公开(公告)号：JP2002064247A

公开(公告)日：2002-02-28

申请号：JP2000247661

申请日：2000-08-17

Applicant: SONY CORP

Inventor： ANZAI SHINICHI ,  KIJIMA SATORU ,  ASANO TAKEHARU ,  GOTO OSAMU

IPC: H01S5/22 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser and method of manufacturing the same, which can enlarge an ohmic contact area between a nitride-based III-V compound semiconductor layer and an electrode to reduce contact resistance. SOLUTION: Between a p-type clad layer 18 and a p-side contact layer 19, an insulating layer 21, having an opening 21a at a place which corresponds to current injection region of an active layer 16 is formed. The p-type clad layer 18 has a projecting part 18a, which is salient on the p-side contact layer 19 side in correspondence with the opening 21a of the insulating layer 21. The p-side contact layer 19 consists of a basic growth region 19a formed so as to correspond to the projecting part 18a of the p-type clad layer 18, and a regrowth region 19b, which is grown with the basic growth region 19a and projecting part 18a as a base. The width of the p-side contact layer 19 is enlarged by the regrowth region 19b, which increases the ohmic contact area between the p-side contact layer and the p-side electrode 23, and thereby decreases the contact resistance.

公开(公告)号：JP2000331940A

公开(公告)日：2000-11-30

申请号：JP13990699

申请日：1999-05-20

Applicant: SONY CORP

Inventor： ANZAI SHINICHI

IPC: C23C16/34 ,  C30B29/20 ,  H01L21/203 ,  H01L21/205 ,  H01L33/32 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To prevent the surface of a growth layer near an edge from being higher than that of a growth layer at the central part. SOLUTION: An edge 1a of a crystal growth surface of a sapphire substrate 1 is beveled. The beveling process means rounding or tapering. A GaN(garium nitride) semiconductor laser is manufactured by growing an GaN semiconductor layer which forms a laser structure on the sapphire substrate 1 whose edge 1a is beveled using an MOCVD (organic metal chemical vapor growth) method.

公开(公告)号：JP2010114202A

公开(公告)日：2010-05-20

申请号：JP2008284320

申请日：2008-11-05

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KAWANISHI HIDEKAZU ,  KURAMOTO MASARU ,  ANZAI SHINICHI ,  SHOJI MIWAKO ,  TANIGUCHI MANABU

IPC: H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser element, capable of ensuring both improvement of application efficiency of high-frequency superposition and high end-face destruction resistance properties.
SOLUTION: By providing a pair of resonator end faces 10F and 10R and a wide region 22 in the vicinity thereof to a p-side electrode 21, heat generated in the vicinity of the resonator end faces 10F and 10R is radiated via the wide region 22. In addition, a narrow region 23 in a narrow band shape having a width WB narrower than that of the wide region 22 is formed in a part other than the wide region 22 between the pair of resonator end faces 10F and 10R. As a result, an area of the p-side electrode 21 other than the vicinity of the resonator end faces 10F and 10R becomes small, and the capacitance is reduced. A bonding pad 24 for wire-bonding is provided at a middle position of the pair of resonator end faces 10F and 10R.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种半导体激光元件，能够确保提高高频叠加的应用效率和高端面破坏电阻特性。 解决方案：通过在p侧电极21附近设置一对谐振器端面10F和10R以及宽边22，在谐振器端面10F和10R附近产生的热经由 此外，在一对谐振器端面10F和10R之间的宽范围22以外的部分中，形成宽窄宽窄窄宽窄窄区域窄区域23。 结果，除了谐振器端面10F和10R附近之外的p侧电极21的面积变小，并且电容减小。 用于引线接合的接合焊盘24设置在一对谐振器端面10F和10R的中间位置处。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2003081697A

