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    System and method for providing mechanical planarization of a sequential build up substrate for an integrated circuit package
    13.
    发明公开
    System and method for providing mechanical planarization of a sequential build up substrate for an integrated circuit package 审中-公开
    在集成电路封装的方法和用于堆叠的层的机械平坦化设备

    公开(公告)号：EP1341231A3

    公开(公告)日：2006-07-19

    申请号：EP03250539.8

    申请日：2003-01-29

    Applicant: STMicroelectronics, Inc.

    Inventor： Chiu, Anthony M. ,  Siegel, Harry Michael

    IPC: H01L21/48

    CPC classification number: H01L21/481 ,  H01L21/4857 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/73265 ,  H05K3/4652 ,  H05K3/4655 ,  H05K2201/0195 ,  H05K2201/09781 ,  H05K2201/09881 ,  H05K2203/0278 ,  H01L2924/00014

    Abstract: A system and method is disclosed for providing mechanical planarization of a sequential build up substrate for an integrated circuit package. A planarization plate is placed in contact with an uneven external surface of a dielectric layer that covers underlying functional circuit elements and filler circuit elements. A heating element in the planarization plate flattens protruding portions of the external surface of the dielectric layer to create a flat external surface on the dielectric layer. After the flat external surface of the dielectric layer has cooled, it is then covered with a metal conductor layer. The method of the present invention increases the number of sequential buildup layers that may be placed on a sequential buildup substrate.

    Abstract translation: 一种系统和方法被游离缺失盘在集成电路封装，用于提供连续的积聚基板的机械平坦化。 平坦化板被放置在接触上的介电层的不平坦的外表面做了下面的功能的电路元件和电路元件填料盖。 在平坦化板的加热元件变平突出的介电层的外部表面的部分，以在介电层上创建一个平坦的外表面。 该介电层的平坦外表面已经冷却之后，将其然后覆盖有金属导体层。 本发明的方法中增加顺序堆积层的数量也可以在连续的堆积基板进行放置。

    Fuel cell device
    14.
    发明公开
    Fuel cell device 有权
    燃料电池装置

    公开(公告)号：EP1646102A3

    公开(公告)日：2006-06-07

    申请号：EP05256167.7

    申请日：2005-10-03

    Applicant: STMicroelectronics, Inc.

    Inventor： Chiu, Anthony M.

    IPC: H01M8/06

    CPC classification number: H01M8/0612 ,  H01M8/04089 ,  H01M8/04201 ,  H01M8/04291 ,  H01M8/0656 ,  H01M8/186 ,  H01M2008/1095 ,  Y02E60/528

    Abstract: A fuel cell device includes a housing containing a fuel processor that generates fuel gas and a fuel cell having electrodes forming an anode and cathode, and an ion exchange electrolyte positioned between the electrodes. The housing can be formed as first and second cylindrically configured outer shell sections that form a battery cell that is configured similar to a commercially available battery cell. A thermal-capillary pump can be operative with the electrodes and an ion exchange electrolyte, and operatively connected to the fuel processor. The electrodes are configured such that heat generated between the electrodes forces water to any cooler edges of the electrodes and is pumped by capillary action back to the fuel processor to supply water for producing hydrogen gas. The electrodes can be formed on a silicon substrate that includes a flow divider with at least one fuel gas input channel that can be controlled by a MEMS valve.

    Integrated optical unit for use with minature optical discs
    17.
    发明公开
    Integrated optical unit for use with minature optical discs 有权
    对于使用“具有小型化的光盘上的集成光学部件

    公开(公告)号：EP1321931A3

    公开(公告)日：2003-10-15

    申请号：EP02258372.8

    申请日：2002-12-04

    Applicant: STMicroelectronics, Inc.

    Inventor： Chiu, Anthony M. ,  Thomas, Danielle A.

    IPC: G11B7/135 ,  G02B6/00 ,  G11B7/12

    CPC classification number: G11B7/1372 ,  G02B6/4214 ,  G02B6/43 ,  G11B7/123

    Abstract: 028 Light from a laser diode is directed by mirrors on angled surfaces of an optical unit through a first lens at an optical disc. Light returns from the disc on a parallel path through a second lens and is directed at a photodetector. A semiconductor device controls the operation of the laser diode and receives signals form the photodetector for processing. The optical unit is formed from one or two glass elements cut from a larger glass wafer or wafers using photolithographic techniques. The mirrors are formed by thin films deposited on angled glass surfaces formed by selective plasma etching of the wafers. At least one mirror is partially reflective and is formed by depositing a thin film of titanium nitride.

