公开(公告)号：SG183946A1

公开(公告)日：2012-10-30

申请号：SG2012066239

申请日：2011-03-07

Applicant: SONY CORP ,  UNIV KEIO

Inventor： YAMAGUCHI TAKASHI ,  HAKOMORI SHIHO ,  TAMAMURA KOSHI ,  ARAI TSUNENORI ,  ITO ARISA ,  UCHIYAMA JUN

Abstract: ESTIMATING APPARATUS AND ESTIMATING METHOD Abstract[Abstract][Object] To provide an estimating apparatus and anestimating method capable of estimating process of therapy using a laser the catheter 300 accurately in real time.[Solving Means]A photodynamic therapy apparatus 1 as an estimating apparatus is an apparatus for irradiating atissue having absorbed photo-sensitive pharmaceutical,the photo-sensitive pharmaceutical absorbing an excitation light and emitting fluorescence, with the excitation light emitted from a tip portion of a laser the catheter 300, including a connector 210, a lightsource 110, and a light detection unit 130. The laser the catheter 300 is capable of being attached/detached to/from the connector 210. The light source 110 outputs the excitation light to the laser the catheter 300 via the connector 210. The light detection unit 130 detectsintensity or a spectrum of the fluorescence, the fluorescence being entered from the laser the catheter 300 via the connector 210, to estimate whether the tissue has changed because of reaction between the excitation light emitted from the tip portion of thelaser the catheter 300 and the photo-sensitive pharmaceutical absorbed in the tissue.Fig. 3

公开(公告)号：MY116369A

公开(公告)日：2004-01-31

申请号：MYPI9502693

申请日：1995-09-12

Applicant: SONY CORP

Inventor： TAMAMURA KOSHI ,  TSUKAMOTO HIRONORI ,  IKEDA MASAO

IPC: C30B23/02 ,  C30B29/48 ,  H01L21/203 ,  H01L21/363 ,  H01L33/28 ,  H01S5/00

Abstract: A MOLECULAR BEAM EPITAXY SYSTEM (1) HAVING A PLURALITY OF CHAMBERS WHICH CONTAIN AT LEAST A FIRST CHAMBER (12) AND A SECOND CHAMBER (13). THE FIRST CHAMBER (12) IS USED TO FORM II-VI COLUMN COMPOUND SEMICONDUCTOR LAYERS NOT CONTAINING TE. THE SECOND CHAMBER (13) IS USED TO FORM II-VI COLUMN COMPOUND SEMICONDUCTOR LAYERS CONTAINING AT LEAST TE. A SEMICONDUCTOR DEVICE HAVING AN OHMIC CHARACTERISTICS CAN BE FABRICATED WITHOUT MIXING TE INTO OTHER LAYERS.

公开(公告)号：SG183935A1

公开(公告)日：2012-10-30

申请号：SG2012065967

申请日：2011-03-07

Applicant: SONY CORP ,  UNIV KEIO

Inventor： TAMAMURA KOSHI ,  HAKOMORI SHIHO ,  YAMAGUCHI TAKASHI ,  ARAI TSUNENORI ,  ITO ARISA

Abstract: CALCULATION APPARATUS AND CALCULATION METHODAbstract[Abstract][Object] To provide a calculation apparatus and acalculation method capable of calculatingpharmaceutical concentration in a tissue in real time. [Solving Means] A photodynamic therapy apparatus 1 as a calculation apparatus is an apparatus forirradiating a tissue having absorbed photo-sensitivepharmaceutical, the photo-sensitive pharmaceutical absorbing an excitation light and emitting fluorescence, with the excitation light emitted from a tip portion ofa laser catheter 300, including a connector 210, alight source 110, and a light detection unit 130. The laser catheter 300 is capable of beingattached/detached to/from the connector 210. The light source 110 outputs the excitation light to the laser catheter 300 via the connector 210. The light detectionunit 130 detects intensity of the fluorescence, the fluorescence being entered from the laser catheter 300 via the connector 210, to calculate concentration of the photo-sensitive pharmaceutical in a tissue, the tipportion of the laser catheter 300 contacting the tissue.Fig. 3

