: H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01S5/22

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser element of a ridge waveguide type, which has large θpara and has proper light output/injected current characteristic, i.e., a high kink level up to the high-output region. SOLUTION: The semiconductor laser element of a ridge waveguide type includes a p-contact layer 26 of a stripe-shaped ridge 28 formed on a p-clad layer 24, an insulation film 42 formed as a current path narrowing layer on the clad layer at both side faces of the ridge and on the sides thereof, and a p-side electrode 32 electrically connected to an upper surface of the ridge through a window of the insulating film and extended onto the clad layer at both the side faces of the ridge and on the sides thereof. A spin-on-glass(SOG) film, having absorption coefficient of 2000 cm or more, is formed as the insulation film.

公开(公告)号：JP2002246693A

公开(公告)日：2002-08-30

申请号：JP2001086436

申请日：2001-02-16

Applicant: SONY CORP

Inventor： ASANO TAKEHARU ,  KIJIMA SATORU

IPC: H01L21/205 ,  H01S5/223 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor laser element which can produce a small drive current and a long life simply and conveniently. SOLUTION: A buffer layer 12, an n-side contact layer 13, an n-type clad layer 14, an n-side optical guide layer 15, an active layer 16, a p-side optical guide layer 17, a p-type clad layer 18 and a p-side contact layer 19 are laminated on a substrate 11 in a hydrogen atmosphere. And an upper layer of the p-type clad layer 18 is patterned into a ridge shape. Thereafter, a buried layer 20 is grown on both side surfaces of the ridge in a nitrogen atmosphere. In the formation process, the p-type layers 17 to 19 previously formed can be again activated. Simultaneously, the rate of growth of the buried layer 20 in a transversal direction is fast, so that the likelihood of the thermal deterioration of crystallization of the active layer 16 during the growth can be eliminated.