    Transfer molding process for an integrated circuit and pre-formed release film for use in this process
    18.
    发明公开
    Transfer molding process for an integrated circuit and pre-formed release film for use in this process 审中-公开
    传递模制工艺用于半导体装置和在这一过程中使用的预成型非粘着层

    公开(公告)号：EP1333480A2

    公开(公告)日：2003-08-06

    申请号：EP03250537.2

    申请日：2003-01-29

    Applicant: STMicroelectronics, Inc.

    Inventor： Siegel, Harry Michael ,  Chiu, Anthony M.

    IPC: H01L21/56

    CPC classification number: H01L21/566 ,  H01L23/3107 ,  H01L2924/0002 ,  Y10T428/31663 ,  H01L2924/00

    Abstract: A system and method is disclosed for using a pre-formed film in a transfer molding process of the type that uses a transfer mold to encapsulate portions of an integrated circuit with a molding compound. A film of compliant material is pre-formed to conform the shape of the film to a mold cavity surface of the transfer mold. The pre-formed film is then placed adjacent to the surfaces of the mold cavity of the transfer mold. The mold cavity is filled with molding compound and the integrated circuit is encapsulated. The preformation of the film allows materials to be used that are not suitable for use with prior art methods.

    Abstract translation: 一种系统和方法，光盘为游离缺失在薄膜的类型的传递模塑过程中使用预先形成的那样使用传递模塑来封装集成电路的部分与模制化合物。 电影顺应材料的预成形的膜的形状符合于转印模具的模腔表面。 预成形膜然后被放置邻近转印模具的模腔的表面上。 模腔填充有模制化合物和所述集成电路被封装。 影片的预成允许使用的材料并没有适用于与现有技术的方法中使用。

    Silver metallization by damascene method
    19.
    发明公开
    Silver metallization by damascene method 有权
    Silbermetallisierung手套Damaszenverfahren

    公开(公告)号：EP0973195A1

    公开(公告)日：2000-01-19

    申请号：EP99304867.7

    申请日：1999-06-22

    Applicant: STMicroelectronics, Inc.

    Inventor： Chan, Tsiu C. ,  Chiu, Anthony M. ,  Smith, Gregory C.

    IPC: H01L21/768 ,  H01L21/288 ,  H01L23/532

    CPC classification number: H01L21/76873 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/53242 ,  H01L23/53252 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Silver interconnects (118) are formed by etching deep grooves (114) into an insulating layer (112) over the contact regions, exposing portions of the contact regions and defining the interconnects. The grooves (114) are etched with a truncated V- or U-shape, wider at the top than at any other vertical location, and have a minimum width of 0.25 µm or less. An optional adhesion layer and a barrier layer are sputtered onto surfaces of the groove, including the sidewalls, followed by sputter deposition of a seed layer. Where aluminum is employed as the seed layer, a zincating process may then be optionally employed to promote adhesion of silver to the seed layer. The groove (114) is then filled with silver (116) by plating in a silver solution, or with silver and copper by plating in a copper solution followed by plating in a silver solution. The filled groove (114) which results does not exhibit voids ordinarily resulting from sputter deposition of metal into such narrow, deep grooves, although seams may be intermittently present in portions of the filled groove where metal plated from the opposing sidewalls did not fuse flawlessly at the point of convergence. Portions of the silver (116) and other layers above the insulating material (112) are then removed by chemical-mechanical polishing, leaving a silver interconnect (118) connected to the exposed portion of the contact region (110) and extending over adjacent insulating regions to another contact region or a bond pad. Silver interconnects (118) thus formed may have smaller cross-sections, and thus a greater density in a given area, than conventional metallic interconnects.

    Abstract translation: 通过在接触区域上将深槽（114）蚀刻成绝缘层（112）形成银互连（118），暴露接触区域的部分并限定互连。 凹槽（114）被蚀刻成截顶的V形或U形，在顶部比在任何其它垂直位置处更宽，并且具有0.25μm或更小的最小宽度。 将可选的粘合层和阻挡层溅射到包括侧壁的凹槽的表面上，然后溅射沉积种子层。 当铝用作种子层时，可以任选地使用锌化工艺以促进银与种子层的粘附。 然后通过在银溶液中镀银，或者通过在铜溶液中电镀银和铜，然后在银溶液中电镀，将银（116）填充到银（116）中。 所形成的填充凹槽（114）通常不会由金属溅射沉积到这种狭窄的深沟槽中而产生空隙，尽管接缝可以间断地存在于填充凹槽的部分中，其中从相对的侧壁电镀的金属没有完美融合 融合点。 然后通过化学机械抛光去除银（116）和绝缘材料（112）上方的其它层的部分，留下连接到接触区域（110）的暴露部分并延伸到相邻绝缘体上的银互连（118） 区域到另一个接触区域或接合焊盘。 如此形成的银互连（118）可以具有比常规金属互连更小的横截面，并且因此在给定区域中具有更大的密度。

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