Abstract:
A system and method is disclosed for aligning an integrated circuit die on an integrated circuit substrate. A plurality of deposits of deformable material are placed on the substrate where the integrated circuit die is to be aligned. In one advantageous embodiment a stamping tool is indexed to a first tooling hole and to a second tooling hole in the substrate. The stamping tool imprints the deposits of deformable material to a tolerance of less than one hundred microns with respect to the first and second tooling holes. The imprinted portions of the deposits to form a pocket for receiving the integrated circuit die. This enables the integrated circuit die to be precisely aligned on the substrate in three dimensions.
Abstract:
A system and method is disclosed for improving solder joint reliability in an integrated circuit package. Each terminal of a quad, flat, non-leaded integrated circuit package is formed having portions that define a solder slot in the bottom surface of the terminal. An external surface of the die pad of the integrated circuit package is also formed having portions that define a plurality of solder slots on the periphery of the die pad. When solder is applied to the die pad and to the terminals, the solder that fills the solder slots increases the solder joint reliability of the integrated circuit package.
Abstract:
A system and method is disclosed for providing a redistribution metal layer in an integrated circuit. The redistribution metal layer is formed from the last metal layer in the integrated circuit during manufacture of the integrated circuit before final passivation is applied. The last metal layer provides sites for solder bump pads used in flip chip interconnection. The redistribution metal layer can be (1) a flat layer deposited over the next to last metal layer through an opening in a dielectric layer, or (2) deposited over an array of vias connected to the next to last metal layer. Space between the solder bump pads is deposited with narrower traces for connecting active circuit areas below. A final passivation layer is deposited to ensure product reliability.
Abstract:
A method of forming interconnects in an integrated circuit, comprising: forming a dielectric layer over a substrate; forming a groove for an interconnect in the dielectric layer; forming an aluminium seed layer over the upper surface of the dielectric layer, over sidewalls of the groove, and over a bottom of the groove to a thickness of approximately 200 Å; zincating the substrate to form a zinc coating on the aluminium seed layer; plating the substrate with silver to form a conformal silver layer on an upper surface of the dielectric layer and on sidewalls of the groove, filling an unfilled portion of the groove; and removing portions of the conformal silver layer on the dielectric layer, leaving a silver interconnect within the groove.