Patent search ap:("ST MICROELECTRONICS SRL") AND inv:"RESTA CLAUDIO" Page 2

11.

发明专利
METODO DI PROGRAMMAZIONE MULTILIVELLO DI CELLE DI MEMORIA A CAMBIAMENTO DI FASE UTILIZZANTE IMPULSI DI RESET ADATTATIVI 未知

公开(公告)号：ITTO20081018A1

公开(公告)日：2010-06-30

申请号：ITTO20081018

申请日：2008-12-30

Applicant: ST MICROELECTRONICS SRL

Inventor： BEDESCHI FERDINANDO , CABRINI ALESSANDRO , DONZE ENZO MICHELE , GASTALDI ROBERTO , RESTA CLAUDIO , TORELLI GUIDO

12.

发明专利
DISPOSITIVO DI MEMORIA A CAMBIAMENTO DI FASE CON SCARICA DI CORRENTI DI PERDITA IN LINEE DI BIT DESELEZIONATE E METODO PER SCARICARE CORRENTI DI PERDITA IN LINEE DI BIT DESELEZIONATE DI UN DISPOSITIVO DI MEMORIA A CAMBIAMENTO DI FASE 未知

公开(公告)号：ITTO20080677A1

公开(公告)日：2010-03-17

申请号：ITTO20080677

申请日：2008-09-16

Applicant: ST MICROELECTRONICS SRL

Inventor： BEDESCHI FERDINANDO , RESTA CLAUDIO

13.

发明专利
未知

公开(公告)号：DE60227534D1

公开(公告)日：2008-08-21

申请号：DE60227534

申请日：2002-11-18

Applicant: ST MICROELECTRONICS SRL , OVONYX INC

Inventor： KHOURI OSAMA , BEDESCHI FERDINANDO , RESTA CLAUDIO

IPC: G11C11/34 , G11C7/04 , G11C16/02

Abstract: A phase change memory includes a temperature sensor having a resistance variable with temperature with the same law as a phase-change storage element. The temperature sensor is formed by a resistor (20) of chalcogenic material furnishing an electrical quantity (V(T), I(T)) that reproduces the relationship between the resistance of a phase change memory cell and temperature; the electrical quantity is processed (21) so as to generate reference quantities as necessary for writing and reading the memory cells. The chalcogenic resistor (20) has the same structure as a memory cell and is programmed with precision, preferably in the reset state.

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