公开(公告)号：FR2964048A1

公开(公告)日：2012-03-02

申请号：FR1056863

申请日：2010-08-30

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： MORICEAU HUBERT ,  ARGOUD MAXIME ,  MORALES CHRISTOPHE ,  ZUSSY MARC

IPC: B05D5/00

Abstract: Pour obtenir un film en un premier matériau sur un support en polymère : on colle une première plaque sur une seconde plaque 2, l'une au moins de ces plaques comportant au moins une couche du premier matériau située à proximité de l'interface, on creuse dans la première plaque au moins une cavité 4 dont le fond 5, parallèle à l'interface entre les première et seconde plaques, définit dans la première plaque une zone de fond, on forme une couche de polymère 8 dans cette cavité sur une épaisseur contrôlée à partir de son fond, on élimine la seconde plaque sur au moins la majeure partie de son épaisseur, en sorte de libérer, sous la couche de polymère, un film comportant ladite couche du premier matériau.

公开(公告)号：FR2960340A1

公开(公告)日：2011-11-25

申请号：FR1053987

申请日：2010-05-21

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： FOURNEL FRANK ,  BALLY LAURENT ,  ZUSSY MARC ,  JOURDE DOMINIQUE

IPC: H01L21/00

Abstract: Procédé de réalisation d'un support (100) d'au moins un substrat, comportant au moins la mise en œuvre des étapes suivantes : - réalisation d'un empilement (118) comportant au moins deux substrats (102, 104), chacun des deux substrats comprenant deux faces principales (114) opposées, les deux substrats étant solidarisés l'un à l'autre tels qu'une des faces principales d'un premier des deux substrats soit disposée en regard d'une des faces principales du second des deux substrats et contre un matériau d'arrêt de gravure (120), - gravure, à travers le premier des deux substrats et avec arrêt sur le matériau d'arrêt de gravure, d'au moins un emplacement (122) apte à recevoir un substrat destiné à être supporté par le support.

公开(公告)号：AT482493T

公开(公告)日：2010-10-15

申请号：AT05788665

申请日：2005-07-08

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： LAURENT JEAN-YVES ,  SALOT RAPHAEL ,  MARSACQ DIDIER ,  ZUSSY MARC

IPC: H01M10/04 ,  H01M50/528 ,  H01M4/04 ,  H01M10/052 ,  H01M10/0562 ,  H01M10/0585 ,  H01M10/36

Abstract: A microbattery has a support having a front face, a rear face, first and second current collectors arranged on the front face. A stack including a cathode and an anode separated by an electrolyte is arranged on the current collectors. The anode and cathode respectively contact the first and second current collectors. A protective layer covers the stack. The microbattery has connections in contact with the first and second current collectors, passing through the support from the front face to the rear face. The stack substantially covers of the front face of the support. A method for producing the mircobattery includes etching cavities, in the front face of the support, having a depth that is smaller than the thickness of the support, filing of the cavities with a conducting material and removing a layer of the rear face of the support to uncover the conducting material in the cavities.

公开(公告)号：FR2925978B1

公开(公告)日：2010-01-29

申请号：FR0760437

申请日：2007-12-28

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： ZUSSY MARC ,  DI CIOCCIO LEA ,  MORALES CHRISTOPHE ,  MORICEAU HUBERT

IPC: H01L21/304 ,  B28D5/04 ,  H01L21/461

公开(公告)号：FR2925978A1

公开(公告)日：2009-07-03

申请号：FR0760437

申请日：2007-12-28

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： ZUSSY MARC ,  DI CIOCCIO LEA ,  MORALES CHRISTOPHE ,  MORICEAU HUBERT

IPC: H01L21/304 ,  B28D5/04 ,  H01L21/461

Abstract: L'invention concerne un procédé de séparation d'une structure comprenant une zone fragile délimitant dans cette structure deux sous-structures à séparer,selon lequel on fait avancer au moins une lame plane suivant une direction d'avance dans un plan de séparation correspondant à un plan moyen de la zone fragile, depuis un bord d'entrée de la structure en direction d'un bord de sortie de la structure, en sorte de provoquer une séparation progressive des deux sous-structures,le procédé étant caractérisé en ce qu'on fait varier l'inclinaison de la lame dans le plan de séparation vis-à vis de la direction d'avance.

