公开(公告)号：DE69919235T2

公开(公告)日：2005-09-08

申请号：DE69919235

申请日：1999-01-12

Applicant: ST MICROELECTRONICS INC

Inventor： KALNITSKY ALEXANDER ,  KRAMER ALAN ,  FABBRIZIO VITO ,  GOZZINI GIOVANNI ,  GUPTA BHUSAN ,  SABARINI MARCO

IPC: H01G7/00 ,  G01B7/28 ,  G01L9/00 ,  G01P15/08 ,  G01P15/125 ,  H01L21/822 ,  H01L27/04 ,  G01L9/12

Abstract: A variable capacitor in a semiconductor device is described in which the capacitance is varied by the movement of a dielectric material in the space between the plates of the capacitor in response to an external stimulus. A method of making such a variable capacitor is also described in which the capacitor is built in a layered structure with the top layer including a portion of dielectric material extending into the space between the capacitor plates. After formation of the top layer, an intermediate layer is etched away to render the top layer flexible to facilitate movement of the dielectric material in the space between the capacitor plates.