公开(公告)号：BR9506254A

公开(公告)日：1996-04-16

申请号：BR9506254

申请日：1995-04-28

Applicant: SONY CORP

Inventor： ITO SATOSHI ,  TANIGUCHI SATOSHI ,  IKEDA MASAO ,  OKUYAMA HIROYUKI ,  TSUKAMOTO HIRONORI ,  NAGAI MASAHARU ,  TAMAMURA KOSHI

IPC: C23C14/00 ,  C23C14/06 ,  C30B23/02 ,  H01L21/363 ,  H01L21/365 ,  H01L33/00 ,  H01L33/28

Abstract: A film of a II - VI group compound semiconductor of at least one of elements belonging to the II group of the periodic table and at least one of elements belonging to the VI group of the periodic table is deposited on a substrate. When the film is deposited on the substrate, a plasma of nitrogen in an excited state is applied to the substrate while removing charged particles from said plasma by a charged particle removing means. The deposited film of a nitrogen-doped II - VI group compound semiconductor has an increased percentage of activated nitrogen atoms and improved crystallinity.

公开(公告)号：CA2463169A1

公开(公告)日：2003-04-24

申请号：CA2463169

申请日：2002-10-03

Applicant: SUMITOMO ELECTRIC INDUSTRIES ,  SONY CORP

Inventor： ASATSUMA TSUNENORI ,  TOMIYA SHIGETAKA ,  TAMAMURA KOSHI ,  GOTO OSAMU ,  MOTOKI KENSAKU ,  TOJO TSUYOSHI

IPC: C30B25/02 ,  H01L21/20 ,  H01L33/00 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01S5/02 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/40 ,  H01S5/343 ,  H01L21/205

Abstract: A method for fabricating a semiconductor light emitting element or a semiconductor element by growing a nitride based III-V compound semiconducto r layer for forming a light emitting element structure or an element structure on a nitride based III-V compound semiconductor substrate where a plurality of second regions having a second mean dislocation density higher than a first mean dislocation density are arranged regularly in a first region of crystal having a first mean dislocation density, wherein an element region is define d on the nitride based III-V compound semiconductor substrate such that the second region is not included substantially or not included in a light emitting region or an active region.

公开(公告)号：SG35013A1

公开(公告)日：1997-02-01

申请号：SG1995001308

申请日：1995-09-08

Applicant: SONY CORP

Inventor： TAMAMURA KOSHI ,  TSUKAMOTO HIRONORI ,  IKEDA MASAO

IPC: H01L21/20 ,  H01L21/36 ,  H01S3/25

公开(公告)号：EP2548615A4

公开(公告)日：2013-08-28

申请号：EP11755845

申请日：2011-03-07

Applicant: SONY CORP ,  UNIV KEIO

Inventor： HAKOMORI SHIHO ,  YAMAGUCHI TAKASHI ,  TAMAMURA KOSHI ,  ARAI TSUNENORI ,  ITO ARISA

IPC: A61N5/06 ,  A61B5/0402 ,  A61B19/00 ,  G01N21/64

CPC classification number: A61B18/24 ,  A61B5/0071 ,  A61B5/0084 ,  A61B5/0402 ,  A61B5/1459 ,  A61B5/6885 ,  A61B5/7285 ,  A61N5/062

公开(公告)号：EP2548616A4

公开(公告)日：2013-08-28

申请号：EP11755846

申请日：2011-03-07

Applicant: SONY CORP ,  UNIV KEIO

Inventor： YAMAGUCHI TAKASHI ,  HAKOMORI SHIHO ,  TAMAMURA KOSHI ,  ARAI TSUNENORI ,  ITO ARISA ,  UCHIYAMA JUN

IPC: A61N5/06 ,  A61B5/00 ,  A61B10/00 ,  A61B18/24 ,  A61B19/00

CPC classification number: A61B5/0071 ,  A61B5/0084 ,  A61B5/0402 ,  A61B5/4848 ,  A61B5/6852 ,  A61B5/6869 ,  A61B18/24 ,  A61B2018/00351 ,  A61N5/0601 ,  A61N5/062 ,  A61N2005/0602 ,  A61N2005/0626

