Silver metallization by damascene method
    10.
    发明公开
    Silver metallization by damascene method 有权
    Silbermetallisierung durch Damaszenverfahren

    公开(公告)号:EP1732113A2

    公开(公告)日:2006-12-13

    申请号:EP06076564.1

    申请日:1999-06-22

    Abstract: A method of forming interconnects in an integrated circuit, comprising: forming a dielectric layer over a substrate; forming a groove for an interconnect in the dielectric layer; forming an aluminium seed layer over the upper surface of the dielectric layer, over sidewalls of the groove, and over a bottom of the groove to a thickness of approximately 200 Å; zincating the substrate to form a zinc coating on the aluminium seed layer; plating the substrate with silver to form a conformal silver layer on an upper surface of the dielectric layer and on sidewalls of the groove, filling an unfilled portion of the groove; and removing portions of the conformal silver layer on the dielectric layer, leaving a silver interconnect within the groove.

    Abstract translation: 一种在集成电路中形成互连的方法,包括:在衬底上形成电介质层; 在所述电介质层中形成用于互连的凹槽(114); 在所述电介质层的上表面上方,在所述凹槽的侧壁上方,并在所述凹槽的底部上方形成厚度约为的铝种子层; 对基材进行锌化以在铝籽晶层上形成锌涂层; 用银镀覆衬底以在电介质层的上表面和槽的侧壁上形成共形银层(116),填充凹槽的未填充部分; 并且去除介电层上的共形银层的部分,在槽内留下银互连。

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