公开(公告)号：MX9600508A

公开(公告)日：1997-04-30

申请号：MX9600508

申请日：1995-04-28

Applicant: SONY CORP

Inventor： ITO SATOSHI ,  IKEDA MASAO ,  OKUYAMA HIROYUKI ,  TSUKAMOTO HIRONORI ,  NAGAI MASAHARU ,  TAMAMURA KOSHI ,  TANIGUCHI SATOSHI

IPC: C23C14/00 ,  C23C14/06 ,  C30B23/02 ,  H01L21/363 ,  H01L21/365 ,  H01L33/00 ,  H01L33/28 ,  H01L21/203

Abstract: Una película de un semiconductor compuesto del grupo II - VI de por lo menos uno de los elementos que pertenecen al grupo II de la tabla periodica, y por lo menos uno de los elementos que pertenecen al grupo VI de la tabla periodica se deposita sobre un substrato. Cuando la película se deposita sobre el substrato, se aplica un plasma de nitrogeno en estado excitado al substrato mientras que se remueven las partículas cargadas del plasma mediante un medio de remocion de partícula cargada. La película depositada del semiconductor compuesto del grupo II - VI adulterado con nitrogeno tiene un porcentaje aumentado de átomos de nitrogeno activados y cristalinidad mejorada.

公开(公告)号：SG183959A1

公开(公告)日：2012-10-30

申请号：SG2012066445

申请日：2011-03-07

Applicant: SONY CORP ,  UNIV KEIO

Inventor： HAKOMORI SHIHO ,  YAMAGUCHI TAKASHI ,  TAMAMURA KOSHI ,  ARAI TSUNENORI ,  ITO ARISA

Abstract: 81DETERMINING APPARATUS AND DETERMINING METHOD Abstract[Abstract][Object] To provide a determining apparatus capable of5 safely determining a contact state of the tip portion of a catheter with respect to a tissue in real time.[Solving Means] A photodynamic therapy apparatus 1 as a determining apparatus is the photodynamic therapy apparatus 1 for irradiating a tissue having absorbed10 photo-sensitive pharmaceutical, the photo-sensitivepharmaceutical absorbing an excitation light and emitting fluorescence, or a tissue absorbing the excitation light and emitting fluorescence, with the excitation light emitted from a tip portion of a laser15 catheter 300, including a connector 210, a light source 110, and a light detection unit 130. The laser catheter 300 is capable of being attached/detached to/from the connector 210. The light source 110 outputs the excitation light to the laser catheter 300 via the20 connector 210. The light detection unit 130 detectsintensity or a spectrum of the fluorescence, the fluorescence being entered from the laser catheter 300 via the connector 210, to determine whether the tip portion of the laser catheter 300 contacts the tissue25 or not.Fig. 3

公开(公告)号：CA2655579C

公开(公告)日：2010-09-28

申请号：CA2655579

申请日：2002-10-03

Applicant: SUMITOMO ELECTRIC INDUSTRIES ,  SONY CORP

Inventor： ASATSUMA TSUNENORI ,  TOMIYA SHIGETAKA ,  TAMAMURA KOSHI ,  TOJO TSUYOSHI ,  GOTO OSAMU ,  MOTOKI KENSAKU

IPC: H01L21/20 ,  C30B25/02 ,  C30B29/38 ,  C30B29/40 ,  H01L21/78 ,  H01L29/20 ,  H01L33/00 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01S5/02 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/40

Abstract: When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III-V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.

公开(公告)号：CA2463169C

公开(公告)日：2009-05-12

申请号：CA2463169

申请日：2002-10-03

Applicant: SUMITOMO ELECTRIC INDUSTRIES ,  SONY CORP

Inventor： MOTOKI KENSAKU ,  ASATSUMA TSUNENORI ,  GOTO OSAMU ,  TOJO TSUYOSHI ,  TOMIYA SHIGETAKA ,  TAMAMURA KOSHI

IPC: H01L21/20 ,  C30B25/02 ,  C30B25/04 ,  C30B29/38 ,  H01L21/205 ,  H01L29/20 ,  H01L33/00 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01S5/02 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/40

Abstract: When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III-V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.