公开(公告)日：2003-03-19

申请号：JP2001273245

申请日：2001-09-10

Applicant: Sony Corp ,  ソニー株式会社

Inventor： GOTO OSAMU ,  ANZAI SHINICHI ,  NAKAJIMA HIROSHI

IPC: C30B29/38 ,  H01L21/205 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To suppress formation of warpage in a substrate when a nitride-based III-V compound semiconductor layer is grown on the substrate prepared from a substance different from the nitride-based III-V compound semiconductor. SOLUTION: A first nitride-based III-V compound semiconductor layer 3 is grown on a main face of a substrate 1, and striped seed crystals are formed by patterning the layer 3. At this time, in a first area, the seed crystals are periodically formed at a first interval, and in a second area, the seed crystals are formed at a second interval larger than the first interval. Then, a second nitride-based III-V compound semiconductor layer 4 is grown in the lateral direction on the substrate 1 using these seed crystals, and a third nitride-based III-V compound semiconductor layer L for forming an elemental structure is grown on the second nitride-based III-V compound semiconductor layer 4.

Abstract translation: 要解决的问题：当在由不同于氮化物III-V族化合物半导体的物质制备的衬底上生长氮化物基III-V化合物半导体层时，抑制衬底中翘曲的形成。 解决方案：在基板1的主面上生长第一氮化物基III-V化合物半导体层3，通过图案化层3形成条纹晶种。此时，在第一区域中，晶种为 以第一间隔周期性地形成，并且在第二区域中，以比第一间隔大的第二间隔形成晶种。 然后，使用这些晶种在基板1上沿横向生长第二氮化物基III-V化合物半导体层4，并且在第三氮化物基III-V化合物半导体层4上生长用于形成元素结构的第三氮化物基III-V化合物半导体层L 第二氮化物系III-V族化合物半导体层4。

公开(公告)号：JP2002335048A

公开(公告)日：2002-11-22

申请号：JP2002045986

申请日：2002-02-22

Applicant: SONY CORP

Inventor： YAMAGUCHI KYOJI ,  KOBAYASHI TAKASHI ,  KOBAYASHI TOSHIMASA ,  KIJIMA SATORU ,  TOMIOKA SATOSHI ,  ANZAI SHINICHI ,  TOJO TAKESHI

IPC: H01S5/223 ,  H01L33/00 ,  H01S5/02 ,  H01S5/042 ,  H01S5/22 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element having a low operating voltage and good stability of the transverse mode. SOLUTION: The semiconductor laser element 10 has a structure composed of first contact layer 14, a first clad layer 16, an active layer 20, a second clad layer 24, a second contact layer 26, and a second electrode 30 laminated one above another. The second clad layer 24 is composed of an upper and lower layers 24A, 24B; the first clad layer 14, the active layer 20 and the lower layer 24A of the second clad layer have mesa structures; the upper layer 24B of the second clad layer and the second contact layer 26 have ridge structures; an insulation layer 40 is formed on a part of the lower layer 24A of the second clad layer corresponding to the top face of the mesa structure, so as to cover at least part of both sides of the upper layer 24B of the second clad layer; and a metal layer 42 having substantially the same width as that of the mesa structure is formed from the top face of the insulation layer 40 to the top face of the second electrode 30.

公开(公告)号：JP2013171883A

公开(公告)日：2013-09-02

申请号：JP2012033287

申请日：2012-02-17

Applicant: Sony Corp ,  ソニー株式会社

Inventor： ANZAI SHINICHI ,  MOTOBAYASHI HISAYOSHI ,  HONGO KAZUYASU

IPC: H01S5/22 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser and a manufacturing method thereof which are capable of enhancing stress concentration at a groove at cleavage, facilitating cleaving at a target position, preventing a minute dislocation from being propagated to a light-emitting surface, increasing a yield, and reducing the number of processes.SOLUTION: A laser structure has an end surface formed as a cleavage plane. Cleavage assisting grooves are formed to cleave semiconductor layers and a semiconductor substrate across portions of the end surface which are not to be a light emission region or a light incident region. The cleavage assisting grooves include a first pattern groove along a resonator surface, and a second pattern groove crossing the first pattern groove.

