公开(公告)号：FR2918504B1

公开(公告)日：2009-11-27

申请号：FR0756321

申请日：2007-07-06

Applicant: ST MICROELECTRONICS SA

Inventor： PONTAROLLO SERGE ,  BERGER DOMINIQUE

IPC: H01L29/8605 ,  G11C7/06 ,  H01L27/07

公开(公告)号：FR2855683B1

公开(公告)日：2005-08-26

申请号：FR0306344

申请日：2003-05-26

Applicant: ST MICROELECTRONICS SA

Inventor： DULAU LAURENT ,  PONTAROLLO SERGE

IPC: H03K4/00 ,  H03K17/16 ,  H03K17/687 ,  H03K17/0812

Abstract: A device for controlling a voltage-controlled switch, including two circuits respectively for setting to the high level and for setting to the low level a control terminal of the voltage-controlled switch, one at least of the circuits including a power transistor capable of connecting the control terminal to a high, respectively low voltage, a bipolar control transistor having its emitter, respectively its collector, connected to the control terminal of the power transistor, the base of the control transistor being likely to receive a control current and a first diode connected between a first predetermined voltage smaller than the high voltage, and the base of the control transistor.

公开(公告)号：DE69610362D1

公开(公告)日：2000-10-26

申请号：DE69610362

申请日：1996-05-21

Applicant: ST MICROELECTRONICS SA

Inventor： PONTAROLLO SERGE

IPC: H01L27/02 ,  H02H9/04

公开(公告)号：FR2820881B1

公开(公告)日：2004-06-04

申请号：FR0101872

申请日：2001-02-12

Applicant: ST MICROELECTRONICS SA

Inventor： LAVILLE SEBASTIEN ,  PONTAROLLO SERGE

IPC: H01L27/06 ,  H01L27/08 ,  H01L27/088 ,  H01L21/8232 ,  H01L23/58

公开(公告)号：FR2820881A1

公开(公告)日：2002-08-16

申请号：FR0101872

申请日：2001-02-12

Applicant: ST MICROELECTRONICS SA

Inventor： LAVILLE SEBASTIEN ,  PONTAROLLO SERGE

IPC: H01L27/06 ,  H01L27/08 ,  H01L27/088 ,  H01L21/8232 ,  H01L23/58

Abstract: The invention concerns an electronic integrated circuit comprising at least first (19) and second (20) MOS transistors arranged in series, each transistor including a gate and a source shorted together, and a base connected to the earth of the integrated circuit.

公开(公告)号：FR2791198B1

公开(公告)日：2001-06-15

申请号：FR9903239

申请日：1999-03-16

Applicant: ST MICROELECTRONICS SA

Inventor： PONTAROLLO SERGE

IPC: H03K7/08 ,  H03K3/00

公开(公告)号：DE69610362T2

公开(公告)日：2001-05-03

申请号：DE69610362

申请日：1996-05-21

Applicant: ST MICROELECTRONICS SA

Inventor： PONTAROLLO SERGE

IPC: H01L27/02 ,  H02H9/04

公开(公告)号：FR2795557A1

公开(公告)日：2000-12-29

申请号：FR9908240

申请日：1999-06-28

Applicant: ST MICROELECTRONICS SA

Inventor： FOREL CHRISTOPHE ,  LAVILLE SEBASTIEN ,  PONTAROLLO SERGE

IPC: H01L21/329 ,  H01L29/8605 ,  H01L29/86 ,  H01C17/22

Abstract: Procedure in which a first voltage is applied to the gate of an MOS transistor, a pre-polarization voltage is applied to the substrate to make the base-emitter junction of the inherent bipolar transistor passive and a second voltage is applied to the drain. The voltages are such that a breakdown of the MOS transducer is initiated. The voltages are such that a breakdown of the MOS transducer by an avalanche between the drain and the substrate, or breakdown between drain and substrate and or a short circuit between the drain and the source is initiated. An Independent claim is made for a device for use with the above procedure.