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11.发明授权Sectorized electrically erasable and programmable non-volatile memory device with redundancy 失效Sektoriziertes电可擦除和可编程的冗余非易失性存储器设备
公开(公告)号：EP0797145B1
公开(公告)日：2002-06-12
申请号：EP96830144.0
申请日：1996-03-22
Applicant: STMicroelectronics S.r.l.
Inventor： Villa, Corrado , Dallabora, Marco , Tassan Caser, Fabio
IPC: G06F11/20
CPC classification number: G11C29/82
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12.发明授权Reference signal generating method and circuit for differential evaluation of the content of non-volatile memory cells 失效方法和电路，用于产生参考信号以非易失性存储器单元的内容的差分评价
公开(公告)号：EP0676768B1
公开(公告)日：2000-12-27
申请号：EP94830143.7
申请日：1994-03-28
Applicant: STMicroelectronics S.r.l.
Inventor： Campardo, Giovanni , Dallabora, Marco
IPC: G11C16/06
CPC classification number: G11C16/3445 , G11C16/28 , G11C16/344
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13.发明授权Negative charge pump circuit for electrically erasable semiconductor memory devices 失效为电可擦除半导体存储装置的负电荷泵电路
公开(公告)号：EP0772282B1
公开(公告)日：2000-03-15
申请号：EP95830456.0
申请日：1995-10-31
Applicant: STMicroelectronics S.r.l.
Inventor： Tassan Caser, Fabio , Dallabora, Marco , Defendi, Marco
IPC: H02M3/07
CPC classification number: H02M3/073
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公开(公告)号：EP0616332B1
公开(公告)日：1999-06-23
申请号：EP93830109.0
申请日：1993-03-18
Applicant: STMicroelectronics S.r.l.
Inventor： Campardo, Giovanni , Crisenza, Giuseppe , Dallabora, Marco
CPC classification number: G11C16/0416 , G11C16/04 , G11C16/30
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