Abstract translation: 要解决的问题：为了提供能够提高切割时的槽处的应力集中的半导体激光器及其制造方法，能够在目标位置上切断，防止微小位错传播到发光面，增加 产量，并减少工艺数量。解决方案：激光结构具有形成为解理面的端面。 形成切割辅助槽，以切割不是发光区域或光入射区域的端面的部分的半导体层和半导体衬底。 切割辅助槽包括沿着谐振器表面的第一图案凹槽和与第一图案凹槽交叉的第二图案凹槽。

公开(公告)号：JP2004014943A

公开(公告)日：2004-01-15

申请号：JP2002168945

申请日：2002-06-10

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TOJO TAKESHI ,  YABUKI YOSHIBUMI ,  ANZAI SHINICHI ,  HINO TOMOKIMI ,  GOTO OSAMU ,  FUJIMOTO TSUTOMU ,  MATSUMOTO OSAMU ,  TAKEYA MOTONOBU ,  OFUJI YOSHIO

IPC: H01S5/042 ,  H01S5/22 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40

CPC classification number: B82Y20/00 ,  H01L2224/18 ,  H01L2224/24137 ,  H01L2224/73267 ,  H01S5/02276 ,  H01S5/042 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/34333 ,  H01S5/4031

Abstract: PROBLEM TO BE SOLVED: To provide a multibeam semiconductor laser employing a nitride III-V group compound semiconductor, which is driven independently and whose operation before mounting is readily confirmed. SOLUTION: In the multibeam semiconductor laser, having a nitride III-V group compound semiconductor layer, forming a laser structure on one main surface of a substrate 1, and anode electrodes 23, 24 as well as cathode electrodes 20, 21 formed on the same layer, the anode electrode 23 is formed so as to be laid across the cathode electrode 20 through an insulation film 22 while the anode electrode 24 is formed so as to be laid across the cathode electrode 21 through the insulation film 22. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2003008143A

公开(公告)日：2003-01-10

申请号：JP2001183368

申请日：2001-06-18

Applicant: Sony Corp ,  ソニー株式会社

Inventor： HINO TOMOKIMI ,  GOTO OSAMU ,  YABUKI YOSHIBUMI ,  ANZAI SHINICHI ,  TOJO TAKESHI ,  UCHIDA SHIRO ,  IKEDA MASAO

IPC: H01S5/22 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a multi-beam semiconductor laser device which outputs beams uniform in optical output and is suitably constituted so as to output large high optical power.
SOLUTION: This multi-beam semiconductor laser device is a GaN semiconductor laser device having an SCH structure, where laser stripes 44 are provided on a common sapphire board 42, and laser beams are projected from the stripe projection end faces 44a of the laser stripes provided to a cleavage plane vertical to the laser stripes 44. The laser stripes 44 are each of an air ridge type which is current-constricted by an SiO
2 film, a P-side electrode 46 is provided on each ridge, and the laser stripes 44 are formed on a common mesa 45 provided on the sapphire board 42. An N-side electrode 48 is exposed behind the common mesa 45 as a common counter electrode to the P-side electrodes 46, and provided on a contact layer 50 which extends from the rear end face of the laser stripes 44 in the direction of the laser stripes.
COPYRIGHT: (C)2003,JPO

Abstract translation: 要解决的问题：提供在光输出中输出光束均匀的多光束半导体激光装置，其适当构成为输出大的高光功率。 解决方案：该多光束半导体激光器件是具有SCH结构的GaN半导体激光器件，其中激光条44设置在公共蓝宝石板42上，并且激光束从设置的激光条的条形突起端面44a突出 到与激光条纹44垂直的解理面。激光条44各自是由SiO 2膜电流收缩的空气脊型，在每个脊上设置P侧电极46，激光条44 形成在设置在蓝宝石板42上的公共台面45上.N侧电极48作为公共对置电极露出在共用台面45的后面，与P侧电极46接触，设置在接触层50上， 在激光条纹的方向上的激光条纹44的后端面。