公开(公告)号：FR2888402B1

公开(公告)日：2007-12-21

申请号：FR0507206

申请日：2005-07-06

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： DI CIOCCIO LEA ,  KOSTRZEWA MAREK ,  ZUSSY MARC

IPC: H01L21/50

Abstract: A method for assembling by molecular bonding two substrates, at least one of which is made of a semiconductor material characterised in that one of substrates, called a first substrate, includes a surface (A), where at least one portion is flat and provided with an initial surface roughness compatible with the molecular bonding. The inventive method consists in depositing a thin oxide or nitride bonding layer, whose thickness ranges from 10 to 20 nm, on at least one portion of the surface flat part of the first substrate for carrying out a molecular bonding without pre-polishing, in saturating the thin bonding layer with hydroxyl groups, in bringing the thin bonding layer saturated with hydroxyl groups in contact with the second substrate (10) surface (B) which is at least locally flat with respect to the flat part of the surface (A) and saturated with hydroxyl groups and in carrying out a hydrophilic molecular bonding between said two substrates.

公开(公告)号：FR2849270A1

公开(公告)日：2004-06-25

申请号：FR0216117

申请日：2002-12-18

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： BALERAS FRANCOIS ,  DELAGUILLAUME FANNY ,  ZUSSY MARC

IPC: H01L21/60 ,  H01L21/768 ,  H01L23/31 ,  H01L23/485 ,  H01L23/525 ,  H01L21/48

Abstract: The manufacture of a wafer level chip scale (WLCS) package for a wafer (22) having at least one chip with input/outlet contacts (73) on the wafer's front face comprises using a mold or complex stencil to make a stress relaxing insulation layer (78) with access cavities for the contacts and raised portions to relax stresses having a stepped configuration to support electrical connections. The manufacture of a wafer level chip scale (WLCS) package for a wafer (22) having at least one chip with input/outlet contacts (73) on the wafer's front face comprises using a mold or complex stencil to make a stress relaxing insulation layer (78) with access cavities for the contacts and raised portions to relax stresses, each raised portion having a stepped configuration to support electrical connections. Electrical conducting tracks (75) are formed on the relaxation layer to connect the input/outlet contacts to the electrical connections, and external contacts (77) are formed on the connectors. Between the last two stages an encapsulation layer (79) can be formed over the relaxation layer while leaving the electrical connections exposed.

公开(公告)号：FR2837981A1

公开(公告)日：2003-10-03

申请号：FR0203909

申请日：2002-03-28

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： ASPAR BERNARD ,  ZUSSY MARC ,  CLERC JEAN FREDERIC

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/20 ,  H01L21/68 ,  H01L21/762 ,  H01L21/302 ,  H01L21/78

Abstract: This invention relates to a method for making a thin layer starting from a wafer comprising a front face with a given relief, and a back face, comprising steps consisting of: a) obtaining a support handle with a face acting as a bonding face; b) preparing the front face of the wafer, this preparation including incomplete planarisation of the front face of the wafer, to obtain a bonding energy E 0 between a first value corresponding to the minimum bonding energy compatible with the later thinning step, and a second value corresponding to the maximum bonding energy compatible with the subsequent desolidarisation operation, the bonding energy E 0 being such that E 0 =alpha.E, where E is the bonding energy that would be obtained if the front face of the wafer was completely planarised, alpha is the ratio between the incompletely planarised area of the front face of the wafer and the area of the front face of the wafer if it were completely planarised; c) solidarising the front face of the wafer on the bonding face of the support handle, by direct bonding; d) thinning the wafer starting from its back face until the thin layer is obtained; e) transferring the thin layer onto a usage support, involving separation from the support handle.

公开(公告)号：FR2819099B1

公开(公告)日：2003-09-26

申请号：FR0017215

申请日：2000-12-28

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： FOURNEL FRANCK ,  MORICEAU HUBERT ,  ZUSSY MARC ,  MAGNEA NOEL

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/18 ,  H01L21/762 ,  H01L21/324

公开(公告)号：FR2819099A1

公开(公告)日：2002-07-05

申请号：FR0017215

申请日：2000-12-28

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： FOURNEL FRANCK ,  MORICEAU HUBERT ,  ZUSSY MARC ,  MAGNEA NOEL

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/18 ,  H01L21/762 ,  H01L21/324

Abstract: The invention concerns a method for producing a stacked structure comprising steps which consists in: providing at least two crystalline parts (3, 4) by cleavage from an initial common structure (1); forming structures (30, 40) from the crystalline parts (3, 4), each structure (30, 40) with a surface to be assembled (8, 9) having a controlled angle of inclination relative to the angle of inclination of the generated surface (8, 9) of the corresponding crystalline part (3, 4); assembling the structures (30, 40) while controlling their relative positions, rotating in the interface plane, relative to the positions of the respective crystalline parts (3, 4) within the initial structure (1) so as to obtain a resulting controlled angle of inclination at the interface between the structures (30, 40). The invention is particularly applicable in microelectronics, optics and optoelectronics.