Abstract: [Object] To provide an estimating apparatus and an estimating method capable of estimating process of therapy using a laser the catheter 300 accurately in real time. [Solving Means] A photodynamic therapy apparatus 1 as an estimating apparatus is an apparatus for irradiating a tissue having absorbed photo-sensitive pharmaceutical, the photo-sensitive pharmaceutical absorbing an excitation light and emitting fluorescence, with the excitation light emitted from a tip portion of a laser the catheter 300, including a connector 210, a light source 110, and a light detection unit 130. The laser the catheter 300 is capable of being attached/detached to/from the connector 210. The light source 110 outputs the excitation light to the laser the catheter 300 via the connector 210. The light detection unit 130 detects intensity or a spectrum of the fluorescence, the fluorescence being entered from the laser the catheter 300 via the connector 210, to estimate whether the tissue has changed because of reaction between the excitation light emitted from the tip portion of the laser the catheter 300 and the photo-sensitive pharmaceutical absorbed in the tissue.

公开(公告)号：DE60331042D1

公开(公告)日：2010-03-11

申请号：DE60331042

申请日：2003-10-23

Applicant: SUMITOMO ELECTRIC INDUSTRIES ,  SONY CORP

Inventor： NAKAYAMA MASAHIRO ,  MATSUMOTO NAOKI ,  TAMAMURA KOSHI ,  IKEDA MASAO

IPC: H01L21/302 ,  B24B37/00 ,  C30B29/38 ,  H01L21/20 ,  H01L21/304 ,  H01L21/306

Abstract: Nitride semiconductor wafers which are produced by epitaxially grown nitride films on a foreign undersubstrate in vapor phase have strong inner stress due to misfit between the nitride and the undersubstrate material. A GaN wafer which has made by piling GaN films upon a GaAs undersubstrate in vapor phase and eliminating the GaAs undersubstrate bends upward due to the inner stress owing to the misfit of lattice constants between GaN and GaAs. Ordinary one-surface polishing having the steps of gluing a wafer with a surface on a flat disc, bringing another surface in contact with a lower turntable, pressing the disc, rotating the disc, revolving the turntable and whetting the lower surface, cannot remedy the inherent distortion. The Distortion worsens morphology of epitaxial wafers, lowers yield of via-mask exposure and invites cracks on surfaces. Nitride crystals are rigid but fragile. Chemical/mechanical polishing has been requested in vain. Current GaN wafers have roughened bottom surfaces, which induce contamination of particles and fluctuation of thickness. Circular nitride wafers having a diameter larger than 45mm are made and polished. Gross-polishing polishes the nitride wafers in a pressureless state with pressure less than 60g/cm by lifting up the upper turntable for remedying distortion. Distortion height H at a center is reduced to H≤12 mu m. Minute-polishing is a newly-contrived CMP which polishes the nitride wafers with a liquid including potassium hydroxide, potassium peroxodisulfate and powder, irradiates the potassium peroxodisulfate with ultraviolet rays. The CMP-polished top surface has roughness RMS of 0.1nm≤RMS≤5nm or more favorably 0.1nm≤RMS≤0.5nm. The CMP-polished bottom surface has roughness RMS of 0.1nm≤RMS≤5000nm or more favorably 0.1nm≤RMS≤2nm. TTV is less than 10 mu m.

公开(公告)号：CA2655579A1

公开(公告)日：2003-04-24

申请号：CA2655579

申请日：2002-10-03

Applicant: SONY CORP ,  SUMITOMO ELECTRIC INDUSTRIES

Inventor： GOTO OSAMU ,  ASATSUMA TSUNENORI ,  MOTOKI KENSAKU ,  TOMIYA SHIGETAKA ,  TOJO TSUYOSHI ,  TAMAMURA KOSHI

IPC: H01L21/20 ,  C30B25/02 ,  C30B29/38 ,  C30B29/40 ,  H01L21/78 ,  H01L29/20 ,  H01L33/00 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01S5/02 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S5/40

Abstract: When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III-V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.