公开(公告)号：JP2003077846A

公开(公告)日：2003-03-14

申请号：JP2001269400

申请日：2001-09-05

Applicant: Sony Corp ,  ソニー株式会社

Inventor： ANZAI SHINICHI

IPC: H01L21/205 ,  H01L33/32 ,  H01L33/44 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a nitride semiconductor device for improving productivity and yields. SOLUTION: In a seed crystal having a direction and a direction vertical to the direction in the surface of a layer, an alignment mark 15A having at least one pattern where an interval D1 in the direction in which the growth speed of a crystal is fast is smaller than an interval D2 of a seed crystal section 15 is formed with the seed crystal section 15. In the direction where the growth speed of the crystal is slow at a portion, where the interval D1 of the alignment mark 15A is larger than the interval D2 at the seed crystal section 15, an interval D3 of the pattern of the alignment mark 15A should be 4 μm or less. The interval of the pattern of the alignment mark 15A is devised, thus inhibiting abnormal growth for obtaining a film growth layer with a flat surface even if the crystal is grown on the alignment mark 15A.

Abstract translation: 要解决的问题：提供一种用于提高生产率和产率的氮化物半导体器件的制造方法。 解决方案：在层的表面中具有与<11-20>方向垂直的<11-20>方向和<1-100>方向的晶种中，具有至少一种图案的对准标记15A，其间隔 晶种部分15形成晶体生长速度快的<11-20>方向的D1，晶种部分15的间隔D2小。在<1-100>方向， 在对准标记15A的间隔D1大于籽晶部15的间隔D2的部分，晶体的生长速度慢，对准标记15A的图案的间隔D3应为4μm以下 。 设计对准标记15A的图案的间隔，因此即使在对准标记15A上生长晶体，也抑制了获得具有平坦表面的膜生长层的异常生长。

公开(公告)号：JP2003069152A

公开(公告)日：2003-03-07

申请号：JP2002168293

申请日：2002-06-10

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TOJO TAKESHI ,  HINO TOMOKIMI ,  ANZAI SHINICHI ,  GOTO OSAMU ,  YABUKI YOSHIBUMI ,  UCHIDA SHIRO ,  IKEDA MASAO

IPC: H01L21/205 ,  H01S5/042 ,  H01S5/22 ,  H01S5/323 ,  H01S5/40

CPC classification number: H01S5/4031 ,  H01S5/0425 ,  H01S5/32341 ,  H01S5/4087

Abstract: PROBLEM TO BE SOLVED: To provide a multibeam semiconductor laser element where the light output of each beam is uniform and alignment is easy.
SOLUTION: The multibeam semiconductor laser element 40 is a GaN-based multibeam semiconductor laser element having four laser stripes 42A to D for emitting laser beams with the same wavelength. Each laser stripe has a p-side common electrode 48 on a mesa 46 formed on a sapphire substrate 44, and has each of active regions 50A to D. Two n-side electrodes 52A and B are provided in a contact layer 54 by the mesa as a common counter electrode opposite to the p-side electrode 48. Distance A between the laser stripes 42A and 42D should be 100 μm or less. Distance B
1 between the laser stripe 42A and the laser side end section of the n-side electrode 52B should be 150 μm or less, and distance B
2 between the laser stripe 42D and the laser side end section of the n-side electrode 52B should be 150 μm or less.
COPYRIGHT: (C)2003,JPO

Abstract translation: 要解决的问题：提供一种多光束半导体激光元件，其中每个光束的光输出均匀并且对准容易。 解决方案：多光束半导体激光元件40是具有四个用于发射具有相同波长的激光束的激光条42A至D的GaN基多光束半导体激光元件。 每个激光条纹在形成在蓝宝石衬底44上的台面46上具有p侧公共电极48，并且具有有源区域50A至D.两个n侧电极52A和B通过台面设置在接触层54中 作为与p侧电极48相对的通用对置电极。激光条42A，42D之间的距离A应为100μm以下。 激光条42A和n侧电极52B的激光侧端部之间的距离B1应为150μm以下，并且激光条42D与n侧电极52B的激光侧端部之间的距离B2应为 150μm以下。