公开(公告)号：JPH11261015A

公开(公告)日：1999-09-24

申请号：JP702699

申请日：1999-01-13

Applicant: ST MICROELECTRONICS INC

Inventor： KALNITSKY ALEXANDER ,  KRAMER ALAN ,  FABBRIZIO VITO ,  GOZZINI GIOVANNI ,  GUPTA BHUSAN ,  SABARINI MARCO

IPC: H01G7/00 ,  G01B7/28 ,  G01L9/00 ,  G01P15/08 ,  G01P15/125 ,  H01L21/822 ,  H01L27/04

Abstract: PROBLEM TO BE SOLVED: To integrate a variable capacitor in a semiconductor device through the use of regular manufacturing technology and substance, by constructing a stacked constitution body having a dielectric membrane which can be moved in fixed plates that are mutually detached and in a space between the plates, namely, in a gap. SOLUTION: A variable capacitor has a flexible membrane 14 and it exists on a lower side containing a first conductor 18 which is parallel to a second conductor 20 and is detached from it. The flexible membrane 14 is dielectric substance and is composed of silicon nitride. The flexible membrane 14 has a peripheral part 32 and the peripheral part 32 is supported by a semiconductor substrate 24 through an intermediate layer. The membrane 14 has a beam 36 which partially extends into a gap 22 between the first and second conductors 18 and 20. The membrane 14 has flexibility and can freely move in the gap 22. The beam 36 extends downward in the gap 22 and it is abutted on the upper face of a nitride layer 30.

公开(公告)号：DE69919235D1

公开(公告)日：2004-09-16

申请号：DE69919235

申请日：1999-01-12

Applicant: ST MICROELECTRONICS INC

Inventor： KALNITSKY ALEXANDER ,  KRAMER ALAN ,  FABBRIZIO VITO ,  GOZZINI GIOVANNI ,  GUPTA BHUSAN ,  SABARINI MARCO

IPC: H01G7/00 ,  G01B7/28 ,  G01L9/00 ,  G01P15/08 ,  G01P15/125 ,  H01L21/822 ,  H01L27/04 ,  G01L9/12

Abstract: A variable capacitor in a semiconductor device is described in which the capacitance is varied by the movement of a dielectric material in the space between the plates of the capacitor in response to an external stimulus. A method of making such a variable capacitor is also described in which the capacitor is built in a layered structure with the top layer including a portion of dielectric material extending into the space between the capacitor plates. After formation of the top layer, an intermediate layer is etched away to render the top layer flexible to facilitate movement of the dielectric material in the space between the capacitor plates.

公开(公告)号：DE69919235T2

公开(公告)日：2005-09-08

申请号：DE69919235

申请日：1999-01-12

Applicant: ST MICROELECTRONICS INC

Inventor： KALNITSKY ALEXANDER ,  KRAMER ALAN ,  FABBRIZIO VITO ,  GOZZINI GIOVANNI ,  GUPTA BHUSAN ,  SABARINI MARCO

IPC: H01G7/00 ,  G01B7/28 ,  G01L9/00 ,  G01P15/08 ,  G01P15/125 ,  H01L21/822 ,  H01L27/04 ,  G01L9/12

Abstract: A variable capacitor in a semiconductor device is described in which the capacitance is varied by the movement of a dielectric material in the space between the plates of the capacitor in response to an external stimulus. A method of making such a variable capacitor is also described in which the capacitor is built in a layered structure with the top layer including a portion of dielectric material extending into the space between the capacitor plates. After formation of the top layer, an intermediate layer is etched away to render the top layer flexible to facilitate movement of the dielectric material in the space between the capacitor plates.