Abstract:
The MEMS manipulation device (1) has a first and a second manipulation arms (40, 41) carrying respective mutually facing gripping elements (6, 7). The first manipulation arm (40) is formed by a driving arm (2) and by an articulated arm (4) hinged together through an articulation structure (10). The first driving arm (2) comprises a first beam element (20) and a first piezoelectric region (29), on the first beam element. The first articulation structure (10) comprises a first constraint element (31) not deformable in the thickness direction, and a first hinge structure (32), interposed between the first driving arm (2), the first articulated arm (4), and the first constraint element (31).
Abstract:
A micro-electro-mechanic actuator device (1; 85; 95) comprising: a fixed structure (4); and a mobile structure (2), which includes a first deformable band (47c) and a further second deformable band (47a) and a further third deformable band (47b), which extend on opposite sides of the first deformable band, each carrying a piezoelectric actuator (50i-50j). In a working condition, in which the second and third piezoelectrics are biased by a working voltage, the second and third deformable bands (47a, 47b) are subjected to a negative bending, while the first deformable band (47c) is subjected to a positive bending. There are thus generated two translations that add together, causing a displacement of the first deformable band greater than the one that may be obtained by a single membrane of equal base area.
Abstract:
MEMS device (21; 61; 91; 101) including: a semiconductor support body (22) having a first cavity (24); a membrane (26; 56; 106) including a peripheral portion, fixed to the support body (22), and a suspended portion; a first deformable structure (45; 68; 98) at a distance from a central part of the suspended portion of the membrane (26; 56; 106); a second deformable structure (44; 66; 96) laterally offset relative to the first deformable structure (45; 68; 98) towards the peripheral portion of the membrane (26; 56; 106); and a projecting region (40) fixed under the membrane (26; 56; 106); and wherein the second deformable structure (44; 66; 96) is deformable so as to translate the central part of the suspended portion of the membrane (26; 56; 106) along a first direction; and wherein the first deformable structure (45; 68; 98) is deformable so as to translate the central part of the suspended portion of the membrane (26; 56; 106) along a second direction.
Abstract:
A MEMS device comprising a fixed structure (22) and a suspended structure (26) including an internal structure (29; 109) and a first arm (B1) and a second arm (B2), each of which has a respective first end and a respective second end, the first ends being fixed to the fixed structure and being angularly arranged at a distance apart, the second ends being fixed to the internal structure, being angularly arranged at a distance apart and being arranged angularly in a same direction of rotation with respect to the corresponding first ends. The MEMS device further includes a number of piezoelectric actuators (50, 52, 54, 56), each of which can be driven so as to cause deformation of a corresponding arm, thus causing a rotation of the internal structure. In resting conditions, each of the first and second arms has a respective elongated portion (30, 32) with a respective concavity. The internal structure extends in part within the concavities of the elongated portions of the first and second arms.
Abstract:
A micromechanical device (50) having an tiltable structure (52) rotatable about a first rotation axis (B); a fixed structure (51); and an actuation structure (54) of a piezoelectric type, coupled between the tiltable structure and the fixed structure. The actuation structure (54) is formed by spring elements (55, 56) having a spiral shape. The spring elements (55, 56) are each formed by a plurality of actuation arms (70-73) extending transversely to the first rotation axis (B), each actuation arm carrying a respective piezoelectric band (74, 75) of piezoelectric material. The actuation arms are divided into two sets biased in phase opposition to obtain rotation in opposite directions of the tiltable structure about the first rotation axis (B).
Abstract:
A fluid ejection device (1), comprising: a first semiconductor body (2) including an actuator (3), which is operatively coupled to a chamber (6) for containing the fluid and is configured to cause ejection of the fluid; and a channel (11a) for inlet of the fluid, which extends in a first direction (Z) and has a section having a first dimension (A 1 ); and a second semiconductor body (8), which is coupled to the first semiconductor body (2) and has an ejection nozzle (13) configured to expel the fluid. The second semiconductor body (8) further comprises a first restriction channel (16), which is fluidically coupled to the inlet channel (11a), extends in a second direction (X) orthogonal to the first direction (Z) and has a respective section with a second dimension (A 3 ) smaller than the first dimension (A 1 ) so as to form a restriction between the inlet channel (11a) and the chamber (6).
Abstract:
MEMS device (1) comprising: a signal processing assembly (120); a transduction module (38; 40, 41, 56) comprising a plurality of transducer devices (56); a stiffening structure (113) at least partially surrounding each transducer device (56); one or more coupling pillars (36) for each transducer device (56), extending on the stiffening structure (113) and configured to physically and electrically couple the transduction module (38; 40, 41, 56) to the signal processing assembly (120), to carry control signals of the transducer devices (56). Each conductive coupling element (36) has a section having a shape such as to maximize the overlapping surface with the stiffening structure (113) around the respective transducer device (56). This shape includes hypocycloid with a number of cusps equal to or greater than three; triangular; quadrangular.
Abstract:
An integrated electronic system (1) is provided with a package (2) formed by a support base (4) and a coating region (5) arranged on the support base (4) and having at least a first system die (6), including semiconductor material, coupled to the support base (4) and arranged in the coating region (5). The integrated electronic system also has, within the package (2), a monitoring system (14) configured to determine the onset of defects within the coating region (5), through the emission of acoustic detection waves and the acquisition of corresponding received acoustic waves, whose characteristics are affected by, and therefore are indicative of, the aforementioned defects.
Abstract:
A pressure sensor device (1) has: a pressure detection structure (2) provided in a first die (4) of semiconductor material; a package (20), configured to internally accommodate the pressure detection structure in an impermeable manner, the package having a base structure (21) and a body structure (22), arranged on the base structure, with an access opening (30) in contact with an external environment and internally defining a housing cavity (23), in which the first die (4) is arranged covered with a coating material (32). A piezoelectric transduction structure (35), of a ultrasonic type, is accommodated in the housing cavity, in order to allow detection of foreign material (42) above the coating material and within the package. In particular, the piezoelectric transduction structure (35) is integrated in the first die (4), which comprises a first portion (4'), wherein the pressure detection structure (2) is integrated, and a second portion (4"), separate and distinct from the first portion (4'), wherein the piezoelectric transduction structure (35) is integrated.