公开(公告)号：SG49976A1

公开(公告)日：1998-06-15

申请号：SG1996010666

申请日：1995-09-08

Applicant: SONY CORP

Inventor： TAMAMURA KOSHI ,  TSUKAMOTO HIRONORI ,  IKEDA MASAO

IPC: C30B23/02 ,  H01L21/203 ,  H01L21/363 ,  H01L33/28 ,  H01S5/00 ,  H01L21/20 ,  H01L21/36

Abstract: A molecular beam epitaxy system having a plurality of chambers which contain at least a first chamber and a second chamber. The first chamber is used to form II-V column compound semiconductor layers not containing Te. The second chamber is used to form II-V column compound semiconductor layers containing at least Te. A semiconductor device having an ohmic characteristics can be fabricated without mixing Te into other layers.

公开(公告)号：EP1441426A4

公开(公告)日：2013-05-22

申请号：EP02772973

申请日：2002-10-03

Applicant: SUMITOMO ELECTRIC INDUSTRIES ,  SONY CORP

Inventor： ASATSUMA TSUNENORI ,  TOMIYA SHIGETAKA ,  TAMAMURA KOSHI ,  TOJO TSUYOSHI ,  GOTO OSAMU ,  MOTOKI K

IPC: B82Y20/00 ,  C30B25/02 ,  C30B29/40 ,  H01L21/02 ,  H01L21/20 ,  H01L21/205 ,  H01L33/00 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01S5/02 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/40

CPC classification number: C30B25/02 ,  B82Y20/00 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02664 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/025 ,  H01L33/32 ,  H01S5/0207 ,  H01S5/0213 ,  H01S5/2036 ,  H01S5/22 ,  H01S5/2201 ,  H01S5/2231 ,  H01S5/32341 ,  H01S5/34333 ,  H01S5/4031 ,  H01S2301/173

Abstract: When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III-V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.

公开(公告)号：EP0714122A4

公开(公告)日：1997-05-28

申请号：EP95917493

申请日：1995-04-28

Applicant: SONY CORP

Inventor： ITO SATOSHI ,  TANIGUCHI SATOSHI ,  IKEDA MASAO ,  OKUYAMA HIROYUKI ,  TSUKAMOTO HIRONORI ,  NAGAI MASAHARU ,  TAMAMURA KOSHI

IPC: C23C14/00 ,  C23C14/06 ,  C30B23/02 ,  H01L21/363 ,  H01L21/365 ,  H01L33/00 ,  H01L33/28

CPC classification number: H01L33/285 ,  C23C14/0026 ,  C23C14/0629 ,  C30B23/02 ,  C30B29/48 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02474 ,  H01L21/02477 ,  H01L21/02551 ,  H01L21/0256 ,  H01L21/02579 ,  H01L21/02631 ,  H01L33/0087

Abstract: A film of a II - VI group compound semiconductor of at least one of elements belonging to the II group of the periodic table and at least one of elements belonging to the VI group of the periodic table is deposited on a substrate. When the film is deposited on the substrate, a plasma of nitrogen in an excited state is applied to the substrate while removing charged particles from said plasma by a charged particle removing means. The deposited film of a nitrogen-doped II - VI group compound semiconductor has an increased percentage of activated nitrogen atoms and improved crystallinity.

公开(公告)号：EP2548614A4

公开(公告)日：2015-05-27

申请号：EP11755844

申请日：2011-03-07

Applicant: SONY CORP ,  UNIV KEIO

Inventor： TAMAMURA KOSHI ,  HAKOMORI SHIHO ,  YAMAGUCHI TAKASHI ,  ARAI TSUNENORI ,  ITO ARISA

IPC: A61N5/06 ,  A61B1/00 ,  A61B5/00 ,  A61B5/0402 ,  A61B19/00

CPC classification number: A61B5/1459 ,  A61B5/0071 ,  A61B5/0084 ,  A61B5/0402 ,  A61N5/0601 ,  A61N5/062 ,  A61N2005/0602

公开(公告)号：EP2381241A4

公开(公告)日：2014-07-23

申请号：EP10731280

申请日：2010-01-07

Applicant: SONY CORP

Inventor： NAKAO ISAMU ,  TAMAMURA KOSHI

IPC: G01N21/64 ,  G02B21/36

CPC classification number: G01N21/6408 ,  G01N21/6456 ,  G02B21/16 ,  G02B21/367

Abstract: A fluorescence life measuring apparatus, a fluorescence life measuring method and a program that can obtain fluorescence life using a simple configuration are proposed. The apparatus moves a stage on which a fluorescent material to be measured is placed, irradiates with excitation light the fluorescent material placed on the stage moved at a constant speed, images afterglow of emitted fluorescence caused by the excitation light, and uses an imaged image to detect the elapsed time from a fluorescence position and afterglow strength at a target afterglow position and calculate the fluorescence life.