公开(公告)号：FR2800913B1

公开(公告)日：2004-09-03

申请号：FR9914105

申请日：1999-11-10

Applicant: ST MICROELECTRONICS SA

Inventor： SKOTNICKI THOMAS ,  JURCZAK MALGORZATA ,  MALLARDEAU CATHERINE

IPC: H01L21/02 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/92 ,  H01G4/33 ,  H01G4/38

Abstract: The invention concerns a method which consists in forming on a substrate ( 1 ) coated with a dielectric material layer ( 3 ) provided with a window ( 3 a), a stack of successive layers alternately of germanium or SiGe alloy ( 4, 6, 8 ) and polycrystalline silicon ( 5, 7, 9 ); selective partial elimination of the germanium or SiGe alloy layers, to form an tree-like structure; forming a thin layer of dielectric material ( 10 ) on the tree-like structure; and coating the tree-like structure with polycrystalline silicon ( 11 ). The invention is useful for making dynamic random-access memories.

公开(公告)号：FR2802705B1

公开(公告)日：2002-08-09

申请号：FR9915902

申请日：1999-12-16

Applicant: ST MICROELECTRONICS SA

Inventor： SKOTNICKI THOMAS ,  JURCZAK MALGORZATA ,  DUTARTRE DIDIER

IPC: H01L21/20 ,  H01L21/762 ,  H01L29/06 ,  H01L21/3213 ,  B82B1/00 ,  B82B3/00

Abstract: The process for fabricating a network of nanometric lines made of single-crystal silicon on an isolating substrate includes the production of a substrate comprising a silicon body having a lateral isolation defining a central part in the body. A recess is formed in the central part having a bottom wall made of dielectric material, a first pair of opposed parallel sidewalls made of dielectric material, and a second pair of opposed parallel sidewalls. At least one of the opposed parallel sidewalls of the second pair being formed from single-crystal silicon. The method further includes the epitaxial growth in the recess, from the sidewall made of single-crystal silicon of the recess, of an alternating network of parallel lines made of single-crystal SiGe alloy and of single-crystal silicon. Also, the lines made of single-crystal SiGe alloy are etched to form in the recess a network of parallel lines made of single-crystal silicon insulated from each other.

公开(公告)号：FR2801971B1

公开(公告)日：2002-02-15

申请号：FR0003547

申请日：2000-03-20

Applicant: ST MICROELECTRONICS SA

Inventor： JAOUEN HERVE ,  JURCZAK MALGORZATA ,  SKOTNICKI THOMAS

IPC: H01L23/28 ,  G01D5/242 ,  G01L9/00 ,  G01S7/521 ,  G10K9/13 ,  H04R7/00 ,  H04R9/00 ,  H04R19/00 ,  H04R31/00 ,  G01D5/241 ,  H01L43/12

Abstract: A transmitter or receiver includes several transducers formed opposite an aperture in a package. Each transducer includes a deformable semiconductor membrane that is capable of conducting current. The membrane is separated from a substrate zone by a cavity. This allows the membrane to deform due to the effect of an acoustic pressure or of a Lorenz force.